FPD1000AS_1 [FILTRONIC]
1W PACKAGED POWER PHEMT; PACKAGED 1W功率PHEMT型号: | FPD1000AS_1 |
厂家: | FILTRONIC COMPOUND SEMICONDUCTORS |
描述: | 1W PACKAGED POWER PHEMT |
文件: | 总11页 (文件大小:592K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Datasheet v3.0
1W PACKAGED POWER PHEMT
FEATURES:
PACKAGE
•
•
•
•
•
•
•
•
31 dBm Output Power (P1dB) @1.8GHz
15 dB Power Gain (G1dB) @ 1.8GHz
43 dBm Output IP3
-42 dBc WCDMA ACPR at 21 dBm PCH
10V Operation
50% Power-Added Efficiency
Evaluation Boards Available
Suitable for applications to 5 GHz
TYPICAL APPLICATIONS:
•
Drivers or output stages in PCS/Cellular
base station transmitter amplifiers
Power applications in WLL/WLAN and
WiMax amplifiers
GENERAL DESCRIPTION:
The FPD1000AS is a packaged depletion
mode AlGaAs/InGaAs pseudomorphic High
•
Electron
Mobility
Transistor
(pHEMT),
optimized for power applications in L-Band.
The surface-mount package has been
optimized for low parasitics.
ELECTRICAL SPECIFICATIONS:
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
VDS = 10V; IDS = 200 mA
Power at 1dB Gain Compression
P1dB
30
31
dBm
ΓS and ΓL tuned for Optimum IP3
VDS = 10V; IDS = 200 mA
Power Gain at 1dB Gain Compression
G1dB
MSG
PAE
IM3
13.5
15.0
20
ΓS and ΓL tuned for Optimum IP3
VDS = 10 V; IDS = 200mA
Maximum Stable Gain
S21/S12
dB
%
PIN = 0dBm, 50Ω system
VDS = 10V; IDS = 200 mA
Power-Added Efficiency
at 1dB Gain Compression
50
ΓS and ΓL tuned for Optimum IP3
3rd-Order Intermodulation Distortion
VDS = 10V; IDS = 200 mA
-46
POUT = 19 dBm (single-tone level)
dBc
mA
mA
mS
µA
V
ΓS and ΓL tuned for Optimum IP3
Saturated Drain-Source Current
Maximum Drain-Source Current
Transconductance
IDSS
IMAX
VDS = 1.3 V; VGS = 0 V
VDS = 1.3 V; VGS ≅ +1 V
VDS = 1.3 V; VGS = 0 V
VGS = -3 V
480
650
1100
720
20
800
GM
Gate-Source Leakage Current
Pinch-Off Voltage
IGSO
50
|VP|
VDS = 1.3 V; IDS = 2.4 mA
IGS = 2.4 mA
0.7
6
0.9
1.4
Gate-Source Breakdown Voltage
Gate-Drain Breakdown Voltage
Thermal Resistance (channel-to-case)
|VBDGS|
|VBDGD|
ΘCC
V
IGD = 2.4 mA
20
V
See Note on following page
25
°C/W
Note: TAMBIENT = 22°; RF specification measured at f = 1850 MHz using CW signal (except as noted)
1
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Tel: +44 (0) 1325 301111
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Website: www.filtronic.com
Datasheet v3.0
1
ABSOLUTE MAXIMUM RATING :
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Drain-Source Current
Gate Current
SYMBOL
VDS
TEST CONDITIONS
ABSOLUTE MAXIMUM
7
-3V < VGS < -0.5V
12V
VGS
0V < VDS < +8V
For VDS > 2V
-3V
IDS
IDSS
IG
Forward or reverse current
Under any acceptable bias state
Under any acceptable bias state
Non-Operating Storage
See De-Rating Note below
+20/-20mA
27.5dBm
175°C
2
RF Input Power
PIN
Channel Operating Temperature
Storage Temperature
TCH
TSTG
PTOT
-40°C to 150°C
6W
3
Total Power Dissipation
Notes:
1TAmbient = 22°C unless otherwise noted; exceeding any one of these absolute maximum ratings may cause
permanent damage to the device; Users should avoid exceeding 80% of 2 or more Limits simultaneously
2Max. RF Input Limit must be further limited if input VSWR > 2.5:1
3Total Power Dissipation defined as: PTOT ≡ (PDC + PIN) – POUT
,
where PDC: DC Bias Power, PIN: RF Input Power, POUT: RF Output Power
Total Power Dissipation to be de-rated as follows above 22°C:
PTOT= 6 - (0.04W/°C) x TPACK
where TPACK= source tab lead temperature above 22°C
(coefficient of de-rating formula is the Thermal Conductivity)
Example: For a 55°C carrier temperature: PTOT = 6W – (0.04 x (55 – 22)) = 4.68W
5For optimum heatsinking, metal-filled through (Source) via holes should be used directly below the central
metallized ground pad on the bottom of the package
6Thermal Resistivity: The nominal value of 25°C/W is measured with the package mounted on a large heatsink
with thermal compound to ensure adequate (unsoldered) contact. The package temperature is referred to the
Source leads.
