AO4801 [AOS]
Dual P-Channel Enhancement Mode Field Effect Transistor; 双P沟道增强型场效应晶体管
| 型号： | AO4801 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | Dual P-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总4页 (文件大小：109K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO4801
Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO4801 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
load switch or in PWM applications. It may be used in a
common drain arrangement to form a bidirectional blocking
switch. Standard Product AO4801 is Pb-free (meets ROHS &
Sony 259 specifications). AO4801L is a Green Product
ordering option. AO4801 and AO4801L are electrically
identical.
VDS (V) = -30V
ID = -5 A (VGS = -10V)
RDS(ON) < 49mΩ (VGS = -10V)
RDS(ON) < 64mΩ (VGS = -4.5V)
RDS(ON) < 120mΩ (VGS = -2.5V)
D2
D1
S1
1
2
3
4
8
7
6
5
S2
G2
S1
G1
D2
D2
D1
D1
G2
G1
SOIC-8
S2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current A
-30
±12
V
V
VGS
TA=25°C
TA=70°C
-5
ID
-4.2
A
Pulsed Drain Current B
IDM
-30
TA=25°C
TA=70°C
2
PD
W
Power Dissipation A
1.44
-55 to 150
TJ, TSTG
Junction and Storage Temperature Range
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Symbol
Typ
48
74
Max
62.5
110
40
Units
°C/W
°C/W
°C/W
t ≤ 10s
Steady-State
Steady-State
RθJA
RθJL
35
Alpha & Omega Semiconductor, Ltd.
AO4801
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=-250µA, VGS=0V
-30
V
VDS=-24V, VGS=0V
-1
-5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
DS=0V, VGS=±12V
±100
-1.3
nA
V
VGS(th)
ID(ON)
VDS=VGS ID=-250µA
-0.7
-25
-1
V
GS=-4.5V, VDS=-5V
GS=-10V, ID=-5A
A
V
42.5
49
74
mΩ
TJ=125°C
RDS(ON)
Static Drain-Source On-Resistance
mΩ
mΩ
VGS=-4.5V, ID=-4A
GS=-2.5V, ID=-1A
54
80
64
V
120
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
VDS=-5V, ID=-5A
IS=-1A,VGS=0V
7
11
S
V
A
-0.75
-1
-3
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
952
103
77
pF
pF
pF
Ω
VGS=0V, VDS=-15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
5.9
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
9.5
2
nC
nC
nC
ns
ns
ns
ns
VGS=-4.5V, VDS=-15V, ID=-5A
3.1
12
4
VGS=-10V, VDS=-15V, RL=3Ω,
RGEN=6Ω
tD(off)
tf
37
12
21
13
trr
IF=-5A, dI/dt=100A/µs
IF=-5A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C.
The value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating.
Rev 3 : June 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4801
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
25
20
15
10
5
VDS=-5V
-10V
-4.5V
-3V
6
-2.5V
125°C
4
25°C
VGS=-2V
2
0
0
0
1
2
3
4
5
0
0.5
1
1.5
2
2.5
3
-VDS (Volts)
-VGS(Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
120
100
80
1.6
1.4
1.2
1
ID=-5A
VGS=-4.5V
VGS=-10V
VGS=-2.5V
VGS=-4.5V
VGS=-2.5V
ID=-2A
60
40
VGS=-10V
20
0.8
0
2
4
6
8
10
0
25
50
75
100
125
150
175
-ID (A)
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
190
170
150
130
110
90
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
ID=-2A
125°C
125°C
25°C
70
50
25°C
30
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
-VSD (Volts)
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
AO4801
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1400
5
4
3
2
1
0
VDS=-15V
ID=-5A
1200
1000
800
600
400
200
0
Ciss
Coss
Crss
0
2
4
6
8
10
12
0
5
10
15
-VDS (Volts)
20
25
30
-Qg (nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
TJ(Max)=150°C
40
30
20
10
0
TJ(Max)=150°C
TA=25°C
TA=25°C
10µs
RDS(ON)
100µs
limited
1ms
0.1s
10ms
1s
10s
DC
0.1
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
Pulse Width (s)
-VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
1
D=Ton/T
J,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
PD
0.1
Ton
T
Single Pulse
0.001
0.01
0.00001
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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