FPD1000AS [FILTRONIC]
1W PACKAGED POWER PHEMT; PACKAGED 1W功率PHEMT
| 型号： | FPD1000AS |
| 厂家： | 
FILTRONIC COMPOUND SEMICONDUCTORS |
| 描述： | 1W PACKAGED POWER PHEMT |
| 文件： | 总8页 (文件大小：534K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FPD1000AS
1W PACKAGED POWER PHEMT
• PERFORMANCE (1.8 GHz)
♦ 31 dBm Output Power (P1dB
)
♦ 15 dB Power Gain (G1dB
)
♦ 43 dBm Output IP3
♦ -42 dBc WCDMA ACPR at 21 dBm PCH
♦ 10V Operation
♦ 50% Power-Added Efficiency
♦ Evaluation Boards Available
♦ Design Data Available on Website
♦ Suitable for applications to 5 GHz
SEE PACKAGE OUTLINE FOR
MARKING CODE
• DESCRIPTION AND APPLICATIONS
The FPD1000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron
Mobility Transistor (pHEMT), optimized for power applications in L-Band. The surface-mount
package has been optimized for low parasitics.
Typical applications include drivers or output stages in PCS/Cellular base station transmitter
amplifiers, as well as other power applications in WLL/WLAN amplifiers.
• ELECTRICAL SPECIFICATIONS AT 22°C
Parameter
Symbol
Test Conditions
Min
Typ
Max Units
RF SPECIFICATIONS MEASURED AT f = 1.8 GHz USING CW SIGNAL
Power at 1dB Gain Compression
P1dB
G1dB
MSG
PAE
IM3
VDS = 10V; IDS = 200 mA
ΓS and ΓL tuned for Optimum IP3
VDS = 10V; IDS = 200 mA
30
31
15.0
20
dBm
Power Gain at dB Gain Compression
13.5
ΓS and ΓL tuned for Optimum IP3
Maximum Stable Gain
S21/S12
Power-Added Efficiency
at 1dB Gain Compression
3rd-Order Intermodulation Distortion
ΓS and ΓL tuned for Optimum IP3
V
DS = 10 V; IDS = 200mA
dB
%
PIN = 0dBm, 50Ω system
VDS = 10V; IDS = 200 mA
ΓS and ΓL tuned for Optimum IP3
50
V
DS = 10V; IDS = 200 mA
POUT = 19 dBm (single-tone level)
-46
dBc
Saturated Drain-Source Current
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
IDSS
IMAX
GM
IGSO
|VP|
VDS = 1.3 V; VGS = 0 V
VDS = 1.3 V; VGS ≅ +1 V
VDS = 1.3 V; VGS = 0 V
VGS = -3 V
VDS = 1.3 V; IDS = 2.4 mA
IGS = 2.4 mA
480
650
1100
720
20
0.9
8
800
mA
mA
mS
µA
V
50
1.4
0.7
6
20
Gate-Source Breakdown Voltage
Gate-Drain Breakdown Voltage
Thermal Resistivity (channel-to-case)
|VBDGS
|VBDGD
|
|
V
V
IGD = 2.4 mA
See Note on following page
22
25
ΘCC
°C/W
Phone: +1 408 850-5790
Fax: +1 408 850-5766
http:// www.filtronic.co.uk/semis
Revised: 05/26/05
Email: sales@filcsi.com
FPD1000AS
1W PACKAGED POWER PHEMT
• RECOMMENDED OPERATING BIAS CONDITIONS
Drain-Source Voltage:
Quiescent Current:
From 5V to 10V
From 25% IDSS to 55% IDSS
1
• ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain-Source Current
Gate Current
Symbol
Test Conditions
-3V < VGS < +0V
0V < VDS < +8V
Min
Max
12
-3
IDSS
+20/-20
575
175
150
6.0
Units
V
V
mA
mA
mW
ºC
ºC
W
dB
%
VDS
VGS
IDS
IG
PIN
TCH
TSTG
PTOT
Comp.
For VDS > 2V
Forward / Reverse current
Under any acceptable bias state
Under any acceptable bias state
Non-Operating Storage
See De-Rating Note below
Under any bias conditions
2 or more Max. Limits
RF Input Power2
Channel Operating Temperature
Storage Temperature
Total Power Dissipation
-40
Gain Compression
5
80
Simultaneous Combination of Limits3
1TAmbient = 22°C unless otherwise noted
2Max. RF Input Limit must be further limited if input VSWR > 2.5:1
3Users should avoid exceeding 80% of 2 or more Limits simultaneously
Notes:
•
•
Operating conditions that exceed the Absolute Maximum Ratings will result in permanent damage to the device.
