EFA040A-70 [EXCELICS]

Low Distortion GaAs Power FET; 低失真功率的GaAs FET
EFA040A-70
型号: EFA040A-70
厂家: EXCELICS SEMICONDUCTOR, INC.    EXCELICS SEMICONDUCTOR, INC.
描述:

Low Distortion GaAs Power FET
低失真功率的GaAs FET

文件: 总2页 (文件大小:23K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
EFA040A-70  
Excelics  
DATA SHEET  
Low Distortion GaAs Power FET  
44  
19  
NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE  
+22.0dBm TYPICAL OUTPUT POWER  
8.0dB TYPICAL POWER GAIN AT 12GHz  
0.3 X 400 MICRON RECESSED “MUSHROOM” GATE  
Si3N4 PASSIVATION  
ADVANCED EPITAXIAL DOPING PROFILE  
PROVIDES HIGH POWER EFFICIENCY,  
LINEARITY AND RELIABILITY  
20  
4
D
G
S
S
All Dimensions In mils.  
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)  
SYMBOLS  
PARAMETERS/TEST CONDITIONS  
MIN TYP MAX UNIT  
Output Power at 1dB Compression  
Vds=6V, Ids=50% Idss  
Gain at 1dB Compression  
Vds=6V, Ids=50% Idss  
Gain at 1dB Compression  
Vds=6V, Ids=50% Idss  
f=12GHz  
20.0  
22.0  
22.0  
8.0  
P1dB  
dBm  
dB  
f=18GHz  
f=12GHz  
f=18GHz  
6.5  
G1dB  
PAE  
5.0  
%
f=12GHz  
33  
Idss  
Gm  
Saturated Drain Current Vds=3V, Vgs=0V  
60  
45  
105  
160  
-3.5  
mA  
mS  
V
Transconductance  
Pinch-off Voltage  
Vds=3V, Vgs=0V  
60  
-2.0  
-15  
Vp  
Vds=3V, Ids=1.0 mA  
BVgd  
BVgs  
Rth  
Drain Breakdown Voltage Igd=1.0mA  
Source Breakdown Voltage Igs=1.0mA  
Thermal Resistance  
-10  
-6  
V
-14  
V
250*  
oC/W  
* Overall Rth depends on case mounting.  
MAXIMUM RATINGS AT 25OC  
SYMBOLS  
PARAMETERS  
Drain-Source Voltage  
Gate-Source Voltage  
Drain Current  
ABSOLUTE1  
10V  
CONTINUOUS2  
Vds  
Vgs  
Ids  
6V  
-6V  
-4V  
Idss  
75mA  
Igsf  
Pin  
Tch  
Tstg  
Pt  
Forward Gate Current  
Input Power  
10mA  
1.5mA  
21dBm  
175oC  
-65/175oC  
@ 3dB Compression  
150 oC  
Channel Temperature  
Storage Temperature  
Total Power Dissipation  
-65/150 oC  
550mW  
445mW  
Note: 1 Exceeding any of the above ratings may result in permanent damage.  
2. Exceeding any of the above ratings may reduce MTTF below design goals.  
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054  
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com  
EFA040A-70  
DATA SHEET  
Low Distortion GaAs Power FET  
S-PARAMETERS  
6V, 1/2 Idss  
FREQ  
--- S11 ---  
--- S21 ---  
--- S12 ---  
--- S22 ---  
(GHz) MAG ANG  
1.0 0.971 -30.2  
2.0 0.908 -59.1  
3.0 0.842 -84.8  
4.0 0.782 -109.8  
5.0 0.726 -133.4  
6.0 0.686 -152.0  
7.0 0.652 -172.6  
8.0 0.626 167.7  
9.0 0.631 140.1  
10.0 0.652 117.8  
11.0 0.659 103.2  
MAG ANG  
4.747 154.4  
4.348 130.0  
3.860 108.4  
MAG ANG MAG  
ANG  
-14.0  
-29.1  
-42.1  
-52.4  
-62.1  
-74.9  
-86.4  
-96.6  
0.021  
0.037  
0.047  
0.052  
0.055  
0.055  
0.055  
0.054  
0.057  
0.063  
0.073  
0.083  
0.088  
72.3 0.714  
55.5 0.681  
42.9 0.651  
33.0 0.626  
24.9 0.592  
20.6 0.558  
16.8 0.543  
16.2 0.517  
17.8 0.511 -104.6  
14.5 0.497 -118.4  
9.8 0.485 -137.9  
2.8 0.480 -157.0  
-6.5 0.463 -173.7  
3.516  
3.212  
2.939  
2.687  
2.492  
2.292  
88.8  
70.4  
53.7  
37.1  
21.4  
4.2  
2.096 -12.5  
2.002 -28.6  
1.899 -45.5  
1.706 -61.4  
1.513 -76.5  
1.400 -94.1  
1.269 -113.2  
1.103 -126.3  
1.043 -138.6  
0.928 -155.5  
0.854 -171.7  
0.801 173.6  
0.760 160.1  
0.695 142.7  
0.633 124.1  
0.617 107.6  
12.0 0.681  
13.0 0.739  
14.0 0.776  
15.0 0.787  
16.0 0.798  
17.0 0.789  
18.0 0.803  
19.0 0.821  
86.0  
69.3  
55.3  
41.1  
25.7  
15.5  
7.3  
0.091 -16.1 0.465  
0.095 -29.4 0.498  
0.094 -44.6 0.518  
0.092 -50.4 0.516  
0.101 -67.9 0.574  
0.085 -83.5 0.604  
0.080 -98.6 0.657  
0.076 -113.9 0.654  
0.076 -129.4 0.650  
0.075 -147.4 0.629  
0.078 -168.0 0.617  
0.089 176.3 0.618  
0.117 161.8 0.599  
168.8  
144.8  
120.3  
105.9  
93.1  
75.9  
59.9  
47.1  
38.6  
20.9  
0.1  
-7.7  
20.0 0.846 -19.7  
21.0 0.829 -28.2  
22.0 0.795 -39.9  
23.0 0.808 -56.6  
24.0 0.819 -69.7  
25.0 0.756 -84.3  
26.0 0.754 -103.8  
-14.7  
-30.8  
0.634  
90.8  

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