7 Operating at absolute maximum VD continuously is not recommended. If operation is considered then IDS must
be reduced in order to keep the part within it's thermal power dissipation limits. Therefore VGS is restricted
to <-0.5V.
BIASING GUIDELINES:
•
Active bias circuits provide good performance stabilization over variations of operating
temperature, but require a larger number of components compared to self-bias or dual-biased.
Such circuits should include provisions to ensure that Gate bias is applied before Drain bias,
otherwise the pHEMT may be induced to self-oscillate. Contact your Sales Representative for
additional information.
•
•
Dual-bias circuits are relatively simple to implement, but will require a regulated negative voltage
supply for depletion-mode devices such as the FPD1000AS.
The recommended 200mA bias point is nominally a Class AB mode. A small amount of RF gain
expansion prior to the onset of compression is normal for this operating point.
RECOMMENDED OPERATING BIAS CONDITIONS:
•
•
Drain-Source Voltage:
Quiescent Current:
From 5V to 10V
From 25% IDSS to 55% IDSS
2
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Tel: +44 (0) 1325 301111
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Website: www.filtronic.com
Datasheet v3.0
TYPICAL MEASURED RF PERFORMANCE:
Note: Measurement Conditions TAMBIENT = 22°C unless otherwise stated (VDS=10V, IDS=200mA, f=1800MHz)
Power Transfer Characteristic
Drain Efficiency and PAE
3.50
3.00
2.50
2.00
1.50
1.00
.50
31.00
29.00
27.00
25.00
23.00
21.00
19.00
17.00
15.00
70.00%
60.00%
50.00%
40.00%
30.00%
20.00%
10.00%
.00%
70.00%
60.00%
50.00%
40.00%
30.00%
20.00%
10.00%
.00%
PAE
Eff.
Pout
Comp Point
.00
-.50
0.00
2.00
4.00
6.00
8.00
10.00
12.00
14.00
16.00
18.00
0.00
2.00
4.00
6.00
8.00
10.00
12.00
14.00
16.00
18.00
Input Power (dBm)
Input Power (dBm)
IMProducts vs. Input Power
FPD1000AS I-V Curves
-15.00
-20.00
-25.00
-30.00
-35.00
-40.00
-45.00
-50.00
-55.00
27.00
25.00
23.00
21.00
19.00
17.00
.800
.700
.600
.500
.400
.300
.200
.100
.000
VGS = 0V
VGS = -0.25V
VGS = -0.5V
Pout
Im3, dBc
VGS = -0.75V
VGS = -1.0V
VGS = -1.25V
6.00 7.00
2.00
3.00
4.00
5.00
6.00
7.00
8.00
9.00
10.00
11.00
12.00
0.00
1.00
2.00
3.00
4.00
5.00
8.00
Drain-Source Voltage (V)
Input Power (dBm)
FPD1000AS IP3 CONTOURS 1800 MHz
FPD1000AS POWER CONTOURS 1800 MHz
Swp Max
1.0
Swp Max
215
0.8
222
0.6
2.0
28 dBm
29 dBm
0.4
3.0
48 dBm
46 dBm
44 dBm
42 dBm
30 dBm
4.0
5.0
0.2
31 dBm
40 dBm
32 dBm
10.0
10.