Total Power Dissipation defined as: PTOT ≡ (PDC + PIN) – POUT, where:
DC: DC Bias Power
PIN: RF Input Power
OUT: RF Output Power
P
P
•
Total Power Dissipation to be de-rated as follows above 22°C:
PTOT= 3.5 - (0.04W/°C) x TPACK
where TPACK = source tab lead temperature above 22°C
(coefficient of de-rating formula is the Thermal Conductivity)
Example: For a 55°C source lead temperature: PTOT = 6.0 - (0.04 x (55 – 22)) = 4.68W
•
For optimum heatsinking, metal-filled through (Source) via holes should be used directly below the central
metallized ground pad on the bottom of the package.
Note on Thermal Resistivity: The nominal value of 25°C/W is measured with the package mounted on a large
heatsink with thermal compound to ensure adequate (unsoldered) contact. The package temperature is referred to
the Source leads.
•
• HANDLING PRECAUTIONS
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic
Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and
testing. This product has be tested to Class 1A (> 250V but < 500V) using JESD22 A114, Human
Body Model, and to Class A, (< 200V) using JESD22 A115, Machine Model.
Phone: +1 408 850-5790
Fax: +1 408 850-5766
http:// www.filtronic.co.uk/semis
Revised: 05/26/05
Email: sales@filcsi.com
FPD1000AS
1W PACKAGED POWER PHEMT
• BIASING GUIDELINES
ꢀ Active bias circuits provide good performance stabilization over variations of operating
temperature, but require a larger number of components compared to self-bias or dual-biased.
Such circuits should include provisions to ensure that Gate bias is applied before Drain bias,
otherwise the pHEMT may be induced to self-oscillate. Contact your Sales Representative for
additional information.
ꢀ Dual-bias circuits are relatively simple to implement, but will require a regulated negative
voltage supply for depletion-mode devices such as the FPD1000AS.
ꢀ Self-biased circuits employ an RF-bypassed Source resistor to provide the negative Gate-Source
bias voltage, and such circuits provide some temperature stabilization for the device. A nominal
value for circuit development is 3.25 Ω for the recommended 200mA operating point.
ꢀ The recommended 200mA bias point is nominally a Class AB mode. A small amount of RF gain
expansion prior to the onset of compression is normal for this operating point.
• PACKAGE OUTLINE AND RECOMMENDED PC BOARD LAYOUT
(dimensions in millimeters – mm)
PACKAGE MARKING
CODE
Example:
f1ZD
P1F
f = Filtronic
1ZD = Lot / Date Code
P1F = Status, Part Code,
Part Type
All information and specifications subject to change without notice.
Phone: +1 408 850-5790
Fax: +1 408 850-5766
http:// www.filtronic.co.uk/semis
Revised: 05/26/05
Email: sales@filcsi.com
FPD1000AS
1W PACKAGED POWER PHEMT
• TYPICAL RF PERFORMANCE (VDS = 10V IDS = 200mA f = 1800 MHz):
Power Transfer Characteristic
3.50
3.00
2.50
2.00
1.50
1.00
.50
31.00
29.00
27.00
25.00
23.00
21.00
19.00
17.00
15.00
Pout
10.00
Comp Point
.00
-.50
18.00
0.00
2.00
4.00
6.00
8.00
12.00
14.00
16.00
Input Power (dBm)
Drain Efficiency and PAE
70.00%
60.00%
50.00%
40.00%
30.00%
20.00%
10.00%
.00%
70.00%
60.00%
50.00%
40.00%
30.00%
20.00%
10.00%
.00%
PAE
Eff.
0.00
2.00
4.00
6.00
8.00
10.00
12.00
14.00
16.00
18.00
Input Power (dBm)
Phone: +1 408 850-5790
Fax: +1 408 850-5766
http:// www.filtronic.co.uk/semis
Revised: 05/26/05
Email: sales@filcsi.com
FPD1000AS
1W PACKAGED POWER PHEMT
IM Products vs. Input Power
-15.00
-20.00
-25.00
-30.00
-35.00
-40.00
-45.00
-50.00
-55.00
27.00
25.00
23.00
21.00
19.00
17.00
Pout
Im3, dBc
2.00
3.00
4.00
5.00
6.00
7.00
8.00
9.00
10.00
11.00
12.00
Input Power (dBm)
Note: Graph above shows Input and Output power as single carrier or single-tone levels.
FPD1000AS IP3 CONTOURS 1800 MHz
Swp Max
222
48 dBm
46 dBm
44 dBm
42 dBm
40 dBm
NOTE:
IP3 contours generated with PIN = 11dB
back-off from P1dB. Local maxima for best
linearity located at:
ΓL = 40 + j55 Ω and ΓL = 113 + j70 Ω
with ΓS = 15 + j12 Ω
Swp Min
1
Phone: +1 408 850-5790
Fax: +1 408 850-5766
http:// www.filtronic.co.uk/semis
Revised: 05/26/05
Email: sales@filcsi.com
FPD1000AS
1W PACKAGED POWER PHEMT
FPD1000AS POWER CONTOURS 1800 MHz
1.0
Swp Max
215
0.8
0.6
2.0
28 dBm
0.4
29 dBm
3.0
30 dBm
4.0
5.0
0.2
31 dBm
32 dBm
10.0
10.
