Q62702P5302 [OSRAM]
IR-Lumineszenzdiode (880 nm) im TO-46-Gehäuse; IR- Lumineszenzdiode （ 880 nm）的IM TO- 46 Gehäuse
| 型号： | Q62702P5302 |
| 厂家： | 
OSRAM GMBH |
| 描述： | IR-Lumineszenzdiode (880 nm) im TO-46-Gehäuse |
| 文件： | 总6页 (文件大小：170K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IR-Lumineszenzdiode (880 nm) im TO-46-Gehäuse
Infrared Emitter (880 nm) in TO-46 Package
Lead (Pb) Free Product - RoHS Compliant
SFH 4881
SFH 4883
SFH 4881
SFH 4883
Wesentliche Merkmale
Features
• Hergestellt im Schmelzepitaxieverfahren
• Anode galvanisch mit dem Gehäuseboden
verbunden
• Fabricated in a liquid phase epitaxy process
• Anode is electrically connected to the case
• High reliability
• Hohe Zuverlässigkeit
• Gute spektrale Anpassung an
Si-Fotoempfänger
• Matches all Si-Photodetectors
• Hermetically sealed package
• Hermetisch dichtes Metallgehäuse
Anwendungen
Applications
• Lichtschranken für Gleich- und
Wechsellichtbetrieb
• IR-Gerätefernsteuerungen
• Sensorik
• Photointerrupters
• IR remote control
• Sensor technology
Typ
Type
Bestellnummer
Ordering Code
Strahlstärke (IF = 100 mA, tp = 20 ms)
Radiant Intensity)
Ie (mW/sr)
SFH 4881
SFH 4883
Q62702P5302
Q62702P5303
≥ 40 (typ. 72)
≥ 4 (typ. 8)
2008-02-25
1
SFH 4881, SFH 4883
Grenzwerte (TC = 25 °C)
Maximum Ratings
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Betriebs- und Lagertemperatur
Top; Tstg
– 40 … + 100
°C
Operating and storage temperature range
Sperrspannung
Reverse voltage
VR
5
V
Durchlaßstrom
Forward current
IF
200
2.5
mA
A
Stoßstrom
IFSM
Surge current
tp = 10 µs, D = 0.01
Verlustleistung
Ptot
470
mW
Power dissipation
Wärmewiderstand
Thermal resistance
RthJA
RthJC
450
160
K/W
K/W
Kennwerte (TA = 25 °C)
Characteristics
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Wellenlänge der Strahlung
Wavelength of peak emission
λpeak
880
80
nm
Spektrale Bandbreite bei 50% von Imax
Spectral bandwidth at 50% of Imax
∆λ
nm
Abstrahlwinkel
Half angle
SFH 4881
SFH 4883
ϕ
ϕ
± 5
± 35
Grad
deg.
Aktive Chipfläche
Active chip area
0.16
mm2
A
Abmessungen der aktiven Chipfläche
Dimension of the active chip area
L × B
L × W
0.4 × 0.4
mm²
2008-02-25
2
SFH 4881, SFH 4883
Kennwerte (TA = 25 °C) (cont’d)
Characteristics
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Schaltzeiten, Ie von 10% auf 90% und
von 90% auf 10%
tr, tf
500
ns
Switching times, Ie from 10% to 90% and
from 90% to 10%
IF = 100 mA, RL = 50 Ω
Kapazität
Co
25
pF
Capacitance
VR = 0 V, f = 1 MHz
Durchlaβspannung
Forward voltage
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 µs
IF = 1.5 A, tp = 100 µs
VF
VF
VF
1.5 (≤ 1.8)
2.4 (≤ 3.0)
2.9 (≤ 3.4)
V
V
V
Sperrstrom
Reverse current
VR = 5 V
IR
0.01 (≤ 10)
µA
Gesamtstrahlungsfluß
Total radiant flux
IF = 100 mA, tp = 20 ms
SFH 4881
Φe
Φe
12
15
mW
mW
SFH 4883
Strahlstärke Ie in Achsrichtung
gemessen bei einem Raumwinkel von Ω = 0.01 sr
Radiant Intensity Ie in Axial Direction
measured at a solid angle of Ω = 0.01 sr
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
SFH 4881 SFH 4883
Strahlstärke
Radiant intensity
IF = 100 mA, tp = 20 ms
Ie min
Ie typ
40
72
4
8
mW/sr
mW/sr
Strahlstärke
Ie typ
630
70
mW/sr
Radiant intensity
IF = 1 A, tp = 100 µs
2008-02-25
3
SFH 4881, SFH 4883
Relative Spectral Emission
