EFA080A [EXCELICS]
Low Distortion GaAs Power FET; 低失真功率的GaAs FET
| 型号： | EFA080A |
| 厂家： | 
EXCELICS SEMICONDUCTOR, INC. |
| 描述： | Low Distortion GaAs Power FET |
| 文件： | 总2页 (文件大小：33K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EFA080A
Excelics
DATA SHEET
Low Distortion GaAs Power FET
510
•
•
•
•
•
+26.0dBm TYPICAL OUTPUT POWER
10.0dB TYPICAL POWER GAIN AT 12GHz
50 116
0.3 X 800 MICRON RECESSED “MUSHROOM” GATE
Si3N4 PASSIVATION
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
48
D
G
D
G
340
100
40
S
S
S
•
Idss SORTED IN 15mA PER BIN RANGE
95
50 80
Chip Thickness: 75 ± 13 microns
All Dimensions In Microns
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS
P1dB
PARAMETERS/TEST CONDITIONS
MIN TYP MAX UNIT
Output Power at 1dB Compression
Vds=8V, Ids=50% Idss
Gain at 1dB Compression
Vds=8V, Ids=50% Idss
f=12GHz
24.0
26.0
26.0
10.0
7.5
dBm
dB
f=18GHz
f=12GHz
f=18GHz
8.0
G1dB
PAE
Power Added Efficiency at 1dB Compression
%
Vds=8V, Ids=50% Idss
f=12GHz
35
Idss
Gm
Saturated Drain Current Vds=3V, Vgs=0V
130
90
210
300
-3.5
mA
mS
V
Transconductance
Pinch-off Voltage
Vds=3V, Vgs=0V
120
-2.0
-15
-14
55
Vp
Vds=3V, Ids=2.0mA
BVgd
BVgs
Rth
Drain Breakdown Voltage Igd=1.0mA
Source Breakdown Voltage Igs=1.0mA
Thermal Resistance (Au-Sn Eutectic Attach)
-12
-7
V
V
oC/W
MAXIMUM RATINGS AT 25OC
SYMBOLS
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
ABSOLUTE1
12V
CONTINUOUS2
8V
Vds
Vgs
Ids
-8V
-4V
Idss
260mA
Igsf
Pin
Tch
Tstg
Pt
Forward Gate Current
Input Power
20mA
4mA
25dBm
175oC
-65/175oC
@ 3dB Compression
150oC
-65/150oC
Channel Temperature
Storage Temperature
Total Power Dissipation
2.5 W
2.1 W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
EFA080A
DATA SHEET
Low Distortion GaAs Power FET
S-PARAMETERS
8V, 1/2 Idss
FREQ
--- S11 ---
--- S21 ---
--- S12 ---
--- S22 ---
(GHz) MAG ANG MAG ANG MAG ANG MAG ANG
1.0 0.983 -38.9 6.602 158.2 0.029
2.0 0.949 -71.6 5.927 135.8 0.050
3.0 0.916 -96.5 4.998 118.0 0.061
4.0 0.894 -115.4 4.191 104.1 0.066
65.4 0.421 -24.5
49.2 0.380 -45.7
36.4 0.343 -62.4
27.2 0.326 -75.6
19.6 0.327 -87.3
14.5 0.339 -95.6
10.3 0.359 -102.4
7.4 0.382 -107.5
3.8 0.408 -111.9
3.0 0.433 -115.1
1.8 0.457 -118.4
1.0 0.478 -121.4
-0.9 0.495 -124.4
-2.3 0.511 -127.6
-2.9 0.522 -131.2
-4.6 0.532 -135.3
-5.7 0.542 -140.3
-7.1 0.557 -145.3
-8.0 0.568 -151.5
-9.8 0.585 -157.6
-9.0 0.627 -165.3
-9.5 0.650 -170.5
-7.8 0.680 -174.4
-5.4 0.706 -177.2
-3.9 0.728 -179.7
0.4 0.753 179.1
5.0 0.879 -130.5 3.536
6.0 0.873 -140.5 3.028
7.0 0.871 -148.3 2.628
8.0 0.869 -154.1 2.311
9.0 0.872 -158.8 2.058
10.0 0.872 -162.7 1.857
11.0 0.873 -166.5 1.689
12.0 0.876 -169.7 1.557
13.0 0.879 -173.3 1.446
14.0 0.880 -177.4 1.356
15.0 0.882 178.3 1.276
16.0 0.886 173.2 1.207
17.0 0.889 168.2 1.141
18.0 0.892 162.8 1.075
19.0 0.897 157.9 1.010
20.0 0.905 153.4 0.949
21.0 0.923 152.7 0.829
92.2 0.068
82.8 0.069
74.6 0.068
67.5 0.067
61.1 0.065
55.2 0.063
49.5 0.061
43.9 0.060
38.4 0.058
32.9 0.059
27.2 0.057
20.9 0.057
14.6 0.057
8.3 0.058
1.7 0.057
-4.6 0.057
-9.6 0.053
22.0 0.928 150.2 0.769 -14.6 0.053
23.0 0.936 147.8 0.713 -19.7 0.052
24.0 0.939 146.5 0.664 -23.8 0.052
25.0 0.945 145.2 0.624 -27.3 0.053
26.0 0.944 144.7 0.592 -30.4 0.053
Note: The data included 0.7 mils diameter Au bonding wires:
2 gate wires, 15 mils each; 2 drain wires, 20 mils each; 6 source wires, 7 mils each.
相关型号：
©2020 ICPDF网 联系我们和版权申明