0
0.2
0.4
0.6
0.8 1.0
2.0
3.0 4.05.0
0
-10.0
-0.2
NOTE:
Power contours measured at constant
input power, level set to meet
nominal P1dB rating at optimum
-0.4
match point. Optimum match:
ΓS = 3 – j2 Ω and ΓL = 25 + j5 Ω
-
0.6
-
0.8
-
Swp Min
1
1.0
FPD1000AS I-V Curves
.800
VGS = 0V
.700
.600
.500
.400
.300
.200
.100
.000
VGS = -0.25V
VGS = -0.5V
VGS = -0.75V
VGS = -1.0V
VGS = -1.25V
6.00 7.00
0.00
1.00
2.00
3.00
4.00
5.00
8.00
Drain-Source Voltage (V)
Phone: +1 408 850-5790
Fax: +1 408 850-5766
http:// www.filtronic.co.uk/semis
Revised: 05/26/05
Email: sales@filcsi.com
FPD1000AS
1W PACKAGED POWER PHEMT
• RF PERFORMANCE OVER FREQUENCY:
FPD1000AS at VDS = 10V and IDS = 200mA
30.0
25.0
20.0
15.0
10.0
5.0
Ga
in
S21
MSG
0.0
0
500
1000
1500
2000
2500
3000
3500
4000
Frequency (MHz)
FPD1000AS WCDMA ACPR 1900 MHz
DOWNLINK Pk/Avg = 9dB 0.01%
40
0
30
20
-10
-20
-30
-40
-50
-60
-70
10
0
-10
-20
-30
-40
-50
-60
Output Power
ACPR (5 MHz)
ACPR (10MHz)
3
4
5
6
7
8
9
10
11
12
13
14
Input Power (dBm)
Phone: +1 408 850-5790
Fax: +1 408 850-5766
http:// www.filtronic.co.uk/semis
Revised: 05/26/05
Email: sales@filcsi.com
FPD1000AS
1W PACKAGED POWER PHEMT
• STANDARD EVALUATION BOARD (1.70-1.85 GHZ):
See Website for complete list of Evaluation Boards
VDD = +10V
VGG ≈ -0.5V
C6
C8
R2
C5
C7
L2
RF
C4
RF
R1
L1
C9
C1
C2
Q1
INPUT
OUTPUT
NOTE: AutoCAD drawing available on Website. (Model EL-BD-000011-006-A)
BILL OF MATERIALS
Designator Manufacturer’s
Description
1
C1
C2
C3
C4
C5
C6
C7
C8
C9
L1
L2
R1
R2
Q1
ATC600S3R9CW250
ATC600S5R6CW250
Capacitor, 3.9 pF, 0603, ATC 600, tol. +0.25pF
Capacitor, 5.6 pF, 0603, ATC 600, tol. +0.25pF
Deleted
Capacitor, 33 pF, 0603, ATC 600, tol. +5%
Capacitor, 33 pF, 0603, ATC 600, tol. +5%
Capacitor, 1 mF, SMD-B, Kemet, tol. +20%
Capacitor, 68 pF, 0603, ATC 600
Capacitor, 1 mF, SMD-B, Kemet, tol. +20%
Capacitor, 2 pF, 0603, ATC 600, tol. +0.1pF
Inductor, 1.1 nH, Coilcraft High Q Surface
Inductor, 1.1 nH, Coilcraft High Q Surface
Resistor, 27 W, 0402, IMS, tol. +5%
Resistor, 12 W, 0603, IMS, tol. +5%
1w Packaged Power pHEMT, Filtronic
PCB, Rogers R04003, 0.012”(0.3mm), 0.5oz. Cu
Carrier
1
ATC600S330JW250
ATC600S330JW250
T491B105M035AS7015
ATC600S680JW250
T491B105M035AS7015
ATC600S2R0BW250
0604HQ-1N1
1
1
1
1
1
1
1
1
1
1
1
1
1
2
2
1
8
0604HQ-1N1
RCI-0402-27R0J
RCI-0603-12R0J
FPD1000AS
PC-SP-000010-006
TF-SP-000012
142-0711-841
AMP-103185-2
Connector, RF, SMA End Launch, Jack Assy,
Connector, DC, 0.100 on center, 0.025 sq. posts,
Center Block for P100 Package
TF-SP-000003
Screw, #0-80
NOTE: 10-12 mil (0.3mm) plated thru vias used; vias under Q1 should be filled with Dupont CB100 conductive via
plugging material in order to achieve optimal heatsinking.
Phone: +1 408 850-5790
Fax: +1 408 850-5766
http:// www.filtronic.co.uk/semis
Revised: 05/26/05
Email: sales@filcsi.com
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