Q62702G0058 [ETC]
TRANSISTOR R.F SOT363 ; 晶体管R.F SOT363\n
| 型号： | Q62702G0058 |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR R.F SOT363
|
| 文件： | 总8页 (文件大小：84K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BGA 425
Si-MMIC-Amplifier
Preliminary data
in SIEGET 25-Technologie
3
• Multifunctional casc. 50 Ω block (LNA / MIX)
4
• Unconditionally stable
2
• Gain |S | = 18.5 dB at 1.8 GHz (appl.1)
21
2
gain |S | = 22 dB at 1.8 GHz (appl.2)
21
2
IP
= +7 dBm at 1.8 GHz (V =3V,I =9.5mA)
D D
3out
VPS05605
1
• Noise figure NF = 2.2 dB at 1.8 GHz
• Reverse isolation >28 dB (appl.1) >35 dB (appl.2)
Circuit Diagram
• typical device voltage V = 2 V to 5 V
D
6
+V
Tape loading orientation
3
OUTA
1
OUTB
4
IN
2, 5
GND
EHA07371
ESD: Electrostatic discharge sensitive device,
observe handling precaution!
PIN Configuration
2, GND
Q62702-G0058 SOT-343 4, IN 5, GND
Type
Marking Ordering Code Package 1, Out B
3, Out A
6, +V
BGA 425 BMs
Maximum Ratings
Parameter
Symbol
Value
Unit
mA
V
Device current
Device voltage
25
6
I
D
V ,+V
D
150
mW
dBm
°C
Total power dissipation, T ≤ tbd °C
P
P
T
T
T
tot
RFin
j
S
-10
R input power
F
Junction temperature
Ambient temperature
Storage temperature
150
-65 ...+150
-65 ...+150
A
stg
Thermal Resistance
1)
Junction - soldering point
K/W
R
≤ tbd
thJS
1) T is measured on the ground lead at the soldering point to the pcb
S
Semiconductor Group
1
Jul-14-1998
1998-11-01
Semiconductor Group
1
BGA 425
Electrical Characteristics at T = 25 °C, unless otherwise specified.
A
Parameter
Symbol
Values
typ. max.
Unit
min.
AC characteristics V = 3V, Z = 50Ω, Testfixture Appl.1
D
o
Device current
8.5
9.5
10.5 mA
I
D
2
dB
Insertion power gain
f = 0.1 GHz
f = 1 GHz
|S |
21
-
-
-
-
27
22
-
-
f = 1.8 GHz
Reverse isolation
f = 1.8 GHz
Noise figure
f = 0.1 GHz
f = 1 GHz
18.5
28
-
-
S12
NF
-
-
-
-
1.9
2
-
-
f = 1.8 GHz
2.2
+ 7
-
-
-
-
dBm
dB
Intercept point at the output
f = 1.8 GHz
IP
3out
-
-
>13
>7
Return loss input
f = 1.8 GHz
RL
RL
in
Return loss output
f = 1.8 GHz
out
Semiconductor Group
Semiconductor Group
2
Jul-14-1998
1998-11-01
2
BGA 425
Typical configuration
Application 1 - 3 (LNA)
Application 4 (Mix)
Appl.1
Appl.2
100 pF
2.2 pF
RF OUT
BGA 425
BGA 425
100 pF
100 pF
100 pF
RF OUT
RF IN
RF IN
100 nH
10 nF
100 pF
+3 V
10 nF
100 pF
EHA07372
+3 V
EHA07373
Appl.3
Appl.4
100 pF
100 pF
1 nF
47 pF
22 nH
RF OUT
LO
33 Ω
BGA 425
BGA 425
47 pF
100 pF
100 pF
IF
RF IN
RF
10 nF
100 pF
180 nH
+3 V
EHA07374
10 nF
100 pF
+V
EHA07375
Note: 1) Large-value capacitors should be connected from pin 6 to ground right at the device
to provide a low impedance path! (appl. 1)
2) The use of plated through holes right at pin 2 and 5 is essential for pc-board-applications.
Thin boards are recommended to minimize the parasitic inductance to ground!
3) For more information please see application note 028 and 030.
Semiconductor Group
Semiconductor Group
3
Jul-14-1998
1998-11-01
3
BGA 425
Electrical characteristics at T = 25 °C, unless otherwise specified.
A
VD = 3 V
Application 1 to 4
Applic.
Insertion Gain
2
Noise Figure Reverse Isol.
