FPD1050-000 [RFMD]
0.75W POWER pHEMT; 0.75W功率pHEMT制
| 型号： | FPD1050-000 |
| 厂家： | 
RF MICRO DEVICES |
| 描述： | 0.75W POWER pHEMT |
| 文件： | 总4页 (文件大小：260K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FPD1050
0.75W Power
pHEMT
FPD1050
0.75W POWER pHEMT
Package Style: Bare Die
Product Description
Features
The FPD1050 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transis-
tor (pHEMT), featuring a 0.25μmx1050μm Schottky barrier gate, defined by high-
resolution stepper-based photolithography. The double recessed gate structure
minimizes parasitics to optimize performance. The epitaxial structure and process-
ing have been optimized for reliable high-power applications. The FPD1050 is also
available in the low-cost plastic SOT89 package.
28.5dBm Linear Output
Power at 12GHz
11dB Power Gain at 12GHz
14dB Max Stable Gain at
12GHz
41 dBm O
IP3
45% Power-Added Efficiency
Optimum Technology
Matching® Applied
Applications
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
Narrowband and Broadband
High-Performance Amplifiers
SATCOM Uplink Transmitters
PCS/Cellular Low-Voltage
High-Efficiency Output Ampli-
fiers
GaAs pHEMT
9
Si CMOS
Si BJT
Medium-Haul Digital Radio
Transmitters
GaN HEMT
InP HBT
RF MEMS
LDMOS
Specification
Parameter
Unit
Condition
Min.
27.5
Typ.
28.5
14.0
11.0
45
Max.
P
Gain Compression
dBm
dB
V
V
V
V
V
=8V, I =50% I
DS
1dB
DS
DS
DS
DS
DS
DSS
DSS
DSS
S21/S12 (MSG)
Power Gain at P
PAE
=8V, I =50% I
DS
(G
)
10.0
dB
=8V, I =50% I
DS
1dB 1dB
%
=8V, I =50% I , P =P
DS
DSS
DSS
OUT
1dB
OIP
39
dBm
dBm
mA
=8V, I =50% I
DS
3
41
Matched for optimal power, tuned for best IP
3
Saturated Drain-Source Current
(IDSS)
260
325
385
V
=1.3V, V =0V
DS
GS
Maximum Drain-Source Current
(IMAX)
520
mA
V
=1.3V, V ≈+1V
DS
GS
Transconductance (GM)
280
15
ms
μA
V
V
V
V
=1.3V, V =0V
DS
GS
DS
GS
Gate-Source Leakage Current (IGSO)
=-5V
Pinch-Off Voltage (V )
|1.0|
|14.0|
=1.3V, I =1mA
DS
P
Gate-Source Breakdown Voltage
|12.0|
|14.5|
V
I
=3mA
=3mA
>6V
GS
(V
)
BDGS
Gate-Drain Breakdown Voltage
(V
|16.0|
45
V
I
GD
)
BDGD
Thermal Resistivity (θJC) *
*Note: T
°C/W
V
DS
=22°C, RF specifications measured at f=12GHz using CW signal.
AMBIENT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Rev A0 DS080702 3.0
1 of 4
FPD1050
Absolute Maximum Ratings1
Parameter
Caution! ESD sensitive device.
Rating
Unit
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
Drain-Source Voltage (V
2
)
10
V
DS
(-3V<V <-0.5V)
GS
Gate-Source Voltage (V
)
-3
V
GS
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
(0V<V <+8V)
DS
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Drain-Source Current (I
)
I
DSS
DS
(For V <2V)
DS
Gate Current (I ) (Forward or reverse)
10
23
mA
G
RF Input Power (P
)
dBm
IN
(Under any acceptable bias state)
Channel Operating Temperature (T
)
175
°C
°C
CH
(Under any acceptable bias state)
Storage Temperature (T
)
-65 to 150
STG
(Non-Operating Storage)
3, 4, 5
3.4
80
W
%
Total Power Dissipation (P
)
TOT
6
Simultaneous Combination of Limits
(2 or more max. limits)
Notes:
1
T
=22°C unless otherwise noted; exceeding any one of these absolute max-
AMBIENT
imum ratings may cause permanent damage to the device.
