EFA025AL [EXCELICS]
High Gain GaAs Power FET; 高增益砷化镓功率FET
| 型号： | EFA025AL |
| 厂家： | 
EXCELICS SEMICONDUCTOR, INC. |
| 描述： | High Gain GaAs Power FET |
| 文件： | 总2页 (文件大小：25K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EFA025AL
Excelics
DATA SHEET
High Gain GaAs Power FET
420
•
•
•
•
•
+20.0dBm TYPICAL OUTPUT POWER
11.5dB TYPICAL POWER GAIN AT 12GHz
0.3 X 250 MICRON RECESSED “MUSHROOM” GATE
Si3N4 PASSIVATION
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
50
D
104
D
48
90
260
S
S
G
G
40
•
Idss SORTED IN 5mA PER BIN RANGE
59
78
50
Chip Thickness: 75 ± 13 microns
All Dimensions In Microns
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS
PARAMETERS/TEST CONDITIONS
MIN TYP MAX UNIT
Output Power at 1dB Compression
Vds=8V, Ids=50% Idss
Gain at 1dB Compression
Vds=8V, Ids=50% Idss
Power Added efficiency at 1dB Compression
Vds=8V, Ids=50% Idss
f=12GHz
17.0
20.0
20.0
11.5
9.0
P1dB
dBm
dB
f=18GHz
f=12GHz
f=18GHz
9.5
G1dB
PAE
%
f=12GHz
38
45
Idss
Gm
Saturated Drain Current Vds=3V, Vgs=0V
20
30
65
mA
mS
V
Transconductance
Pinch-off Voltage
Vds=3V, Vgs=0V
50
-1.5
-15
-14
155
Vp
Vds=3V, Ids=1.0mA
-2.5
BVgd
BVgs
Rth
Drain Breakdown Voltage Igd=1.0mA
Source Breakdown Voltage Igs=1.0mA
Thermal Resistance (Au-Sn Eutectic Attach)
-12
-7
V
V
oC/W
MAXIMUM RATINGS AT 25OC
SYMBOLS
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
ABSOLUTE1
12V
CONTINUOUS2
8V
Vds
Vgs
Ids
-8V
-4V
Idss
Idss
Igsf
Pin
Tch
Tstg
Pt
Forward Gate Current
Input Power
6mA
1mA
19dBm
175oC
-65/175oC
@ 3dB Compression
150oC
-65/150oC
Channel Temperature
Storage Temperature
Total Power Dissipation
880mW
730mW
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
EFA025AL
DATA SHEET
High Gain GaAs Power FET
S-PARAMETERS
8V, 1/2 Idss
FREQ
--- S11 ---
--- S21 ---
--- S12 ---
MAG ANG MAG
--- S22 ---
ANG
(GHz) MAG ANG
1.0 0.990 -19.8
2.0 0.970 -38.4
3.0 0.927 -55.0
4.0 0.895 -69.0
5.0 0.862 -81.3
6.0 0.838 -91.8
7.0 0.815 -101.4
8.0 0.802 -110.2
9.0 0.779 -118.3
10.0 0.769 -125.4
11.0 0.765 -132.3
12.0 0.764 -139.0
13.0 0.769 -144.9
14.0 0.771 -150.5
15.0 0.779 -155.4
16.0 0.781 -159.8
17.0 0.786 -163.1
18.0 0.793 -166.7
19.0 0.794 -170.0
20.0 0.786 -173.1
21.0 0.773 -175.2
22.0 0.762 -177.7
23.0 0.763 -179.9
24.0 0.762 176.7
25.0 0.759 173.1
26.0 0.753 170.5
MAG ANG
5.439 163.7
5.095 150.4
4.719 137.3
4.328 126.3
3.961 116.0
3.630 107.0
0.014
0.027
0.037
0.043
0.049
0.051
0.054
0.055
0.056
0.053
0.052
0.051
0.051
0.050
0.051
0.053
0.056
0.061
0.063
0.067
0.070
0.071
0.076
0.083
0.088
0.092
78.3 0.787
68.7 0.772
58.7 0.751
52.7 0.727
45.8 0.709
41.8 0.692
37.2 0.681
33.0 0.675
28.4 0.663
25.0 0.655
23.8 0.651
22.4 0.645
20.1 0.636
19.7 0.628
20.2 0.619
20.5 0.614
19.3 0.593
17.0 0.580
16.1 0.577 -105.2
14.6 0.582 -116.6
12.7 0.590 -128.3
13.3 0.604 -138.3
16.5 0.637 -146.1
16.6 0.678 -153.2
16.8 0.703 -158.7
17.9 0.721 -161.8
-7.4
-14.1
-20.6
-26.3
-32.1
-37.1
-42.0
-46.6
-51.0
-54.8
-58.5
-62.0
-65.3
-69.1
-73.7
-79.6
-86.9
-95.4
3.327
3.078
2.822
2.613
2.436
2.285
2.150
2.032
1.945
1.852
1.783
1.732
1.674
1.607
1.505
1.437
1.368
1.305
98.8
90.9
83.7
77.3
71.1
64.8
58.9
53.3
47.5
41.3
35.8
29.6
22.7
15.7
9.1
3.0
-2.4
-8.5
1.235 -14.3
1.168 -18.0
Note:
The data included 0.7 mils diameter Au bonding wires:
2 gate wires, 15 mils each; 2 drain wires, 20 mils each; 4 source wires, 7 mils each.
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