AO4800_V1 [AOS]
Plastic Encapsulated Device; 塑料封装的器件
| 型号： | AO4800_V1 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | Plastic Encapsulated Device |
| 文件： | 总5页 (文件大小：76K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOS Semiconductor
Product Reliability Report
AO4800/AO4800L, rev A
Plastic Encapsulated Device
ALPHA & OMEGA Semiconductor, Inc
495 Mercury Drive
Sunnyvale, CA 94085
U.S.
Tel: (408) 830-9742
www.aosmd.com
Jul 14, 2005
1
This AOS product reliability report summarizes the qualification result for AO4800. Accelerated
environmental tests are performed on a specific sample size, and then followed by electrical test
at end point. Review of final electrical test result confirms that AO4800 passes AOS quality and
reliability requirements. The released product will be categorized by the process family and be
monitored on a quarterly basis for continuously improving the product quality.
Table of Contents:
I.
Product Description
II.
Package and Die information
Environmental Stress Test Summary and Result
Reliability Evaluation
III.
IV.
V.
Quality Assurance Information
I. Product Description:
The AO4800 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
The two MOSFETs make a compact and efficient switch and synchronous rectifier combination
for use in buck converters. AO4800L (Green Product) is offered in a lead-free package.
Absolute Maximum Ratings TA=25° C unless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
Gate-Source Voltage
VDS
30
±12
6.9
5.8
40
V
V
VGS
TA=25°C
TA=70°C
Continuous Drain
Current G
A
ID
C
Pulsed Drain Current
IDM
TA=25°C
TA=70°C
2
PD
W
B
Power Dissipation
1.44
Junction and Storage
Temperature Range
TJ, TSTG
-55 to 150
°C
Thermal Characteristics
Parameter
Maximum Junction-to-
Ambient
Maximum Junction-to-
Ambient
Symbol
Typ
48
Max
62.5
110
40
Units
°C/W
°C/W
°C/W
T = 10s
RqJA
Steady-
State
Steady-
State
74
Maximum Junction-to-Lead
RqJL
35
2
II. Die / Package Information:
AO4800
Standard sub-micron
AO4800L (Green Compound)
Standard sub-micron
Process
low voltage N channel process low voltage N channel process
Package Type
Lead Frame
Die Attach
8 leads SOIC
Copper with Solder Plate
Ag epoxy
8 leads SOIC
Copper with Solder Plate
Ag epoxy
Bond wire
Au 2mils
Au 2 mils
Mold Material
Epoxy resin with silica filler
50/50
UL-94 V-0
Ti / Ni / Ag
Up to Level 1 *
Epoxy resin with silica filler
100/0
UL-94 V-0
Ti / Ni / Ag
Up to Level 1*
Filler % (Spherical/Flake)
Flammability Rating
Backside Metallization
Moisture Level
Note * based on info provided by assembler and mold compound supplier
III. Result of Reliability Stress for AO4800 (Standard) & AO4800L (Green)
Test Item
Test Condition
Time
Point
Lot Attribution
Total
Sample
Number
of
size
14410 pcs
Failures
0
Normal: 1hr PCT+3
cycle IR reflow@240℃
(260℃ for Green)
Normal: 81 lots
Green: 23 lots
Solder
Reflow
0hr
Precondition
HTGB
Temp = 150 C,
Vgs=100% of Vgsmax
168 / 500
hrs
Normal: 3 lots
(Note A*)
246 pcs
0
0
77+5 pcs /
lot
1000 hrs
Temp = 150 C, Vds=80% 168 / 500
of Vdsmax
Normal: 3 lots
(Note A*)
246 pcs
HTRB
hrs
77+5 pcs /
lot
1000 hrs
100 hrs
130 +/- 2 C, 85%, 33.3
psi, Vgs = 80% of Vgs
max
Normal: 52 lots
Green:16 lots
3740 pcs
0
0
0
HAST
50+5 pcs /
lot
4950 pcs
(Note B**)
Normal: 70 lots
Green: 20 lots
121 C, 15+/-1 PSIG,
RH=100%
96 hrs
Pressure Pot
50+5 pcs /
lot
5720 pcs
(Note B**)
Normal: 81 lots
Green: 23 lots
-65 to 150 deg C, air to
air, 0.5hr per cycle
250 / 500
cycles
Temperature
Cycle
50+5 pcs /
lot
(Note B**)
3
III. Result of Reliability Stress for AO4800 (Standard) & AO4800L (Green)
Continues
DPA
Internal Vision
Cross-section
X-ray
NA
5
5
5
5
5
5
0
CSAM
NA
5
5
0
0
Room Temp
150°C bake
150°C bake
0hr
250hr
500hr
40
40
40
40 wires
40 wires
40 wires
Bond Integrity
5 sec
0hr
15
10
230°C
150°C
Solderability
Die shear
15 leads
10
0
0
Note A: The HTGB and HTRB reliability data presents total of available AO4800 and AO4800L
burn-in data up to the published date.
Note B: The pressure pot, temperature cycle and HAST reliability data for AO4800L comes from
the AOS generic green compound package qualification data.
IV. Reliability Evaluation
FIT rate (per billion): 11
MTTF = 10377 years
500 hrs of HTGB, 150 deg C accelerated stress testing is equivalent to 15 years of lifetime at 55
deg C operating conditions (by applying the Arrhenius equation with an activation energy of 0.7eV
and 60% of upper confidence level on the failure rate calculation). AOS reliability group also
routinely monitors the product reliability up to 1000 hr at and performs the necessary failure
analysis on the units failed for reliability test(s).
The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in
sample size of the selected product (AO4800). Failure Rate Determination is based on JEDEC
Standard JESD 85. FIT means one failure per billion hours.
Failure Rate = Chi2 x 109 / [2 (N) (H) (Af)]
= 1.83 x 109 / [2 (2´ 164) (500) (258) + 2 (164) (1000) (258)] = 11
MTTF = 109 / FIT = 9.0 x 108hrs = 10377 years
Chi² = Chi Squared Distribution, determined by the number of failures and confidence interval
N = Total Number of units from HTRB and HTGB tests
H = Duration of HTRB/HTGB testing
Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55C)
Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s )]
Acceleration Factor ratio list:
55 deg C
70 deg C
85 deg C
100 deg C
115 deg C
130 deg C
150 deg C
Af
258
87
32
13
5.64
2.59
1
Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16
Tj u =The use junction temperature in degree (Kelvin), K = C+273.16
k = Boltznan’s constant, 8.617164 X 10 E-5V / K
4
V. Quality Assurance Information
Acceptable Quality Level for outgoing inspection: 0.1% for electrical and visual.
Guaranteed Outgoing Defect Rate: < 25 ppm
Quality Sample Plan: conform to Mil-Std-105D
Contacts:
Wei Liu, Engineer of Failure Analysis and Reliability
wliu@aosmd.com
Fred Chang, Manager of Failure Analysis and Reliability
fchang@aosmd.com
Wilson Ma, Senior Director of Quality Assurance
wma@aosmd.com
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