2
Operating at absolute maximum V continuously is not recommended. If operation
D
at 10V is considered then I must be reduced in order to keep the part within
DS
its thermal power dissipation limits. Therefore V is restricted to <-0.5V.
GS
3
Total Power Dissipation to be de-rated as follows above 22°C: P =3.4-
TOT
(0.022W/°C)xT , where T =heatsink or ambient temperature above 22°C.
HS
HS
Example: For a 85°C carrier temperature: P =3.4-(0.022x(85-22))=2.01W
TOT
4
Total Power Dissipation (P ) defined as (P +P )–P , where P : DC Bias
TOT
DC
IN
OUT
DC
Power, P : RF Input Power, P : RF Output Power.
Users should avoid exceeding 80% of 2 or more Limits simultaneously.
Thermal Resistivity specification assumes a Au/Sn eutectic die attach onto an Au-
plated copper heatsink or rib.
IN
OUT
5
6
Pad Layout
Pad
A
Description
Gate pad.
Pin Coordinates (μm)
130, 220
380, 220
B
C
Drain pad.
Source pad.
B
A
C
Note: Coordinates are referenced from the bottom left hand
corner of the die to the center of the bond pad opening.
Die Size (μm)
Die Thickness (μm)
Min. Bond Pad Opening (μmxμm)
470 x440
75
67x 77
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
2 of 4
Rev A0 DS080702 3.0
FPD1050
Preferred Assembly Instructions
GaAs devices are fragile and should be handled with great care. Specially designed collets should be used where possible.
The back of the die is metallized and the recommended mounting method is by the use of conductive epoxy. Epoxy should be
applied to the attachment surface uniformly and sparingly to avoid encroachment of epoxy on to the top face of the die and
ideally should not exceed half the chip height. For automated dispense Ablestick LMISR4 is recommended. For manual dis-
pense Ablestick 84-1 LMI or 84-1 LMIT are recommended. These should be cured at a temperature of 150°C for 1 hour in an
oven especially set aside for epoxy curing only. If possible, the curing oven should be flushed with dry nitrogen. The gold-tin
(80% Au 20% Sn) eutectic die attach has a melting point of approximately 280°C but the absolute temperature being used
depends on the leadframe material used and the particular application. The maximum time should be kept to a minimum.
This part has gold (Au) bond pads requiring the use of gold (99.99% pure) bondwire. It is recommended that 25.4mm diameter
gold wire be used. Recommended lead bond technique is thermocompression wedge bonding with 0.001” (25µm) diameter
wire. Bond force, time stage temperature, and ultrasonics are all critical parameters and the settings are dependant on the
setup and application being used. Ultrasonic or thermosonic bonding is not recommended.
Bonds should be made from the die first and then to the mounting substrate or package. The physical length of the bondwires
should be minimized especially when making RF or ground connections.
Handling Precautions
To avoid damage to the devices, care should be exercised during handling. Proper
Electrostatic Discharge (ESD) precautions should be observed at all stages of storage,
handling, assembly, and testing.
ESD/MSL Rating
These devices should be treated as Class 0 (0V to 250V) using the human body model as defined in JEDEC Standard No. 22-
A114. Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263.
Application Notes and Design Data
Application Notes and design data including S-parameters and device model are available on request and from
www.rfmd.com.
Reliability
An MTTF of in excess of 4.2 million hours at a channel temperature of 150°C is achieved for the process used to manufacture
this device.
Disclaimers
This product is not designed for use in any space-based or life-sustaining/supporting equipment.
Ordering Information
Delivery Quantity
Ordering Code
FPD1050-000
Standard Order Quantity (waffle-pack)
Small Quantity (25)
FPD1050-000SQ
FPD1050-000S3
Small Quantity (3)
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Rev A0 DS080702 3.0
3 of 4
FPD1050
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
4 of 4
Rev A0 DS080702 3.0
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