0
0.2
0.4
0.6
0.8 1.0
2.0
3.0 4.05.0
0
-10.0
-0.2
-5.0
-4.0
-3.0
-0.4
-
-
2.0
0.6
-
0.8
Swp Min
1
-
1.0
Swp Min
1
NOTE:
IP3 contours generated with PIN = 11dB
NOTE:
Power contours measured at constant
input power level set to meet Optimum
P1dB at the output match. Optimum
match:
back-off from P1dB. Local maxima for best
linearity located at:
ΓL = 40 + j55 Ω and ΓL = 113 + j70 Ω
with ΓS = 15 + j12 Ω
ΓS = 3 – j2 Ω and ΓL = 25 + j5 Ω
3
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Tel: +44 (0) 1325 301111
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Website: www.filtronic.com
Datasheet v3.0
TYPICAL MEASURED RF PERFORMANCE:
Note: Measurement Conditions TAMBIENT = 22°C unless otherwise stated (VDS=10V, IDS=200mA)
FPD1000AS at VDS = 10V and IDS = 200mA
FPD1000AS WCDMA ACPR 1900 MHz
DOWNLINK Pk/Avg = 9dB 0.01%
30.0
40
0
30
-10
-20
-30
-40
-50
-60
-70
25.0
20
10
20.0
0
Ga
in
15.0
-10
-20
-30
-40
-50
-60
(dB)
S21
Output Power
ACPR (5 MHz)
ACPR (10MHz)
MSG
10.0
5.0
0.0
3
4
5
6
7
8
9
10
11
12
13
14
0
500
1000
1500
2000
Frequency (MHz)
2500
3000
3500
4000
Input Power (dBm)
AS PACKAGE
O
UTLINE
(dimensions in millimeters – mm)
A
ND
R
ECOMMENDED PC BOARD LAYOUT:
3.8
1.9±0.25
0.35
2 Plcs.
0.35
2 Plcs.
1.3
2 Plcs.
3.2
Epoxy Fillet
All Dimnesions in mm
General Tolerance: .xx ± 0.05 .x ± 0.15
For best positional accuracy in auto pick and place
device should be referenced directly from the leads
4
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Tel: +44 (0) 1325 301111
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Website: www.filtronic.com
Datasheet v3.0
REFERENCE DESIGN AT 1.70 TO 1.85 GHZ:
VGG ≈ -0.5V
VDD = +10V
C6
C8
R2
C7
C5
L2
RF
OUTPUT
RF
INPUT
R1
C4
L1
C9
C1
C2
Q1
ꢀꢂꢃꢃꢄꢅꢆ
NOTE: AutoCAD™ drawing available on request
DESIGNATOR
MANUFACTURER’S PART
ATC600S3R9CW250
ATC600S5R6CW250
ATC600S330JW250
ATC600S330JW250
T491B105M035AS7015
ATC600S680JW250
T491B105M035AS7015
ATC600S2R0BW250
0604HQ-1N1
DESCRIPTION
QUANTITY
C1
C2
C4
C5
C6
C7
C8
C9
L1
Capacitor, 3.9 pF, 0603, ATC 600, tol. +0.25pF
Capacitor, 5.6 pF, 0603, ATC 600, tol. +0.25pF
Capacitor, 33 pF, 0603, ATC 600, tol. +5%
Capacitor, 33 pF, 0603, ATC 600, tol. +5%
Capacitor, 1 mF, SMD-B, Kemet, tol. +20%
Capacitor, 68 pF, 0603, ATC 600
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
2
2
1
8
Capacitor, 1 mF, SMD-B, Kemet, tol. +20%
Capacitor, 2 pF, 0603, ATC 600, tol. +0.1pF
Inductor, 1.1 nH, Coilcraft High Q Surface Mount
Inductor, 1.1 nH, Coilcraft High Q Surface Mount
Resistor, 27 W, 0402, IMS, tol. +5%
L2
0604HQ-1N1
R1
R2
Q1
RCI-0402-27R0J
RCI-0603-12R0J
FPD1000AS
Resistor, 12 W, 0603, IMS, tol. +5%
1w Packaged Power pHEMT, Filtronic
PCB, Rogers R04003, 0.012”(0.3mm), 0.5oz.
PC-SP-000010-006
TF-SP-000012
Carrier
Connector, RF, SMA End Launch, Jack Assy,
Connector, DC, 0.100 on center, 0.025 sq.
142-0711-841
AMP-103185-2
TF-SP-000003
Center Block for P100 Package
Screw, #0-80
NOTE: 10-12 mil (0.3mm) plated thru vias used; vias under Q1 should be filled with Dupont CB100 conductive
via plugging material in order to achieve optimal heatsinking.
