Q62702P5053 [OSRAM]
GaAlAs-Lumineszenzdiode (660 nm); GaAlAs的- Lumineszenzdiode （ 660纳米）
| 型号： | Q62702P5053 |
| 厂家： | 
OSRAM GMBH |
| 描述： | GaAlAs-Lumineszenzdiode (660 nm) |
| 文件： | 总7页 (文件大小：149K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GaAlAs-Lumineszenzdiode (660 nm)
GaAlAs Light Emitting Diode (660 nm)
Lead (Pb) Free Product - RoHS Compliant
SFH 4860
Wesentliche Merkmale
Features
• Hergestellt im Schmelzepitaxieverfahren
• Kathode galvanisch mit dem Gehäuseboden
verbunden
• Fabricated in a liquid phase epitaxy process
• Cathode is electrically connected to the case
• High reliability
• Hohe Zuverlässigkeit
• Gute spektrale Anpassung an
Si-Fotoempfänger
• Matches all Si-Photodetectors
• Hermetically sealed package
• Hermetisch dichtes Metallgehäuse
Anwendungen
Applications
• Lichtschranken für Gleich- und
Wechsellichtbetrieb
• IR-Gerätefernsteuerungen
• Sensorik
• Photointerrupters
• IR remote control
• Sensor technology
• Light curtains
• Lichtgitter
Typ
Type
Bestellnummer
Ordering Code
Gehäuse
Package
SFH 4860
Q62702P5053
18 A3 DIN 41876 (TO-18), Bodenplatte, Plankappe,
Anschlüsse im 2.54-mm-Raster (1/10’’)
Anodenkennzeichnung: Nase am Gehäuseboden
18 A3 DIN 870 (TO-18), flat glass cap, lead spacing
2.54 mm (1/10’’)
anode making: projection at package bottom
2007-12-07
1
SFH 4860
Grenzwerte (TA = 25 °C)
Maximum Ratings
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Betriebs- und Lagertemperatur
Top; Tstg
– 40 … + 100
°C
Operating and storage temperature range
Sperrschichttemperatur
Junction temperature
Tj
125
3
°C
V
Sperrspannung
Reverse voltage
VR
Durchlassstrom
Forward current
IF
50
1
mA
A
Stoßstrom, tp = 10 µs, D = 0
Surge current
IFSM
Ptot
Verlustleistung
140
mW
Power dissipation
Wärmewiderstand
Thermal resistance
RthJA
RthJC
450
160
K/W
K/W
Kennwerte (TA = 25 °C)
Characteristics
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Wellenlänge der Strahlung
Wavelength at peak emission
IF = 50 mA
λpeak
660
nm
Spektrale Bandbreite bei 50% von Imax
Spectral bandwidth at 50% of Imax
IF = 50 mA
∆λ
25
nm
Abstrahlwinkel
Half angle
ϕ
± 50
Grad
deg.
