EFA040A-100P [EXCELICS]
Low Distortion GaAs Power FET; 低失真功率的GaAs FET
| 型号： | EFA040A-100P |
| 厂家： | 
EXCELICS SEMICONDUCTOR, INC. |
| 描述： | Low Distortion GaAs Power FET |
| 文件： | 总2页 (文件大小：88K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EFA040A-100P
UPDATED 11/17/2006
Low Distortion GaAs Power FET
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NON-HERMETIC 100MIL METAL FLANGE PACKAGE
+23.0dBm TYPICAL OUTPUT POWER
9.0dB TYPICAL POWER GAIN AT 12GHz
0.3 X 400 MICRON RECESSED “MUSHROOM” GATE
Si3N4 PASSIVATION
G
D
ADVANCED EPITAXIAL HETEROJUNCTION
PROFILE PROVIDES HIGH POWER
EFFICIENCY, LINEARITY AND RELIABILITY
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS
PARAMETERS/TEST CONDITIONS
MIN
TYP
MAX
UNIT
21.0
23.0
23.0
9.0
Output Power at 1dB Compression
VDS = 8V, IDS ≈ 50% IDSS
f= 12GHz
f= 18GHz
dBm
P1dB
Gain at 1dB Compression
VDS = 8V, IDS ≈ 50% IDSS
Power Added Efficiency at 1dB Compression
f= 12GHz
f= 18GHz
7.5
dB
%
G1dB
6.5
35
PAE
IDSS
VDS = 8V, IDS ≈ 50% IDSS
Saturated Drain Current
Transconductance
f=12GHz
60
45
105
60
160
-3.5
mA
mS
V
VDS = 3 V, VGS = 0 V
VDS = 3 V, VGS = 0 V
VDS = 3 V, IDS = 1.0 mA
IGD = 1.0mA
GM
VP
-2.0
-15
Pinch-off Voltage
BVGD
BVGS
RTH
-13
-7
V
Drain Breakdown Voltage
Source Breakdown Voltage
-14
V
IGS = 1.0mA
115*
ºC/W
Thermal Resistance (Au-Sn Eutectic Attach)
Note: * Overall Rth depends on case mounting.
MAXIMUM RATINGS AT 25OC
SYMBOLS
VDS
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Forward Gate Current
Reverse Gate Current
Input Power
ABSOLUTE1
12V
CONTINUOUS2
8V
VGS
-5V
-4V
Igf
1.8 mA
0.3 mA
20 dBm
175oC
0.6 mA
0.1 mA
Igr
Pin
@ 3dB Compression
175oC
Tch
Tstg
Pt
Channel Temperature
Storage Temperature
Total Power Dissipation
-65/175oC
-65/175oC
1.2 W
1.2 W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 2
Revised November 2006
EFA040A-100P
UPDATED 11/17/2006
DISCLAIMER
Low Distortion GaAs Power FET
EXCELICS SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. EXCELICS DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN.
LIFE SUPPORT POLICY
EXCELICS SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE
SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF EXCELICS SEMICONDUCTOR,
INC. AS HERE IN:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for
use provided in the labeling, can be reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be
reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 2 of 2
Revised November 2006
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