EFA040A [EXCELICS]
Low Distortion GaAs Power FET; 低失真功率的GaAs FET
| 型号： | EFA040A |
| 厂家： | 
EXCELICS SEMICONDUCTOR, INC. |
| 描述： | Low Distortion GaAs Power FET |
| 文件： | 总2页 (文件大小：33K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EFA040A
Excelics
DATA SHEET
Low Distortion GaAs Power FET
•
•
•
•
•
+23.0dBm TYPICAL OUTPUT POWER
10.5 dB TYPICAL POWER GAIN AT 12GHz
0.3 X 400 MICRON RECESSED “MUSHROOM” GATE
Si3N4 PASSIVATION
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
•
Idss SORTED IN 10mA PER BIN RANGE
±
Chip Thickness: 75 13 microns
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
All Dimensions In Microns
SYMBOLS
PARAMETERS/TEST CONDITIONS
MIN TYP MAX UNIT
Output Power at 1dB Compression
Vds=8V, Ids=50% Idss
Gain at 1dB Compression
Vds=8V, Ids=50% Idss
Gain at 1dB Compression
Vds=8V, Ids=50% Idss
f=12GHz
21.0
23.0
23.0
10.5
8.0
dBm
dB
P1dB
f=18GHz
f=12GHz
f=18GHz
9.0
G1dB
PAE
%
f=12GHz
35
Saturated Drain Current Vds=3V, Vgs=0V
60
45
105
160
-3.5
mA
mS
V
Idss
Gm
Transconductance
Pinch-off Voltage
Vds=3V, Vgs=0V
60
-2.0
-15
-14
105
Vds=3V, Ids=1.0 mA
Vp
Drain Breakdown Voltage Igd=1.0mA
Source Breakdown Voltage Igs=1.0mA
Thermal Resistance (Au-Sn Eutectic Attach)
-12
-7
V
BVgd
BVgs
Rth
V
oC/W
MAXIMUM RATINGS AT 25OC
SYMBOLS
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
ABSOLUTE1
12V
CONTINUOUS2
8V
Vds
Vgs
Ids
-8V
-4V
Idss
135mA
Forward Gate Current
Input Power
10mA
2mA
Igsf
Pin
Tch
Tstg
Pt
22dBm
175oC
-65/175oC
@ 3dB Compression
150oC
-65/150oC
Channel Temperature
Storage Temperature
Total Power Dissipation
1.3W
1.1W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
EFA040A
DATA SHEET
Low Distortion GaAs Power FET
S-PARAMETERS
8V, 1/2 Idss
--- S21 ---
FREQ
--- S11 ---
--- S12 ---
--- S22 ---
(GHz) MAG ANG
1.0 0.989 -21.4
2.0 0.970 -41.5
3.0 0.942 -60.3
4.0 0.915 -77.6
5.0 0.888 -94.0
6.0 0.870 -107.0
7.0 0.856 -118.1
8.0 0.846 -127.2
9.0 0.840 -135.1
10.0 0.834 -142.0
11.0 0.833 -148.6
12.0 0.829 -154.2
13.0 0.828 -160.2
14.0 0.826 -166.5
15.0 0.823 -173.0
16.0 0.824 180.0
17.0 0.823 172.7
18.0 0.822 165.6
19.0 0.824 159.0
20.0 0.827 153.0
21.0 0.845 151.3
22.0 0.853 148.1
23.0 0.859 145.0
24.0 0.862 143.0
25.0 0.870 141.1
26.0 0.866 139.5
MAG ANG
4.677 163.5
4.457 149.3
4.164 135.7
3.845 123.2
3.529 111.1
3.204 100.9
MAG ANG MAG
ANG
-7.4
0.019
0.036
0.049
0.060
0.068
0.072
0.075
0.077
0.078
0.077
0.078
0.078
0.078
0.079
0.079
0.080
0.082
78.1 0.665
67.0 0.646
56.3 0.615
47.3 0.584
38.6 0.550
32.1 0.526
27.0 0.508
21.2 0.496
16.6 0.487
13.1 0.482
10.0 0.478
6.9 0.476
3.7 0.471
1.1 0.465
-1.5 0.457
-4.8 0.446
-15.3
-22.4
-29.1
-36.2
-42.3
-48.4
-54.3
-60.1
-65.4
-70.9
-76.3
-81.7
-86.7
-92.5
-98.7
2.914
2.663
2.442
2.258
2.115
1.985
1.880
1.799
1.721
1.652
1.583
1.510
1.436
1.358
1.218
91.6
83.2
75.5
68.4
61.5
54.8
48.1
41.4
34.6
27.4
19.9
12.5
5.0
-7.8 0.434 -106.0
0.082 -10.9 0.422 -114.2
0.082 -13.6 0.412 -123.8
0.083 -16.4 0.409 -134.1
0.078 -18.8 0.445 -148.8
0.076 -20.1 0.467 -158.9
0.076 -19.7 0.496 -166.3
0.073 -20.1 0.533 -173.2
0.074 -18.3 0.565 -179.5
-2.3
-8.6
1.144 -14.9
1.073 -20.7
1.012 -26.4
0.965 -31.9
0.915 -36.9
0.074 -17.5 0.595
176.0
Note:
The data included 0.7 mils diameter Au bonding wires:
1 gate wires, 15 mils each; 1 drain wires, 20 mils each; 4 source wires, 7 mils each.
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