EFA060B-70 [EXCELICS]
Low Distortion GaAs Power FET; 低失真功率的GaAs FET
| 型号： | EFA060B-70 |
| 厂家： | 
EXCELICS SEMICONDUCTOR, INC. |
| 描述： | Low Distortion GaAs Power FET |
| 文件： | 总2页 (文件大小：23K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EFA060B-70
Excelics
DATA SHEET
Low Distortion GaAs Power FET
44
19
•
•
•
•
•
•
NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE
+24.0dBm TYPICAL OUTPUT POWER
7.5 dB TYPICAL POWER GAIN AT 12GHz
0.3 X 600 MICRON RECESSED “MUSHROOM” GATE
Si3N4 PASSIVATION
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
20
4
D
G
S
S
All Dimensions In mils.
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS
PARAMETERS/TEST CONDITIONS
MIN TYP MAX UNIT
Output Power at 1dB Compression
Vds=6V, Ids=50% Idss
Gain at 1dB Compression
Vds=6V, Ids=50% Idss
Power Added Efficiency at 1dB Compression
Vds=6V, Ids=50% Idss
f=12GHz
22.0
24.0
24.0
7.5
P1dB
dBm
dB
f=18GHz
f=12GHz
f=18GHz
6.0
G1dB
PAE
5.0
%
f=12GHz
33
Idss
Gm
Saturated Drain Current Vds=3V, Vgs=0V
100
70
170
240
-3.5
mA
mS
V
Transconductance
Pinch-off Voltage
Vds=3V, Vgs=0V
90
-2.0
-15
Vp
Vds=3V, Ids=1.5mA
BVgd
BVgs
Rth
Drain Breakdown Voltage Igd=1.0mA
Source Breakdown Voltage Igs=1.0mA
Thermal Resistance
-10
-6
V
-14
V
175*
oC/W
* Overall Rth depends on case mounting.
MAXIMUM RATINGS AT 25OC
SYMBOLS
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
ABSOLUTE1
10V
CONTINUOUS2
6V
Vds
Vgs
Ids
-6V
-4V
Idss
110mA
Igsf
Pin
Tch
Tstg
Pt
Forward Gate Current
Input Power
15mA
2.5mA
22dBm
175oC
-65/175oC
@ 3dB Compression
150 oC
Channel Temperature
Storage Temperature
Total Power Dissipation
-65/150 oC
780mW
650mW
Note: 1 Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
EFA060B-70
DATA SHEET
Low Distortion GaAs Power FET
S-PARAMETERS
6V, 1/2 Idss
FREQ
--- S11 ---
--- S21 ---
--- S12 ---
--- S22 ---
(GHz) MAG ANG
1.0 0.959 -36.8
2.0 0.881 -70.5
3.0 0.810 -99.4
4.0 0.753 -126.7
5.0 0.712 -151.3
6.0 0.687 -169.6
7.0 0.669 170.6
8.0 0.660 152.5
9.0 0.676 127.8
10.0 0.701 108.4
MAG ANG
5.607 150.2
4.945 123.1
4.231 100.1
MAG ANG MAG
ANG
-15.7
-31.5
-44.6
-54.8
-64.9
-78.2
-90.3
0.021
0.036
0.044
0.046
0.048
0.050
0.052
0.055
0.064
0.074
0.087
0.100
0.107
69.7 0.673
52.6 0.632
41.1 0.600
32.4 0.577
28.1 0.546
27.6 0.516
27.4 0.508
30.2 0.490 -101.7
29.7 0.490 -111.1
23.8 0.482 -126.3
16.1 0.478 -147.5
6.7 0.485 -168.1
3.718
3.295
2.954
2.667
2.440
2.207
79.4
60.6
43.8
27.3
11.7
-5.2
2.002 -21.9
1.914 -38.1
1.812 -55.4
1.623 -71.5
1.436 -86.6
1.325 -104.7
1.192 -124.5
1.036 -138.3
0.978 -151.3
0.870 -168.6
0.793 174.4
0.737 158.8
0.703 144.6
0.636 126.3
0.563 107.3
11.0 0.712
12.0 0.734
13.0 0.786
14.0 0.814
15.0 0.822
16.0 0.827
17.0 0.815
18.0 0.824
95.0
79.3
64.1
50.9
36.8
21.3
10.9
2.0
-4.6 0.477
173.7
155.8
132.1
107.3
92.5
79.4
62.6
45.8
32.5
22.7
3.5
0.108 -14.9 0.486
0.113 -29.1 0.532
0.113 -45.2 0.560
0.111 -52.3 0.563
0.119 -69.9 0.622
0.103 -84.5 0.654
0.098 -99.1 0.709
0.095 -113.3 0.716
0.099 -127.5 0.707
0.099 -145.0 0.692
0.104 -163.0 0.696
0.119 -179.7 0.727
0.149 163.3 0.710
19.0 0.842 -12.9
20.0 0.865 -25.0
21.0 0.837 -34.9
22.0 0.803 -48.2
23.0 0.828 -65.6
24.0 0.832 -79.0
25.0 0.762 -97.6
26.0 0.779 -120.5
-18.6
-31.7
-48.8
0.529
0.523
90.4
72.5
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