FPD1050SOT89 [FILTRONIC]

LOW NOISE HIGH LINEARITY PACKAGED PHEMT; 低噪声高线性度PACKAGED PHEMT
FPD1050SOT89
型号: FPD1050SOT89
厂家: FILTRONIC COMPOUND SEMICONDUCTORS    FILTRONIC COMPOUND SEMICONDUCTORS
描述:

LOW NOISE HIGH LINEARITY PACKAGED PHEMT
低噪声高线性度PACKAGED PHEMT

晶体 晶体管 放大器
文件: 总8页 (文件大小:237K)
中文:  中文翻译
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FPD200 TOM3 and TOM2 Models  
24/01/2005  
Modelling Report  
FPD200 TOM3 and TOM2 Models  
Version 1.0  
-
Device Design and Modelling Group  
Filtronic Compound Semiconductor Ltd.  
1
FPD200 TOM3 and TOM2 Models  
24/01/2005  
Introduction  
This report describes the models for the FPD200 discrete p-HEMT device. The  
models coupled with package models (given elsewhere). The model describes the  
device and the inbuilt inductance provided by the connecting bond wires. The metal  
fixture up until the connecting bond wires has been de-embedded.  
Models  
Two models are provided for different simulators these are as follows:  
TOM3  
This model provides a good fit to the measured data and has an advanced charge  
form. This allows the TOM3 model to accurately model the device over a wide range  
of operating conditions.  
This model is recommended for use in most simulators  
TOM2  
This model is provided for the simulators that do not include TOM3 within there  
component set. This model employs a similar charge from to the TOM3 but only has a  
simple charge model. Consequently I recommend this model only be used when the  
TOM3 component is not present.  
2
FPD200 TOM3 and TOM2 Models  
24/01/2005  
TOM3 Model  
The TOM3 model was extracted for the FPD200 discrete part is shown below:  
External Parasitics  
The following network shows the external parasitics present in the device model:  
PORT  
P=2  
Z=50 Ohm  
CdGround1  
C=0.00822 pF  
IdExt  
CdGround2  
Id  
TOM3/TOM2  
Model  
Rd  
PORT  
2
P=1  
IgExt  
Ig  
Rg  
Z=5 0 O hm  
TOM3  
ID=TOMparms  
1
NG=10  
TJ=24.85 DegC  
W= 75  
CdsExt  
3
Is  
CgGround1  
CgGround2  
Rs  
IsExt  
PO RT  
P=3  
Z=50 Ohm  
Figure 1 – Schematic of fitted model including external parasitics  
3
FPD200 TOM3 and TOM2 Models  
24/01/2005  
Shown below is a table of the external parasitics.  
CdGround1  
CdGround2  
CgGround1  
CgGround2  
IdExt  
0.024 pF  
0.057 pF  
0.01224 pF  
0.121 pF  
0.2754 nH  
0 nH  
Ig  
0.136 nH  
IsExt  
Is  
0.0542 nH  
0.01 nH  
Rd  
3.402  
Rs  
3.302 Ω  
Id  
Rg  
3.243 Ω  
IgExt  
0.2907 nH  
CdsExt  
0.000156 pF  
Table 1 – External parasitic values  
4
FPD200 TOM3 and TOM2 Models  
24/01/2005  
TOM3 Model Parameters  
The TOM3 model employs an excellent form for the charge relation within the p-  
HEMT discrete. Shown below are the extracted parameters for the FPD200 device:  
VTO  
-0.6471 V QGG0  
1.227E-16  
0.000234  
1E-11 mA  
0.8 V  
1
ALPHA  
BETA  
LAMBDA  
GAMMA  
Q
3.053  
CDS  
0.000682 IS  
-0.02432 EG  
0.03358  
0.9352  
4.279  
N
XTI  
2
K
TAU  
VBI  
0.001 ns  
1 V  
VST  
0.05677  
0.2041  
MST  
TAU_GD  
1000 ns  
0.01194  
0.01  
0Ω  
ILK  
1.8E-6 mA KGAMMA  
PLK  
1.5 V  
RG  
QGQH  
QGSH  
QGDH  
QGIO  
QGQL  
QGAG  
QGAD  
QGCL  
QGGB  
7.349E-16 RGSH  
8.451E-16 RD  
2.073E-17 RS  
2.002E-6 LS  
8.58E-16 LG  
0.01Ω  
0.01Ω  
0 nH  
0 nH  
2.21  
LD  
0 nH  
2.241  
NG  
2
7.715E-17 W  
144.55  
100  
Table 2 – TOM3 Model Parameters  
Add these parameters to the TOM3 model placed within the external parasitics.  
5
FPD200 TOM3 and TOM2 Models  
24/01/2005  
TOM2 Model Parameters  
The TOM3 model evolved from the TOM3 model and hence share almost exactly the  
same form for the calculation of the non-linear current. The TOM2 model only  
employs a simple charge form and hence should only be used when TOM3  
components are not available. Shown below are the extracted elements for the  
FPD200 device:  
VTO  
ALPHA  
BETA  
GAMMA  
DELTA  
Q
-0.6471 V VMAX  
3.453 CGD  
0.95 V  
7.45E-5 pF  
0.002467 pF  
0.0002542 pF  
0.01 Ω  
0.01 Ω  
17 V  
0.000682 CGS  
0.0155  
36.23  
0.9  
CDS  
RIS  
RID  
VBR  
RDB  
CBS  
LS  
NG  
2
ND  
0
1.2E5 Ω  
1500 pF  
0 nH  
TAU  
RG  
0.001  
0.01  
0
RGSH  
RD  
LG  
0 nH  
0.01  
0.01  
LD  
0 nH  
RS  
AFAC  
200  
IS  
1E-11 mA NFING  
2
N
1
EG  
XTI  
0.8  
VBI  
1 V  
2
VDELTA  
0.2 V  
Table 3 – TOM2 Model Parameters  
Add these parameters to the TOM2 model placed within the external parasitics.  
6
FPD200 TOM3 and TOM2 Models  
24/01/2005  
Results – TOM2  
IV  
80  
60  
40  
20  
0
p5  
p4  
p3  
p2  
p1  
p1: Vstep = -1 V  
p3: Vstep = -0.5 V  
p5: Vstep = 0 V  
p2: Vstep = -0.75 V  
p4: Vstep = -0.25 V  
-20  
0
2
4
6
8
10  
Voltage  
Figure 2 - Fitted vs. Modelled IV curves for the TOM2 model  
Sparm Mid  
Swp Max  
28GHz  
Swp Min  
0.25GHz  
Figure 3 - Fitted vs. Modelled S-parameters for the TOM2 model (biased at Vg=-0.3V Vd=7V)  
7
FPD200 TOM3 and TOM2 Models  
24/01/2005  
Results – TOM3  
IV  
80  
60  
40  
20  
0
p5  
p4  
p3  
p2  
p1  
p1: Vstep = -1 V  
p3: Vstep = -0.5 V  
p2: Vstep = -0.75 V  
p4: Vstep = -0.25 V  
-20  
0
2
4
p5: Vstep = 0 V 6  
Voltage  
8
10  
Figure 4 - Fitted vs. Modelled IV curves for the TOM3 model  
Sparm Mid  
Swp Max  
28GHz  
Swp Min  
0.25GHz  
Figure 5 - Fitted vs. Modelled S-parameters for the TOM3 model (biased at Vg=-0.3V Vd=7V)  
8

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