Q62702X166 [INFINEON]
HiRel Silicon PIN Diode (HiRel Discrete and Microwave Semiconductor Current controlled RF resistor for RF attenuators and switches); HiRel它硅PIN二极管（ HiRel它的离散和微波半导体电流控制RF电阻RF衰减器和开关）
| 型号： | Q62702X166 |
| 厂家： | 
Infineon |
| 描述： | HiRel Silicon PIN Diode (HiRel Discrete and Microwave Semiconductor Current controlled RF resistor for RF attenuators and switches) |
| 文件： | 总4页 (文件大小：101K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HiRel Silicon PIN Diode
BXY 44P
Features
¥ HiRel Discrete and Microwave Semiconductor
¥ Current controlled RF resistor for RF attenuators
and switches
¥ High reverse voltage
¥ Matched diode - pair
¥ Hermetically sealed microwave package
¥
qualified
FP
¥ ESA/SCC Detail Spec. No.: 5513/030
ESD:
Electrostatic discharge sensitive device, observe handling precautions!
Type
BXY 44P-FP (ql)
Marking Ordering Code
see below
Pin Configuration
Package
FP
-
(ql) Quality Level: P: Professional Quality, Ordering Code: Q62702X166
H: High Rel Quality,
S: Space Quality,
Ordering Code: on request
Ordering Code: on request
ES: ESA Space Quality, Ordering Code: Q62702X165
(see Chapter Order Instructions for ordering example)
Table 1
Maximum Ratings
Parameter
Symbol
VR
Limit Values
200
Unit
V
Reverse voltage
Forward current
IF
400
mA
mW
°C
Power dissipation
Ptot
500
Operating temperature range
Storage temperature range
Soldering temperature
Junction temperature
Thermal resistance junction-case
Top
- 55 to + 150
- 65 to + 175
+ 235
Tstg
Tsol
Tj
°C
°C
175
°C
Rth(j-c)
110
K/W
Semiconductor Group
1
Draft A02 1998-04-01
BXY 44P
Electrical Characteristics
Table 2
DC Characteristics at TA = 25 °C unless otherwise specified
Parameter
Symbol
Limit Values
Unit
min.
typ.
max.
Reverse current 1
VR1 = 200 V
IR1
IR2
VF
-
-
100
nA
nA
V
Reverse current 2
VR2 = 100 V
-
-
-
5
Forward voltage
1.0
1.05
IF = 100 mA
Table 3
AC Characteristics at TA = 25 °C unless otherwise specified
Parameter
Symbol
Limit Values
Unit
min.
typ.
max.
Total capacitance
VR = 50 V, f = 1 MHz
CT
-
0.50
0.75
1200
27
pF
W
Forward resistance
f = 100 MHz, IF1 = 10 mA
RF1
RF2
RF3
tL
700
11
900
20
Forward resistance
f = 100 MHz, IF2 = 1 mA
W
Forward resistance
f = 100 MHz, IF3 = 10 mA
2.0
300
3.8
800
5.0
-
W
Minority carrier lifetime
ns
IF = 10 mA, IR = 6 mA, IR = 3 mA
Table 4
Matching Requirements at TA = 25 °C unless otherwise specified
Parameter
Symbol
Limit Values
Unit
min.
typ.
-
max.
Difference in forward resistance 21) RF2
Difference in forward resistance 31) RF3
-
-
15
15
%
%
-
1) DRF [%] = 100 ´ (RF_Diode2 - RF_Diode1)/RF_Diode1
Semiconductor Group
2
Draft A02 1998-04-01
BXY 44P
Order Instructions
Full type variant including package variant and quality level must be specified by the
orderer. For HiRel Discrete and Microwave Semiconductors the ordering code specifies
device family and quality level only.
Ordering Form:
Ordering Code: QÉ
BXY44P-(x) (ql)
(x): Package Variant
(ql): Quality Level
Ordering Example:
Ordering Code: Q62702X165
BXY44P-FP ES
For BXY44P in Flatpack Package; ESA Space Quality Level
Further Information
See our WWW-Pages:
Ð Discrete and RF-Semiconductors (Small Signal Semiconductors)
www.siemens.de/semiconductor/products/35/35.htm
Ð HiRel Discrete and Microwave Semiconductors
www.siemens.de/semiconductor/products/35/353.htm
Please contact also our marketing division:
Tel.: ++89 6362 4480
Fax.: ++89 6362 5568
e-mail: martin.wimmers@hl.siemens.de
Semiconductor Group
3
Draft A02 1998-04-01
BXY 44P
Figure 1
Symbol
FP Package
Millimetre
max.
3.55
3.30
1.70
0.65
0.15
0.40
2.60
-
min.
3.10
3.00
1.30
0.55
0.10
0.25
2.40
5.50
B
B1
D
D1
d
d1
F
L
Semiconductor Group
4
Draft A02 1998-04-01
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