Aktive Chipfläche
Active chip area
0.106
mm2
mm²
ns
A
Abmessungen der aktiven Chipfläche
Dimension of the active chip area
L × B
L × W
0.325 × 0.325
100
Schaltzeiten, Ie von 10% auf 90% und von 90% tr, tf
auf 10%, bei IF = 50 mA, RL = 50 Ω
Switching times, Ιe from 10% to 90% and from
90% to10%, IF = 50 mA, RL = 50 Ω
2007-12-07
2
SFH 4860
Kennwerte (TA = 25 °C)
Characteristics (cont’d)
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Kapazität, VR = 0 V, f = 1 MHz
Capacitance
Co
VF
IR
25
pF
Durchlassspannung, IF = 50 mA, tp = 20 ms
Forward voltage
2(≤ 2.8)
0.01 (≤ 10)
3
V
Sperrstrom, VR = 3V
Reverse current
µA
Gesamtstrahlungsfluss, IF = 50mA, tp = 20 ms
Total radiant flux
Φe
TCI
mW
%/K
Temperaturkoeffizient von Ie bzw. Φe,
IF = 50 mA
– 0.4
Temperature coefficient of Ie or Φe,
IF = 50 mA
Temperaturkoeffizient von VF, IF = 50 mA
Temperature coefficient of VF, IF = 50 mA
TCV
TCλ
– 3
mV/K
nm/K
Temperaturkoeffizient von λ, IF = 50 mA
Temperature coefficient of λ, IF = 50 mA
+ 0.16
Strahlstärke Ie in Achsrichtung
gemessen bei einem Raumwinkel Ω = 0.01 sr
Radiant Intensity Ie in Axial Direction
at a solid angle of Ω = 0.01 sr
Bezeichnung
Parameter
Symbol
Werte
Values
Einheit
Unit
Strahlstärke
Radiant intensity
IF = 50 mA, tp = 20 ms
Ie min
Ie typ
≥ 0.63
1.3
mW/sr
mW/sr
Strahlstärke
Ie typ
15
mW/sr
Radiant intensity
IF = 1 A, tp = 100 µs
2007-12-07
3
SFH 4860
Ιe
Relative Spectral Emission
Irel = f (λ)
Radiant Intensity
Max. Permissible Forward Current
IF = f (TC), RthJC = 160 K/W
= f (IF)
Ie 50 mA
Single pulse, tp = 20 µs
OHR00390
102
OHR01870
OHR01869
120
100
%
Ι F mA
Ι e
Ι rel
Ι e 50 mA
100
80
60
40
101
100
10-1
10-2
80
60
40
20
0
20
0
100
101
102
mA
Ι F
103
0
20
40
60
80
100 ˚C 130
600
650
700
nm
λ
750
TA
Permissible Pulse Handling
Max. Permissible Forward Current
IF = f (TA), RthJA = 450 K/W
Forward Current
IF = f (VF), single pulse, tp = 20 µs
Capability IF = f (τ), TA = 25 °C,
duty cycle D = parameter
OHR00391
OHR01872
10 4
mA
120
OHR01871
103
t P
mA
Ι F
Ι F
t P
T
ΙF
mA
D =
Ι F
100
80
60
40
20
0
T
D =
10 3
10 2
10 1
0.005
0.01
0.02
0.05
102
101
100
0.1
0.2
0.5
DC
10 -5 10 -4 10 -3 10 -2 10 -1
s
t P
10 1
0
20
40
60
80
100 ˚C 130
0
1
2
3
4
5
6
V 7
TA
VF
2007-12-07
4
SFH 4860
Maßzeichnung
Package Outlines
Chip position
(2.7)
14.5
12.5
1.1
0.9
1.1
0.9
Cathode
4.05
3.45
5.5
5.2
Flat glass cap
ø2.54
GMO06983
Maße in mm (inch) / Dimensions in mm (inch).
Radiation Characteristics
Ι
rel = f (ϕ)
40
30
20
10
0
OHR00389
1.0
50
0.8
0.6
0.4
60
70
0.2
0
80
90
100
1.0
0.8
0.6
0.4
0
20
40
60
80
100
120
2007-12-07
5
SFH 4860
Lötbedingungen
Soldering Conditions
Wellenlöten (TTW)
TTW Soldering
(nach CECC 00802)
(acc. to CECC 00802)
OHLY0598
300
C
10 s
Normalkurve
standard curve
250
200
150
100
50
T
235 C ... 260 C
Grenzkurven
limit curves
2. Welle
2. wave
1. Welle
1. wave
ca 200 K/s
2 K/s
5 K/s
100 C ... 130 C
Zwangskühlung
forced cooling
2 K/s
0
0
50
100
150
200
s
250
t
Published by
OSRAM Opto Semiconductors GmbH
Wernerwerkstrasse 2, D-93049 Regensburg
www.osram-os.com
© All Rights Reserved.
The information describes the type of component and shall not be considered as assured characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.
1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain
and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.
2007-12-07
6
Mouser Electronics
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