AO4801A [AOS]
Dual P-Channel Enhancement Mode Field Effect Transistor; 双P沟道增强型场效应晶体管
| 型号： | AO4801A |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | Dual P-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总4页 (文件大小：127K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO4801A
Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
VDS (V) = -30V
The AO4801A uses advanced trench technology to
provide excellent RDS(ON) with low gate charge. This
device is suitable for use as a load switch or in PWM
applications. Standard Product AO4801A is Pb-free
(meets ROHS & Sony 259 specifications)
ID =-5.6A (VGS = 10V)
RDS(ON) < 42mΩ (VGS = 10V)
RDS(ON) < 52mΩ (VGS = 4.5V)
RDS(ON) < 75mΩ (VGS = 2.5V)
UIS TESTED!
Rg,Ciss,Coss,Crss Tested
D1
D2
SOIC-8
Top View
1
2
3
4
8
7
6
5
S2
G2
S1
G1
D2
D2
D1
D1
G1
G2
S1
S2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
10 Sec
Steady State
Units
VDS
Drain-Source Voltage
-30
V
VGS
Gate-Source Voltage
Continuous Drain
Current AF
Pulsed Drain Current B
Avalanche Current B
±12
TA=25°C
TA=70°C
5.6
4.5
4.2
3.4
IDSM
IDM
A
-30
11
18
IAR
Repetitive avalanche energy L=0.3mH B
EAR
mJ
W
TA=25°C
2.0
1.3
1.1
0.7
PDSM
Power Dissipation
TA=70°C
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Symbol
Typ
48
74
Max
62.5
110
40
Units
°C/W
°C/W
°C/W
A
t ≤ 10s
RθJA
A
Steady-State
Maximum Junction-to-Ambient
C
Steady-State
RθJL
Maximum Junction-to-Lead
35
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4801A
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=-250uA, VGS=0V
VDS=-30V, VGS=0V
-30
V
-1
IDSS
Zero Gate Voltage Drain Current
uA
-5
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS=±12V
±100
-1.3
nA
V
VGS(th)
ID(ON)
V
DS=VGS ID=-250µA
VGS=-4.5V, VDS=-5V
GS=-10V, ID=-5.6A
-0.6
-25
-0.95
A
V
34
48
42
60
52
75
mΩ
TJ=125°C
RDS(ON)
Static Drain-Source On-Resistance
mΩ
mΩ
VGS=-4.5V, ID=-3.5A
GS=-2.5V, ID=-2.5A
41
V
60
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
VDS=-5V, ID=-5.6A
IS=-1A,VGS=0V
14
S
V
A
-0.74
-1
-2
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
933
108
81
1200
pF
pF
pF
Ω
V
GS=0V, VDS=-15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
6
9
SWITCHING PARAMETERS
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
9.3
1.5
3.7
5.2
6.8
42
12.2
nC
nC
nC
ns
ns
ns
ns
VGS=-4.5V, VDS=-15V, ID=-5.6A
VGS=-10V, VDS=-15V, RL=2.7Ω,
RGEN=6Ω
tD(off)
tf
15
trr
IF=-5.6A, dI/dt=100A/µs
IF=-5.6A, dI/dt=100A/µs
21
28
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
14.3
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
A=25°C. The value in any given application depends on the user's specific board design.
T
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
Rev0: Mar. 2007
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4801A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
30
25
20
15
10
5
VDS=-5V
-10V
-4.5V
-3V
6
4
-2.5V
125°C
25°C
2
VGS=-2V
0
0
0
1
2
3
4
5
0
0.5
1
1.5
-VGS(Volts)
2
2.5
3
-VDS (Volts)
Figure 2: Transfer Characteristics
Figure 1: On-Region Characteristics
90
70
50
30
10
1.6
1.4
1.2
1
ID=-3.5A, VGS=-4.5V
ID=-5.6A, VGS=-10V
VGS=-2.5V
VGS=-4.5V
VGS=-2.5V
ID=-2.5A
VGS=-10V
0.8
0
2
4
6
8
10
0
25
50
75
100
125
150
175
-ID (A)
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
100
80
60
40
20
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
ID=-5.6A
125°C
125°C
25°C
25°C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
3
4
5
6
7
8
9
10
-VSD (Volts)
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4801A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1600
1200
800
400
0
5
4
3
2
1
0
VDS=-15V
ID=-5.6A
Ciss
Crss
Coss
5
0
3
6
9
12
0
10
15
20
25
30
-VDS (Volts)
-Qg (nC)
Figure 8: Capacitance Characteristics
Figure 7: Gate-Charge Characteristics
100.0
10.0
1.0
50
40
30
20
10
0
TJ(Max)=150°C
TA=25°C
10µs
RDS(ON)
limited
100µs
1s
1ms
10s
TJ(Max)=150°C
TC=25°C
10ms
0.1s
DC
0.1
0.1
1
10
100
0.0001 0.001 0.01
0.1
1
10
100 1000
VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (NoteE)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=110°C/W
PD
0.1
Ton
T
Single Pulse
0.001
0.01
0.00001
0.0001
0.01
0.1
Pulse Width (s)
1
10
100
1000
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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