5
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Tel: +44 (0) 1325 301111
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Website: www.filtronic.com
Datasheet v3.0
REFERENCE DESIGN AT 3.4 TO 3.5 GHZ:
PARAMETER
UNIT
PERFORMANCE
Frequency
Gain
GHz
dB
3.4 to 3.5
12
P1dB
dBm
dBc
31
IM3@19dBm Pout SCL
-46dBc
S11
S22
Vd
dB
dB
V
-5
-19
10
Vg
V
-0.6 to -0.9
200
Id
mA
SCHEMATIC:
-Vg
Vd
1.0uF
1.0uF
100pF
FPD1000AS EVAL Board
10pF
10pF
Schematic
20 Ohm
Z16
Z15
Z10
Z9
Z14
Z1
Z5
Z8
15pF
15pF
2
1
3
4
2
4
2
4
2
4
1
3
1
3
1
3
RF OUT
(50 Ohm)
Z12
Z17
Z18
Z13
Z14
Z19
RF IN
(50 Ohm)
Z2
Z7
Z4
Z11
Z3
Z6
Z1
Z5
Z8
Desc.
Z1
Z2
Value
0.040" x 0.930" Microstrip
W1=0.020" W2=0.040" W3=0.020" W4=0.040" Microstrip Cross
0.020" x 0.140" Microstrip
Z3
W1=0.020" W2=0.080" W3=0.020" W4=0.080" Microstrip Cross
0.080" x 0.100" Microstrip
Z4
Z5
0.020" x 0.350" Microstrip
Z6
W1=0.020" W2=0.060" W3=0.020" W4=0.060" Microstrip Cross
0.060" x 0.320" Microstrip
Z7
Z8
0.015" x 0.256" Microstrip
Z9
0.400" x 90° Microstrip Radial Stub
0.040" x 0.040" Microstrip
W1=0.040" W2=0.120" W3=0.040" W4=0.120" Microstrip Cross
0.120" x 0.220" Microstrip
Z10, Z16
Z11, Z12
Z13
Z14
0.015" x 0.330" Microstrip
Z15
0.040" x 0.320" Microstrip
Z17
0.150" x 0.140" Microstrip
Z18
0.030" x 0.270" Microstrip
Z19
6
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Tel: +44 (0) 1325 301111
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Website: www.filtronic.com
Datasheet v3.0
BOARD LAYOUT 3.4 TO 3.5 GHZ:
VD
RF IN
EV-SP-000017-002
NOTE: AutoCAD™ drawing available on request
7
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Tel: +44 (0) 1325 301111
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Website: www.filtronic.com
Datasheet v3.0
S-PARAMETERS:
Note: Biased @ 10V, 200mA
FREQ-GHZ
S11MAG S11ANG S21MAG S21ANG S12MAG S12ANG S22MAG S22ANG
0.50
0.60
0.70
0.80
0.90
1.00
1.10
1.20
1.30
1.40
1.50
1.60
1.70
1.80
1.90
2.00
2.10
2.20
2.30
2.40
2.50
2.60
2.70
2.80
2.90
3.00
3.10
3.20
3.30
3.40
3.50
3.60
3.70
3.80
3.90
4.00
4.10
4.20
4.30
4.40
4.50
4.60
4.70
4.80
4.90
0.88
0.87
0.87
0.87
0.86
0.86
0.86
0.86
0.86
0.86
0.86
0.86
0.86
0.86
0.86
0.85
0.85
0.85
0.85
0.85
0.85
0.85
0.85
0.85
0.85
0.85
0.85
0.85
0.85
0.85
0.85
0.85
0.85
0.84
0.84
0.84
0.83
0.83
0.83
0.82
0.82
0.82
0.82
0.82
0.82
-128.80
-138.81
-146.73
-153.30
-158.82
-163.57
-167.75
-171.53
-174.94
-178.08
178.98
176.28
173.71
171.32
168.97
166.76
164.62
162.52
160.59
158.68
156.79
154.99
153.27
151.54
149.70
148.18
146.56
145.00
143.46
141.96
140.50
139.18
137.91
133.28
131.33
129.25
127.24
125.13
123.09
120.85
118.85
116.97
114.89
112.68
110.43
15.67
13.51
11.82
10.51
9.47
8.59
7.86
7.23
6.72
6.26
5.86
5.51
5.20
4.93
4.68
4.46
4.26
4.07
3.91
3.75
3.61
3.48
3.36
3.25
3.14
3.05
2.95
2.87
2.79
2.71
2.64
2.57
2.50
2.55
2.51
2.47
2.42
2.38
2.34
2.31
2.28
2.24
2.21
2.18
2.15
106.53
100.36
95.18
90.63
86.53
82.82
79.41
76.19
73.13
70.17
67.33
64.62
61.95
59.34
56.77
54.27
51.80
49.34
46.97
44.57
42.21
39.86
37.54
35.25
32.97
30.71
28.46
26.22
24.00
21.75
19.55
