EFA080A-70 [EXCELICS]

Low Distortion GaAs Power FET; 低失真功率的GaAs FET
EFA080A-70
型号: EFA080A-70
厂家: EXCELICS SEMICONDUCTOR, INC.    EXCELICS SEMICONDUCTOR, INC.
描述:

Low Distortion GaAs Power FET
低失真功率的GaAs FET

文件: 总2页 (文件大小:23K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
EFA080A-70  
Excelics  
DATA SHEET  
Low Distortion GaAs Power FET  
44  
19  
NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE  
+23.5dBm TYPICAL OUTPUT POWER  
7.0 dB TYPICAL POWER GAIN AT 12GHz  
0.3 X 800 MICRON RECESSED “MUSHROOM” GATE  
Si3N4 PASSIVATION  
ADVANCED EPITAXIAL DOPING PROFILE  
PROVIDES HIGH POWER EFFICIENCY,  
LINEARITY AND RELIABILITY  
20  
4
D
G
S
S
All Dimensions In mils.  
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)  
SYMBOLS  
PARAMETERS/TEST CONDITIONS  
MIN TYP MAX UNIT  
Output Power at 1dB Compression  
Vds=5V, Ids=50% Idss  
Gain at 1dB Compression  
Vds=5V, Ids=50% Idss  
Power Added Efficiency at 1dB Compression  
Vds=5V, Ids=50% Idss  
f=12GHz  
21.5  
23.5  
23.5  
7.0  
P1dB  
dBm  
dB  
f=18GHz  
f=12GHz  
f=18GHz  
6.0  
G1dB  
PAE  
4.5  
%
f=12GHz  
30  
Idss  
Gm  
Saturated Drain Current Vds=3V, Vgs=0V  
130  
90  
210  
300  
-3.5  
mA  
mS  
V
Transconductance  
Pinch-off Voltage  
Vds=3V, Vgs=0V  
120  
-2.0  
-15  
Vp  
Vds=3V, Ids=2.0mA  
BVgd  
BVgs  
Rth  
Drain Breakdown Voltage Igd=1.0mA  
Source Breakdown Voltage Igs=1.0mA  
Thermal Resistance  
-10  
-6  
V
-14  
V
135*  
oC/W  
* Overall Rth depends on case mounting.  
MAXIMUM RATINGS AT 25OC  
SYMBOLS  
PARAMETERS  
Drain-Source Voltage  
Gate-Source Voltage  
Drain Current  
ABSOLUTE1  
8V  
CONTINUOUS2  
Vds  
Vgs  
Ids  
5V  
-5V  
-4V  
Idss  
185mA  
Igsf  
Pin  
Tch  
Tstg  
Pt  
Forward Gate Current  
Input Power  
20mA  
4mA  
22dBm  
175oC  
-65/175oC  
@ 3dB Compression  
150 oC  
Channel Temperature  
Storage Temperature  
Total Power Dissipation  
-65/150 oC  
1.1W  
0.9W  
Note: 1 Exceeding any of the above ratings may result in permanent damage.  
2. Exceeding any of the above ratings may reduce MTTF below design goals.  
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054  
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com  
EFA080A-70  
DATA SHEET  
Low Distortion GaAs Power FET  
S-PARAMETERS  
8V, 1/2 Idss  
FREQ  
--- S11 ---  
--- S21 ---  
--- S12 ---  
--- S22 ---  
(GHz) MAG ANG  
1.0 0.909 -42.3  
2.0 0.826 -77.0  
3.0 0.766 -104.2  
4.0 0.724 -128.4  
5.0 0.691 -148.9  
6.0 0.672 -163.0  
7.0 0.653 -178.5  
8.0 0.639 167.4  
9.0 0.645 144.9  
10.0 0.658 126.6  
11.0 0.655 116.0  
12.0 0.667 101.8  
MAG ANG  
6.038 146.2  
5.067 118.9  
MAG ANG MAG  
ANG  
-26.1  
-47.4  
-64.2  
-77.3  
-90.8  
0.032  
0.049  
0.059  
0.064  
0.068  
0.072  
0.075  
0.079  
0.087  
0.096  
0.109  
0.124  
59.9 0.452  
45.3 0.405  
33.8 0.383  
26.9 0.366  
21.6 0.338  
18.6 0.317 -108.5  
15.9 0.322 -122.3  
14.7 0.306 -136.5  
11.4 0.308 -148.4  
5.8 0.317 -166.1  
4.189  
3.590  
3.129  
2.766  
2.487  
2.266  
2.073  
96.7  
77.3  
59.7  
44.3  
29.4  
14.8  
-1.1  
1.885 -16.7  
1.793 -31.1  
1.690 -46.7  
1.512 -62.2  
1.334 -76.1  
1.230 -91.4  
1.113 -108.5  
0.951 -120.4  
0.886 -129.9  
0.815 -144.0  
0.742 -158.2  
0.680 -169.6  
0.639 179.7  
0.601 164.5  
0.550 147.3  
0.524 135.1  
0.538 121.1  
-0.3 0.337  
-7.8 0.366  
171.2  
150.2  
131.4  
116.3  
98.5  
78.5  
66.4  
58.5  
45.7  
32.6  
22.4  
15.3  
-0.8  
13.0 0.719  
14.0 0.752  
15.0 0.754  
16.0 0.763  
17.0 0.760  
18.0 0.779  
19.0 0.788  
20.0 0.818  
21.0 0.833  
84.9  
70.5  
57.6  
43.0  
32.5  
25.1  
10.8  
-1.5  
-8.6  
0.133 -17.2 0.387  
0.138 -25.8 0.419  
0.148 -37.2 0.480  
0.152 -49.6 0.527  
0.153 -55.6 0.535  
0.169 -66.8 0.584  
0.166 -77.8 0.627  
0.169 -89.6 0.679  
0.171 -99.0 0.684  
0.181 -108.3 0.671  
0.188 -122.5 0.659  
0.191 -139.2 0.662  
0.202 -151.7 0.666  
0.236 -164.9 0.639  
22.0 0.808 -17.7  
23.0 0.803 -34.1  
24.0 0.820 -48.4  
25.0 0.788 -59.1  
26.0 0.782 -73.7  
-20.3  
-31.0  
-45.2  

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