AO4801A [FREESCALE]
30V P-Channel MOSFET; 30V P沟道MOSFET
| 型号： | AO4801A |
| 厂家： | 
Freescale |
| 描述： | 30V P-Channel MOSFET |
| 文件： | 总5页 (文件大小：480K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO4801A
30V P-Channel MOSFET
General Description
The AO4801A combines advanced trench MOSFET technology with a low resistance package to provide
extremely low RDS(ON)
.This device is suitable for use as a load switch or in PWM applications.
Features
VDS
-30V
ID (at VGS=-10V)
RDS(ON) (at VGS=-10V)
RDS(ON) (at VGS =-4.5V)
RDS(ON) (at VGS =-2.5V)
-5A
< 48mΩ
< 57mΩ
< 80mΩ
SOIC-8
D2
D1
SOIC-8
Top View
1
2
3
4
8
7
6
5
S2
G2
S1
G1
D2
D2
D1
D1
G1
G2
S1
S2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
Units
Drain-Source Voltage
Gate-Source Voltage
-30
V
V
VGS
±12
TA=25°C
TA=70°C
-5
Continuous Drain
Current
Pulsed Drain Current C
Avalanche Current C
ID
A
-4
IDM
-28
IAS, IAR
EAS, EAR
17
A
Avalanche energy L=0.1mH C
14
mJ
TA=25°C
Power Dissipation B
TA=70°C
2
PD
W
°C
1.3
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
48
Max
62.5
90
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t
≤ 10s
RθJA
Steady-State
Steady-State
74
RθJL
32
40
1/5
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AO4801A
30V P-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=-250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
-30
V
VDS=-30V, VGS=0V
-1
µA
-5
IDSS
Zero Gate Voltage Drain Current
TJ=55°C
VDS=0V, VGS= ±12V
VDS=VGS ID=-250µA
VGS=-4.5V, VDS=-5V
VGS=-10V, ID=-5A
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±100
-1.3
nA
V
VGS(th)
ID(ON)
-0.5
-28
-0.9
A
40
60
48
72
57
80
mΩ
TJ=125°C
RDS(ON)
Static Drain-Source On-Resistance
VGS=-4.5V, ID=-3.5A
45
mΩ
mΩ
S
VGS=-2.5V, ID=-2.5A
60
VDS=-5V, ID=-5A
IS=-1A,VGS=0V
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
18
-0.7
-1
V
Maximum Body-Diode Continuous Current
-2.5
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
515
55
30
4
645
80
780
105
80
pF
pF
pF
Ω
VGS=0V, VDS=-15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
55
VGS=0V, VDS=0V, f=1MHz
7.8
12
SWITCHING PARAMETERS
Qg(4.5V) Total Gate Charge
5
7
9
nC
nC
nC
ns
ns
ns
ns
VGS=-4.5V, VDS=-15V, ID=-5A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
1.5
2.5
6.5
3.5
41
9
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
VGS=-10V, VDS=-15V, RL=3Ω,
RGEN=6Ω
tD(off)
tf
Turn-Off DelayTime
Turn-Off Fall Time
trr
IF=-5A, dI/dt=100A/µs
IF=-5A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
11
3.5
15
5
ns
Qrr
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in
any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz.
Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
2/5
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AO4801A
30V P-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
25
20
15
10
5
20
15
10
5
-10V
VDS=-5V
-4.5V
-3V
125°C
-2.5V
25°C
VGS=-2V
4
0
0
0
0.5
1
1.5
2
2.5
3
0
1
2
3
5
-VGS(Volts)
-VDS (Volts)
Figure 2: Transfer Characteristics (Note E)
Fig 1: On-Region Characteristics (Note E)
90
70
50
30
10
1.8
1.6
1.4
1.2
1
VGS=-4.5V
ID=-3.5A
VGS=-10V
VGS=-2.5V
ID=-5A
VGS=-4.5V
VGS=-2.5V
ID=-2.5A
VGS=-10V
0.8
0
2
4
6
8
10
0
25
50
75
100
125
150
175
-ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
100
80
1.0E+01
1.0E+00
ID=-5A
125°C
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
60
25°C
40
25°C
20
0.0
0.2
0.4
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
1.2
0
2
4
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
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AO4801A
30V P-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1200
1000
800
600
400
200
0
5
4
3
2
1
0
VDS=-15V
ID=-5A
Ciss
Coss
Crss
0
3
6
9
12
0
5
10
15
20
25
30
Q
g (nC)
-VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
10000
1000
100
10
TJ(Max)=150°C
TA=25°C
10µs
RDS(ON)
limited
100µs
1ms
10ms
TJ(Max)=150°C
TA=25°C
1s
0.1
10s
DC
1
0.0
0.00001
0.001
0.1
10
1000
0.1
1
10
100
-VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
θJA=90°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R
0.1
PD
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
1
10
100
1000
4/5
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AO4801A
30V P-Channel MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
-
-10V
-
VDC
Qgs
Qgd
+
Vds
VDC
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
t
td(off)
td(on)
t
r
f
Vgs
-
90%
10%
DUT
Vdd
Vgs
VDC
+
Rg
Vgs
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
EAR= 1/2 LIA2R
L
Vds
Id
Vgs
Vds
-
BVDSS
Vgs
Vdd
VDC
+
Id
Rg
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
-Isd
-IF
Isd
Vgs
dI/dt
-IRM
+
Vdd
VDC
Vdd
-
-Vds
5/5
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