17.37
15.34
12.52
10.15
7.62
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.06
0.06
0.06
0.06
28.11
24.30
21.50
19.18
17.49
15.99
14.99
13.89
13.12
12.20
11.65
11.00
10.43
10.09
9.33
9.11
8.72
8.23
7.91
7.48
6.98
6.55
6.11
5.76
5.67
5.28
4.73
4.39
3.80
3.47
2.94
2.37
2.17
1.14
0.41
0.28
0.28
0.28
0.28
0.28
0.28
0.28
0.28
0.28
0.28
0.29
0.29
0.29
0.29
0.29
0.29
0.29
0.30
0.30
0.30
0.30
0.30
0.30
0.31
0.31
0.31
0.31
0.31
0.31
0.31
0.32
0.32
0.32
0.30
0.30
0.30
0.30
0.30
0.30
0.29
0.29
0.29
0.29
0.29
0.29
-125.75
-134.41
-140.94
-146.22
-150.43
-154.02
-156.96
-159.56
-161.88
-163.82
-165.60
-167.20
-168.79
-170.11
-171.44
-172.55
-173.63
-174.74
-175.59
-176.51
-177.41
-178.34
-179.07
-179.86
179.17
178.58
177.94
177.26
176.65
176.12
175.68
175.37
174.54
171.63
170.81
169.88
168.68
167.57
166.08
164.67
163.90
162.91
161.64
160.21
158.83
-0.73
-1.59
-2.45
-3.33
-4.30
-5.16
-6.12
-7.13
-7.96
-8.99
5.19
2.91
0.60
-1.66
-4.25
-6.61
-8.92
-11.33
-13.72
8
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Tel: +44 (0) 1325 301111
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Website: www.filtronic.com
Datasheet v3.0
S-PARAMETERS (CONT.):
Biased 10V, 200mA
FREQ-GHZ
S11MAG S11ANG S21MAG S21ANG S12MAG S12ANG S22MAG S22ANG
5.00
5.10
5.20
5.30
5.40
5.50
5.60
5.70
5.80
5.90
6.00
6.10
6.20
6.30
6.40
6.50
6.60
6.70
6.80
6.90
7.00
7.10
7.20
7.30
7.40
7.50
7.60
7.70
7.80
7.90
8.00
8.10
8.20
8.30
8.40
8.50
8.60
8.70
8.80
8.90
9.00
9.10
9.20
9.30
9.40
9.50
9.60
9.70
9.80
9.90
10.00
0.82
0.81
0.81
0.81
0.81
0.81
0.80
0.80
0.80
0.80
0.80
0.80
0.80
0.80
0.80
0.80
0.79
0.79
0.78
0.79
0.79
0.79
0.79
0.79
0.79
0.80
0.80
0.80
0.80
0.80
0.80
0.80
0.80
0.81
0.81
0.81
0.81
0.81
0.81
0.81
0.81
0.81
0.82
0.82
0.82
0.82
0.82
0.82
0.83
0.82
0.82
108.18
105.83
103.46
101.13
98.72
96.33
93.92
91.39
88.80
86.30
83.78
81.27
78.66
76.05
73.44
70.67
67.95
65.31
63.23
61.09
58.43
55.67
52.99
50.30
47.73
45.33
42.75
40.08
37.57
34.99
32.44
30.01
27.63
25.29
22.80
20.44
18.12
15.80
13.42
11.15
8.87
2.13
2.10
2.08
2.05
2.03
2.00
1.98
1.96
1.93
1.91
1.89
1.87
1.85
1.82
1.80
1.78
1.75
1.72
1.71
1.71
1.70
1.68
1.66
1.64
1.62
1.61
1.59
1.57
1.55
1.53
1.52
1.50
1.48
1.47
1.45
1.43
1.42
1.40
1.39
1.37
1.36
1.35
1.34
1.33
1.32
1.30
1.29
1.28
1.27
1.26
1.25
-16.13
-18.60
-21.11
-23.59
-26.08
-28.59
-31.11
-33.62
-36.18
-38.70
-41.23
-43.77
-46.41
-49.03
-51.60
-54.20
-56.75
-59.02
-60.71
-63.43
-66.42
-69.26
-71.95
-74.59
-77.04
-79.49
-82.36
-85.07
-87.69
-90.32
-92.91
-95.45
-97.99
-100.59
-103.20
-105.74
-108.27
-110.78
-113.31
-115.81
-118.27
-120.72
-123.22
-125.78
-128.34
-130.90
-133.47
-136.06
-138.66
-141.19
-143.71
0.06
0.06
0.06
0.07
0.07
0.07
0.07
0.07
0.07
0.07
0.07
0.08
0.08
0.08
0.08
0.08
0.08
0.08
0.08
0.09
0.09
0.09
0.09
0.09
0.10
0.10
0.10
0.10
0.10
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.12
0.12
0.12
0.12
0.12
0.12
0.13
0.13
0.13
0.13
0.13
0.13
0.14
0.14
0.14
-9.98
0.29
0.29
0.29
0.29
0.29
0.29
0.29
0.29
0.29
0.29
0.29
0.29
0.29
0.29
0.29
0.29
0.29
0.28
0.28
0.29
0.30
0.30
0.30