Ierel = f (λ)
Radiant Intensity
Ie/Ie (100 mA) = f (IF)
Max. Permissible Forward Current
IF = f (TA, TC)
OHF03900
OHR01171
OHR01172
240
10 2
100
mA
IF
Ιe
%
RthJC = 160 K/W
Ιe (100 mA)
Ιerel
200
10 1
80
160
120
10 0
60
40
20
0
10 -1
10 -2
10 -3
RthJA = 450 K/W
80
40
0
10 0
10 1
10 2
10 3 mA 10 4
0
20
40
60
80 ˚C 100
750
800
850
900
950 nm 1000
λ
Ι F
TA, TC
Forward Current
IF = f (VF)
Radiation Characteristics
SFH 4881, Ierel = f (ϕ)
OHR01173
10 1
40˚
30˚
20˚
10˚
0˚
OHR01178
1.0
A
ΙF
50˚
10 0
10 -1
10 -2
10 -3
0.8
0.6
0.4
60˚
70˚
0.2
0
80˚
90˚
0
1
2
3
4
5
100˚
1.0
0.8
0.6
0.4
0˚
20˚
40˚
60˚
80˚
100˚
120˚
VF
Permissible Pulse Handling
Capability IF = f (τ), TC = 25 °C,
RthJC = 160 K/W,duty cycle D =
parameter
Radiation Characteristics
SFH 4883, Ierel = f (ϕ)
40˚
30˚
20˚
10˚
0˚
OHF03756
OHR01186
2.6
tP
1.0
A
tP
IF
IF
D
= T
50˚
T
0.8
0.6
0.4
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
D
=
60˚
70˚
0.005
0.01
0.02
0.05
0.1
0.2
0.2
0
80˚
90˚
0.3
0.5
1
100˚
1.0
0.8
0.6
0.4
0˚
20˚
40˚
60˚
80˚
100˚
120˚
10-5 10-4 10-3 10-2 10-1 100 101 s 102
tp
2008-02-25
4
SFH 4881, SFH 4883
Maßzeichnungen
Package Outlines
SFH 4881
6.2 (0.244)
5.4 (0.213)
Chip position (1.1 (0.043))
ø5.6 (0.220)
ø5.3 (0.209)
1.1 (0.043)
0.9 (0.035)
1
2
0.35 (0.014) max.
20 (0.787)
18 (0.709)
5.2 (0.205)
4.9 (0.193)
1.1 (0.043)
0.9 (0.035)
GEMY6049
SFH 4883
)
Chip position (1.1 (0.043))
1.1 (0.043
1.1 (0.043)
0.9 (0.035)
0.9 (0.035)
1
2
0.35 (0.014) max.
ø5.6 (0.220)
20 (0.787)
18 (0.709)
3.8 (0.150)
3.5 (0.138)
ø5.3 (0.209)
GEMY6050
Maße in mm (inch) / Dimensions in mm (inch).
Gehäuse
Package
TO-46-Metallgehäuse, Glaslinse, hermetisch dicht, Anschlüsse im
2.54-mm-Raster (1/10’’)
TO-46-metal-package, glass lens, hermetically sealed, solder tabs lead
spacing 2.54 mm (1/10’’)
Anschlussbelegung
Pin configuration
Anschluss 2: Kathode
Pin 2 : cathode
2008-02-25
5
SFH 4881, SFH 4883
Lötbedingungen
Soldering Conditions
Wellenlöten (TTW)
TTW Soldering
(nach CECC 00802)
(acc. to CECC 00802)
OHLY0598
300
C
10 s
Normalkurve
standard curve
250
200
150
100
50
T
235 C ... 260 C
Grenzkurven
limit curves
2. Welle
2. wave
1. Welle
1. wave
ca 200 K/s
2 K/s
5 K/s
100 C ... 130 C
Zwangskühlung
forced cooling
2 K/s
0
0
50
100
150
200
s
250
t
Published by
OSRAM Opto Semiconductors GmbH
Wernerwerkstrasse 2, D-93049 Regensburg
www.osram-os.com
© All Rights Reserved.
The information describes the type of component and shall not be considered as assured characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.
1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain
and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.
2008-02-25
6
相关型号：
Q62702X165
HiRel Silicon PIN Diode (HiRel Discrete and Microwave Semiconductor Current controlled RF resistor for RF attenuators and switches)
INFINEON
Q62702X166
HiRel Silicon PIN Diode (HiRel Discrete and Microwave Semiconductor Current controlled RF resistor for RF attenuators and switches)
INFINEON
Q62703-F106
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization)
INFINEON
Q62703-F107
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization)
INFINEON
Q62703-F108
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization)
INFINEON
©2020 ICPDF网 联系我们和版权申明