NF (dB) S12 (dB)
Frequ. (GHz) Frequ. (GHz)
1.8 0.1 1 1.8 0.1 1
2.2 46 32 28 19 19 18 10
Return Loss
Return Loss
|S | (dB)
21
Input RL (dB) Output RL
(dB)
out
in
Frequ. (GHz)
Frequ. (GHz)
Frequ. (GHz)
0.1
1
1.8 0.1 1
18.5 1.9 2
1.8 0.1
1
1.8
1 (LNA) 27 22
2 (LNA) 10 22
3 (LNA) 24 20
4 (MIX)
12
13
11
11
*)
22
-
1.9 2.1 35 35 37 13 15
8
5
10
17
16 1.9 2
2.2 34 30 26
8
10 14 15
e.g.: RF = 900 MHz, IF = 100 MHz, VD = 3 V
Conversion gain: 20 dB
Intercept point output: 0 dBm
Noise figure: < 5 dB
LO-power: +3 dBm
*) 2.2 pF by-pass capacitance and 100 nH bias-inductance
Semiconductor Group
Semiconductor Group
4
Jul-14-1998
1998-11-01
4
BGA 425
For linear simulation please use on-wafer measurement data of our T501 chip an add
resistive and capacitive elements, parasitics and package equivalent circuit.
S-Parameters at T = 25 °C (On-wafer measurement data T501)
A
f
S
S
S
S
22
11
21
12
GHz
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
T1, V = 1.7 V, I = 4.7 mA
CE
C
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
1.7
1.9
2.1
2.3
2.5
2.7
2.9
3.1
0.7996
-8
11.8466 172.4
11.9814 169
0.0111
0.0126
0.0163
0.019
118
90.9
75.9
72.4
64.7
62.4
58.2
54
49.3
45.6
44.1
41.6
40.8
40
0.9942
0.9853
0.9675
0.9529
0.9286
0.9094
0.8842
0.8523
0.8221
0.7939
0.7721
0.7476
0.7339
0.716
0
-5.7
-9.6
0.8223
0.8294
0.8162
0.81
-15.5
-26.3
-34.4
-44.5
-52.8
-61.8
-69.1
-75.9
-81.8
-88.4
-96
11.9702 162.6
11.4624 156.8
11.1452 149.5
10.739 144.6
10.3219 138.9
-13.5
-17.2
-20.4
-23.5
-25.9
-28.2
-30.2
-32.7
-34.5
-35.7
-37.3
-38.6
-39.7
0.0208
0.0281
0.0332
0.0373
0.0383
0.0404
0.0417
0.0451
0.0465
0.049
0.793
0.7884
0.7651
0.7534
0.74
0.7391
0.7335
0.7186
0.7193
0.702
9.7368
9.3137 130.2
8.8247 126
8.4426 121.9
8.089 118
134
-98.4
-103.1
-108
7.6674 115.5
7.3034 113.2
6.7988 109.9
6.4921 107.4
0.0492
0.0501
37
36.7
0.6885
0.6743
0.6897
-112.6
T2, V
= 2.2 V, I = 4.7 mA
C
CE
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
1.7
1.9
2.1
2.3
2.5
2.7
2.9
3.1
0.8144
0.8094
0.8251
0.8171
0.7957
0.7952
0.7953
0.767
0.7618
0.7384
0.739
0.7285
0.718
-8.3
-15.3
-25.8
-34.4
-44.9
-52.5
-61.9
-68.6
-75.5
-81.3
-88.7
-95.8
-97.9
-102.9
-107.8
-111.9
11.9941
12.1389
12.1376
11.6229
11.3048
10.8874
10.4735
9.8866
9.4501
8.9757
8.5788
8.2231
7.7991
7.429
172.1
169
162.7
157
0.0154
0.01
129.2
80.7
76.3
70.8
70.7
64.2
60.7
54
0.985
0.9906
0.9728
0.9557
0.9375
0.9147
0.8916
0.8595
0.8322
0.8019
0.7857
0.7625
0.7467
0.7273
0.7077
0.689
-0.5
-5.6
-0.1
0.0129
0.0183
0.0227
0.0261
0.0307
0.0325
0.0361
0.0374
0.04
0.0416
0.0463
0.043
0.0468
0.0481
-12.7
-16
-19
149.7
144.8
139.2
134.3
130.5
126.3
122.1
118.2
115.5
113.4
110
-22.4
-24.5
-26.6
-28.6
-30.9
-32.9
-33.7
-35.8
-36.7
-37.6
48
49.2
44.3
39.7
40.4
38.8