0.30
0.30
0.30
0.31
0.31
0.31
0.32
0.32
0.32
0.32
0.32
0.32
0.33
0.33
0.33
0.33
0.33
0.33
0.33
0.33
0.33
0.34
0.34
0.34
0.34
0.34
0.34
0.34
157.42
155.91
154.46
152.90
151.36
149.74
148.11
146.28
144.50
142.74
141.04
139.39
137.34
135.24
133.07
130.98
128.65
126.73
126.99
126.51
124.01
121.40
118.89
116.47
114.40
113.31
110.92
108.33
105.97
103.61
101.30
99.02
96.94
94.64
92.31
89.97
87.60
85.33
83.03
80.64
78.35
76.22
74.12
71.85
69.43
67.07
64.55
62.06
-11.10
-12.35
-13.63
-14.83
-16.07
-17.49
-18.72
-20.03
-21.39
-22.73
-24.19
-26.10
-27.81
-29.44
-30.98
-32.63
-33.63
-32.15
-33.13
-35.89
-38.30
-40.44
-42.24
-43.66
-44.69
-46.91
-49.10
-51.11
-53.07
-55.02
-56.92
-58.66
-60.57
-62.43
-64.13
-65.92
-67.73
-69.56
-71.48
-73.28
-75.07
-76.87
-78.81
-80.75
-82.67
-84.62
-86.70
-88.65
-90.55
-92.29
6.58
4.40
2.09
-0.07
-2.41
-4.64
-7.03
-9.45
-11.95
-14.29
59.65
57.31
54.97
9
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Tel: +44 (0) 1325 301111
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Website: www.filtronic.com
Datasheet v3.0
TAPE AND REEL DIMENSIONS AND PART ORIENTATION
f xxx
xxx
PACKAGE MARKING CODE
Example:
f1ZD
P2F
f = Filtronic
1ZD = Lot / Date Code
P2F = Status, Part Code, Part
Type
Parts per reel 178mm = 1000
330mm = 2500
10
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website: www.filtronic.com
Datasheet v3.0
PREFERRED ASSEMBLY INSTRUCTIONS:
ORDERING INFORMATION:
This package is compatible with both lead free
and leaded solder reflow processes as defined
within IPC/JEDEC J-STD-020C. The maximum
package temperature should not exceed
260°C. Package leads are gold plated.
PART NUMBER
FPD1000AS
DESCRIPTION
Packaged pHEMT
FPD1000AS-EB
Packaged pHEMT evaluation board
EB-1000AS-AB (880MHz)
EB-1000AS-AA (1.85GHz)
EB-1000AS-AD (2.14GHz)
EB-1000AS-AG (2.5 to 2.7GHz)
EB-1000AS-AH (3.5GHz)
HANDLING PRECAUTIONS:
To avoid damage to
the
devices
care
should be exercised
during
Proper
handling.
Electrostatic
Discharge
(ESD)
precautions should be observed at all stages
of storage, handling, assembly, and testing.
ESD/MSL RATING:
These devices should be treated as Class 1A
(250-500 V) as defined in JEDEC Standard
No. 22-A114. Further information on ESD
control measures can be found in MIL-STD-
1686 and MIL-HDBK-263.
The device has a MSL rating of Level 1. To
determine this rating, preconditioning was
performed to the device per, the Pb-free solder
profile defined within IPC/JEDEC J-STD-020C,
Moisture / Reflow sensitivity classification for
non-hermatic solid state surface mount devices
APPLICATION NOTES & DESIGN DATA:
Application Notes and design data including S-
parameters, noise parameters and device
model are available on request.
DISCLAIMERS:
This product is not designed for use in any
space based or life sustaining/supporting
equipment.
11
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Tel: +44 (0) 1325 301111
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Website: www.filtronic.com
相关型号:
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