AO4800C [AOS]
30V Dual N-Channel MOSFET; 30V双N沟道MOSFET
| 型号： | AO4800C |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 30V Dual N-Channel MOSFET |
| 文件： | 总6页 (文件大小：574K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO4800
30V Dual N-Channel MOSFET
General Description
Product Summary
VDS
30V
The AO4800 uses advanced trench technology to provide
excellent RDS(ON) and low gate charge. The two MOSFETs
make a compact and efficient switch and synchronous
rectifier combination for use in buck converters.
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
6.9A
< 27mΩ
< 32mΩ
< 50mΩ
RDS(ON) (at VGS = 4.5V)
RDS(ON) (at VGS = 2.5V)
100% UIS Tested
100% Rg Tested
SOIC-8
D1
D1
Top View
Bottom View
Top View
S2
G2
S1
G1
D2
D2
D1
D1
1
2
3
4
8
7
6
5
G2
G1
S1
S2
Pin1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
30
Units
Drain-Source Voltage
Gate-Source Voltage
V
V
VGS
±12
TA=25°C
TA=70°C
6.9
Continuous Drain
Current
ID
5.8
A
Pulsed Drain Current C
IDM
40
Avalanche Current C
IAS, IAR
EAS, EAR
14
A
Avalanche energy L=0.1mH C
TA=25°C
Power Dissipation B
10
2
mJ
PD
W
°C
TA=70°C
1.3
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Max
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t
≤ 10s
48
74
32
62.5
90
RθJA
Steady-State
Steady-State
RθJL
40
Rev 6: Dec 2011
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Page 1 of 6
AO4800
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
30
V
VDS=30V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
VDS=0V, VGS= ±12V
VDS=VGS ID=250µA
VGS=4.5V, VDS=5V
VGS=10V, ID=6.9A
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
100
1.5
nA
V
VGS(th)
ID(ON)
0.7
25
1.1
A
17.8
28
27
40
32
50
mΩ
TJ=125°C
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V, ID=6A
VGS=2.5V, ID=5A
VDS=5V, ID=5A
IS=1A,VGS=0V
19
mΩ
mΩ
S
24
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
33
0.7
1
V
Maximum Body-Diode Continuous Current
2.5
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
630
75
50
3
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
1.5
4.5
7
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
6
1.3
1.8
3
nC
nC
nC
ns
ns
ns
ns
VGS=4.5V, VDS=15V, ID=6.9A
VGS=10V, VDS=15V, RL=2.2Ω,
RGEN=3Ω
2.5
25
4
tD(off)
tf
trr
IF=5A, dI/dt=100A/µs
IF=5A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
8.5
2.6
ns
Qrr
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 6: Dec 2011
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Page 2 of 6
AO4800
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
15
10V
3V
35
30
25
20
15
10
5
VDS=5V
4.5V
12
9
2.5V
6
25°C
3
125°C
VGS=2V
0
0
0
0.5
1
1.5
2
2.5
3
0
1
2
3
4
5
VGS(Volts)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
Figure 2: Transfer Characteristics (Note E)
30
1.8
1.6
1.4
1.2
1
VGS=4.5V
ID=6A
25
20
15
10
VGS=4.5V
VGS=10V
ID=6.9A
VGS=10V
0.8
0
25
50
75
100
125
150
175
0
5
10
ID (A)
15
20
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
50
40
30
20
10
1.0E+01
ID=6.9A
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
25°C
125°C
25°C
0.0
0.2
0.4
0.6
0.8
1.0
0
2
4
6
8
10
VGS (Volts)
VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Figure 6: Body-Diode Characteristics (Note E)
Rev 6: Dec 2011
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Page 3 of 6
AO4800
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
4
3
2
1
0
1000
VDS=15V
ID=6.9A
800
600
400
200
0
Ciss
Coss
Crss
0
2
4
6
8
0
5
10
15
20
25
30
Qg (nC)
VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
100.0
TA=25°C
10µs
RDS(ON)
limited
TA=100°C
10.0
1.0
TA=150°C
100µs
1ms
10.0
10ms
TA=125°C
0.1
DC
10s
TJ(Max)=150°C
TA=25°C
0.0
1.0
0.01
0.1
1
10
100
1
10
Time in avalanche, tA (µs)
Figure 9: Single Pulse Avalanche capability (Note C)
100
1000
VDS (Volts)
Figure 10: Maximum Forward Biased Safe
Operating Area (Note F)
10000
1000
100
10
TA=25°C
1
0.00001
0.001
0.1
Pulse Width (s)
10
1000
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)
Rev 6: Dec 2011
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Page 4 of 6
AO4800
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
In descending order
D=Ton/T
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
1
0.1
RθJA=90°C/W
PD
0.01
Single Pulse
0.001
Ton
T
0.001
0.00001
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
40
Rev 6: Dec 2011
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Page 5 of 6
AO4800
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
Rev 6: Dec 2011
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Page 6 of 6
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