35.7
34.2
0.7294
0.6955
0.6868
6.9444
6.6064
107.6
Semiconductor Group
Semiconductor Group
5
Jul-14-1998
1998-11-01
5
BGA 425
Spice model
T1
T2
T501
T501
+V
BGA 425-chip
including parasitics
16
R
14.5kΩ
280Ω
2.4kΩ
170Ω
22Ω
1
11
13
OUTB
OUTA
R
2
R
3
R2
R5
R
4
T2
R
5
R1
R3
C’-E’-
Diode
R
1kΩ
P1
2.3pF
0.2pF
0.2pF
0.6pF
C
1
C1
C
P1
14
CP3
CP4
CP5
R4
RF IN
T1
C
P2
CP1
CP2
C
P3
0.1pF
0.1pF
C
12, 15
GND
P4
C
EHA07376
P5
C’-E’-diode T1
Semiconductor Group
Semiconductor Group
6
Jul-14-1998
1998-11-01
6
BGA 425
Transistor Chip Data T1 (Berkley-SPICE 2G.6 Syntax) :
IS =
0.21024
39.251
1.7763
34.368
1.3152
1.3491
3.7265
4.5899
1.3364
0.99532
1.4935
0
aA
V
-
BF =
83.23
0.16493
10.526
0.25052
15
-
NF =
1.0405
15.761
-
VAF =
NE =
IKF =
BR =
IKR =
RB =
A
-
ISE =
NR =
ISC =
IRB =
RC =
fA
0.96647
-
VAR =
NC =
RBM =
CJE =
TF =
V
-
A
0.037223 fA
0.21215
0.12691
0.37747
0.19762
96.941
mA
Ω
RE =
1.9289
0.70367
0.3641
0
Ω
fF
ps
mA
V
Ω
-
VJE =
XTF =
PTF =
MJC =
CJS =
XTB =
FC =
V
MJE =
VTF =
CJC =
-
V
fF
-
ITF =
VJC =
TR =
deg
0.48652
0
-
XCJC = 0.08161
ns
-
fF
-
VJS =
EG =
TNOM
0.75
1.11
300
V
eV
K
MJS =
XTI =
0
3
-
0.99469
-
C’-E’-Diode Data (Berkley-SPICE 2G.6 Syntax) :
IS = fA N = 1.02
2
-
RS =
20
Ω
All parameters are ready to use, no scaling is necessary
Package Equivalent Circuit:
C12
L
L
L
L
=
=
0.4
0.7
0.3
0.3
0.3
0.1
0.4
0.4
0.3
0.3
200
200
200
200
5
nH
nH
nH
nH
nH
nH
nH
nH
nH
nH
fF
fF
fF
fF
fF
fF
fF
fF
BI1
BI2
=
=
BO1
C21
BO2
L =
EI
L BO2
L BI2
L CI2
L CO2
L
L
L
L
L
C
C
C
C
C
C
C
C
=
=
=
14
16
13
11
EO
CI1
CI2
RF IN
+V
OUTA
OUTB
BGA 425
Chip
C11
C22
L BO1
L BI1
L CI1
L CO1
C’-E’-
Diode
=
=
=
=
=
=
CO1
12, 15
CO2
CBE2
CBE1
CCE1
CCE2
BE1
BE2
CE1
CE2
L EI
L EO
=
=
=
=
11
22
12
EHA07377
GND
5
50
50
Extracted on behalf of SIEMENS Small Signal Semiconductors by
Institut für Mobil-und Satellitentechnik (IMST)
1996 SIEMENS AG
Valid up to 3GHz
For examples and ready to use parameters please contact your local Siemens distributor or salesoffice to
obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm
Semiconductor Group
7
Jul-14-1998
1998-11-01
Semiconductor Group
7
BGA 425
2
Insertion power gain |S | = f (f)
Noise figure NF = f (f)
21
V , I = parameter
V ,I = parameter
D
D
D D
5.0
35
VD=5V, ID=17.5mA
VD=4V, ID=13.3mA
VD=3V, ID=9.5mA
VD=2V, ID=5.2mA
dB
dB
4.0
3.5
3.0
VD=5V, ID=17.5mA
VD=3V, ID=9.5mA
25
20
15
10
5
S
FN
2.5
2.0
1.5
1.0
0.5
0.0
0
10 -1
10 0
10 1
10 -1
10 0
GHz
10 1
GHz
f
f
Intercept point at the output
IP = f (f)
3out
V ,I = parameter
D D
20
VD=5V, ID=17.5mA
dBm
VD=4V, ID=13,3mA
VD=3V, ID=9.5mA
VD=2V, ID=5.2mA
16
14
12
IP
10
8
6
4
2
0
10 -1
10 0
GHz
10 1
f
Semiconductor Group
Semiconductor Group
8
Jul-14-1998
1998-11-01
8
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