Q62702P0073 [OSRAM]
Silizium-PIN-Fotodiode in SMT und als Reverse Gullwing;
| 型号： | Q62702P0073 |
| 厂家： | 
OSRAM GMBH |
| 描述： | Silizium-PIN-Fotodiode in SMT und als Reverse Gullwing |
| 文件： | 总8页 (文件大小：139K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Silizium-PIN-Fotodiode; in SMT und als Reverse Gullwing
Silicon PIN Photodiode; in SMT and as Reverse Gullwing
Lead (Pb) Free Product - RoHS Compliant
BPW 34, BPW 34 S, BPW 34 SR
BPW 34
BPW 34 S
BPW 34 SR
Wesentliche Merkmale
Features
• Speziell geeignet für Anwendungen im Bereich
von 400 nm bis 1100 nm
• Especially suitable for applications from
400 nm to 1100 nm
• Kurze Schaltzeit (typ. 20 ns)
• Short switching time (typ. 20 ns)
• DIL plastic package with high packing density
• BPW 34 S/BPW 34 SR: suitable for reflow
soldering
• DIL-Plastikbauform mit hoher Packungsdichte
• BPW 34 S/BPW 34 SR: geeignet für Reflow
Löten
Anwendungen
Applications
• Lichtschranken für Gleich- und
Wechsellichtbetrieb
• Photointerrupters
• IR remote controls
• IR-Fernsteuerungen
• Industrieelektronik
• Industrial electronics
• For control and drive circuits
• „Messen/Steuern/Regeln“
Typ
Type
Bestellnummer
Ordering Code
Fotostrom, Ev=1000 lx, standard light A, VR = 5 V
Photocurrent
Ip (µA)
BPW 34
Q62702P0073
Q65110A1209
Q65110A2701
80 (≥50)
80 (≥50)
80 (≥50)
BPW 34 S
BPW 34 SR
2007-05-23
1
BPW 34, BPW 34 S, BPW 34 SR
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Betriebs- und Lagertemperatur
Top; Tstg
– 40 … + 100
° C
Operating and storage temperature range
Sperrspannung
Reverse voltage
VR
32
V
Verlustleistung, TA = 25 ° C
Ptot
150
mW
Total power dissipation
Kennwerte (TA = 25 °C, Normlicht A, T = 2856 K)
Characteristics (TA = 25 °C, standard light A, T = 2856 K)
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Fotoempfindlichkeit, VR = 5 V
80 (≥50)
nA/Ix
S
Spectral sensitivity
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity
λS max
λ
850
nm
Spektraler Bereich der Fotoempfindlichkeit
S = 10% von Smax
400 … 1100
nm
Spectral range of sensitivity
S = 10% of Smax
Bestrahlungsempfindliche Fläche
Radiant sensitive area
A
7.00
mm2
Abmessung der bestrahlungsempfindlichen
Fläche
L × B
2.65 × 2.65
mm × mm
Dimensions of radiant sensitive area
L × W
Halbwinkel
Half angle
ϕ
60
Grad
deg.
Dunkelstrom, VR = 10 V
Dark current
IR
Sλ
η
2 (≤30)
0.62
nA
Spektrale Fotoempfindlichkeit, λ = 850 nm
Spectral sensitivity
A/W
Quantenausbeute, λ = 850 nm
Quantum yield
0.90
Electrons
Photon
Leerlaufspannung, