FPD1050SOT89 [FILTRONIC]
LOW NOISE HIGH LINEARITY PACKAGED PHEMT; 低噪声高线性度PACKAGED PHEMT
| 型号： | FPD1050SOT89 |
| 厂家： | 
FILTRONIC COMPOUND SEMICONDUCTORS |
| 描述： | LOW NOISE HIGH LINEARITY PACKAGED PHEMT |
| 文件： | 总8页 (文件大小：237K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FPD200 TOM3 and TOM2 Models
24/01/2005
Modelling Report
FPD200 TOM3 and TOM2 Models
Version 1.0
-
Device Design and Modelling Group
Filtronic Compound Semiconductor Ltd.
1
FPD200 TOM3 and TOM2 Models
24/01/2005
Introduction
This report describes the models for the FPD200 discrete p-HEMT device. The
models coupled with package models (given elsewhere). The model describes the
device and the inbuilt inductance provided by the connecting bond wires. The metal
fixture up until the connecting bond wires has been de-embedded.
Models
Two models are provided for different simulators these are as follows:
TOM3
This model provides a good fit to the measured data and has an advanced charge
form. This allows the TOM3 model to accurately model the device over a wide range
of operating conditions.
This model is recommended for use in most simulators
TOM2
This model is provided for the simulators that do not include TOM3 within there
component set. This model employs a similar charge from to the TOM3 but only has a
simple charge model. Consequently I recommend this model only be used when the
TOM3 component is not present.
2
FPD200 TOM3 and TOM2 Models
24/01/2005
TOM3 Model
The TOM3 model was extracted for the FPD200 discrete part is shown below:
External Parasitics
The following network shows the external parasitics present in the device model:
PORT
P=2
Z=50 Ohm
CdGround1
C=0.00822 pF
IdExt
CdGround2
Id
TOM3/TOM2
Model
Rd
PORT
2
P=1
IgExt
Ig
Rg
Z=5 0 O hm
TOM3
ID=TOMparms
1
NG=10
TJ=24.85 DegC
W= 75
CdsExt
3
Is
CgGround1
CgGround2
Rs
IsExt
PO RT
P=3
Z=50 Ohm
Figure 1 – Schematic of fitted model including external parasitics
3
FPD200 TOM3 and TOM2 Models
24/01/2005
Shown below is a table of the external parasitics.
CdGround1
CdGround2
CgGround1
CgGround2
IdExt
0.024 pF
0.057 pF
0.01224 pF
0.121 pF
0.2754 nH
0 nH
Ig
0.136 nH
IsExt
Is
0.0542 nH
0.01 nH
Rd
3.402 Ω
Rs
3.302 Ω
Id
Rg
3.243 Ω
IgExt
0.2907 nH
CdsExt
0.000156 pF
Table 1 – External parasitic values
4
FPD200 TOM3 and TOM2 Models
24/01/2005
TOM3 Model Parameters
The TOM3 model employs an excellent form for the charge relation within the p-
HEMT discrete. Shown below are the extracted parameters for the FPD200 device:
VTO
-0.6471 V QGG0
1.227E-16
0.000234
1E-11 mA
0.8 V
1
ALPHA
BETA
LAMBDA
GAMMA
Q
3.053
CDS
0.000682 IS
-0.02432 EG
0.03358
0.9352
4.279
N
XTI
2
K
TAU
VBI
0.001 ns
1 V
VST
0.05677
0.2041
MST
TAU_GD
1000 ns
0.01194
0.01Ω
0Ω
ILK
1.8E-6 mA KGAMMA
PLK
1.5 V
RG
QGQH
QGSH
QGDH
QGIO
QGQL
QGAG
QGAD
QGCL
QGGB
7.349E-16 RGSH
8.451E-16 RD
2.073E-17 RS
2.002E-6 LS
8.58E-16 LG
0.01Ω
0.01Ω
0 nH
0 nH
2.21
LD
0 nH
2.241
NG
2
7.715E-17 W
144.55
100
Table 2 – TOM3 Model Parameters
Add these parameters to the TOM3 model placed within the external parasitics.
5
FPD200 TOM3 and TOM2 Models
24/01/2005
TOM2 Model Parameters
The TOM3 model evolved from the TOM3 model and hence share almost exactly the
same form for the calculation of the non-linear current. The TOM2 model only
employs a simple charge form and hence should only be used when TOM3
components are not available. Shown below are the extracted elements for the
FPD200 device:
VTO
ALPHA
BETA
GAMMA
DELTA
Q
-0.6471 V VMAX
3.453 CGD
0.95 V
7.45E-5 pF
0.002467 pF
0.0002542 pF
0.01 Ω
0.01 Ω
17 V
0.000682 CGS
0.0155
36.23
0.9
CDS
RIS
RID
VBR
RDB
CBS
LS
NG
2
ND
0
1.2E5 Ω
1500 pF
0 nH
TAU
RG
0.001
0.01
0
RGSH
RD
LG
0 nH
0.01
0.01
LD
0 nH
RS
AFAC
200
IS
1E-11 mA NFING
2
N
1
EG
XTI
0.8
VBI
1 V
2
VDELTA
0.2 V
Table 3 – TOM2 Model Parameters
Add these parameters to the TOM2 model placed within the external parasitics.
6
FPD200 TOM3 and TOM2 Models
24/01/2005
Results – TOM2
IV
80
60
40
20
0
p5
p4
p3
p2
p1
p1: Vstep = -1 V
p3: Vstep = -0.5 V
p5: Vstep = 0 V
p2: Vstep = -0.75 V
p4: Vstep = -0.25 V
-20
0
2
4
6
8
10
Voltage
Figure 2 - Fitted vs. Modelled IV curves for the TOM2 model
Sparm Mid
Swp Max
28GHz
Swp Min
0.25GHz
Figure 3 - Fitted vs. Modelled S-parameters for the TOM2 model (biased at Vg=-0.3V Vd=7V)
7
FPD200 TOM3 and TOM2 Models
24/01/2005
Results – TOM3
IV
80
60
40
20
0
p5
p4
p3
p2
p1
p1: Vstep = -1 V
p3: Vstep = -0.5 V
p2: Vstep = -0.75 V
p4: Vstep = -0.25 V
-20
0
2
4
p5: Vstep = 0 V 6
Voltage
8
10
Figure 4 - Fitted vs. Modelled IV curves for the TOM3 model
Sparm Mid
Swp Max
28GHz
Swp Min
0.25GHz
Figure 5 - Fitted vs. Modelled S-parameters for the TOM3 model (biased at Vg=-0.3V Vd=7V)
8
相关型号：
©2020 ICPDF网 联系我们和版权申明