EFA080A-100F [ETC]

Low Distortion GaAs Power FET; 低失真功率的GaAs FET
EFA080A-100F
型号: EFA080A-100F
厂家: ETC    ETC
描述:

Low Distortion GaAs Power FET
低失真功率的GaAs FET

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中文:  中文翻译
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EFA080A-100F  
Excelics  
DATA SHEET  
Low Distortion GaAs Power FET  
HERMETIC 100mil CERAMIC FLANGE PACKAGE  
+26.0dBm TYPICAL OUTPUT POWER  
7.5dB TYPICAL POWER GAIN AT 12GHz  
0.3 X 800 MICRON RECESSED “MUSHROOM”  
GATE  
Si3N4 PASSIVATION  
ADVANCED EPITAXIAL DOPING PROFILE  
PROVIDES HIGH POWER EFFICIENCY,  
LINEARITY AND RELIABILITY  
All Dimensions In mils  
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)  
SYMBOLS  
PARAMETERS/TEST CONDITIONS  
MIN TYP MAX UNIT  
Output Power at 1dB Compression  
Vds=8V, Ids=50% Idss  
Gain at 1dB Compression  
Vds=8V, Ids=50% Idss  
Power Added Efficiency at 1dB Compression  
Vds=8V, Ids=50% Idss  
f=12GHz  
dBm  
P1dB  
24.0  
6.0  
26.0  
7.5  
32  
f=12GHz  
dB  
%
G1dB  
PAE  
f=12GHz  
Saturated Drain Current Vds=3V, Vgs=0V  
130  
90  
210  
120  
-2.0  
-15  
-14  
58*  
300  
-3.5  
mA  
mS  
V
Idss  
Gm  
Transconductance  
Pinch-off Voltage  
Vds=3V, Vgs=0V  
Vds=3V, Ids=2.0mA  
Vp  
Drain Breakdown Voltage Igd=1.0mA  
Source Breakdown Voltage Igs=1.0mA  
Thermal Resistance  
-12  
-7  
V
BVgd  
BVgs  
Rth  
V
oC/W  
* Overall Rth depends on case mounting.  
MAXIMUM RATINGS AT 25OC  
SYMBOLS  
PARAMETERS  
Drain-Source Voltage  
Gate-Source Voltage  
Drain Current  
ABSOLUTE1  
12V  
CONTINUOUS2  
8V  
Vds  
Vgs  
Ids  
-8V  
-4V  
Idss  
250mA  
Forward Gate Current  
Input Power  
20mA  
4mA  
Igsf  
Pin  
Tch  
Tstg  
Pt  
25dBm  
175oC  
-65/175oC  
@ 3dB Compression  
150oC  
-65/150oC  
Channel Temperature  
Storage Temperature  
Total Power Dissipation  
2.5 W  
2.0W  
Note: 1. Exceeding any of the above ratings may result in permanent damage.  
2. Exceeding any of the above ratings may reduce MTTF below design goals.  
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054  
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com  
EFA080A-100F  
DATA SHEET  
Low Distortion GaAs Power FET  
S-PARAMETERS  
8V, 1/2 Idss  
FREQ  
--- S11 ---  
--- S21 ---  
--- S12 ---  
--- S22 ---  
(GHz) MAG ANG MAG ANG MAG ANG MAG  
ANG  
-32.8  
-53.9  
-68.6  
-80.0  
-89.3  
1.0 0.959 -47.5 6.007 149.5 0.028  
2.0 0.898 -81.6 5.050 119.7 0.042  
54.7 0.450  
38.4 0.446  
26.7 0.442  
17.3 0.442  
8.8 0.426  
3.0 0.854 -104.9 4.182  
4.0 0.817 -126.2 3.635  
5.0 0.785 -147.2 3.268  
6.0 0.761 -163.3 2.964  
7.0 0.738 179.2 2.690  
8.0 0.718 163.2 2.414  
97.3 0.050  
78.0 0.054  
59.5 0.059  
42.1 0.063  
24.1 0.065  
1.0 0.378 -104.4  
-8.3 0.357 -124.2  
6.9 0.064 -16.5 0.366 -145.0  
9.0 0.731 140.3 2.132 -10.6 0.064 -24.6 0.395 -150.2  
10.0 0.753 125.5 1.913 -26.3 0.067 -31.4 0.401 -158.8  
11.0 0.742 121.7 1.826 -41.3 0.074 -39.8 0.403 178.4  
12.0 0.707 115.5 1.752 -56.8 0.083 -47.6 0.430 162.0  
13.0 0.709  
14.0 0.708  
15.0 0.680  
16.0 0.658  
17.0 0.664  
18.0 0.654  
19.0 0.623  
20.0 0.697  
96.7 1.655 -72.8 0.093 -57.3 0.425 160.0  
77.6 1.567 -90.4 0.106 -69.1 0.375 151.1  
65.4 1.509 -110.8 0.125 -85.0 0.394 120.4  
53.2 1.419 -130.8 0.144 -99.9 0.436 102.6  
42.2 1.354 -148.0 0.173 -111.8 0.430 103.8  
33.6 1.316 -167.6 0.223 -127.5 0.436  
26.4 1.216 171.4 0.277 -146.8 0.500  
15.6 1.201 151.3 0.380 -167.1 0.566  
97.7  
80.0  
72.0  

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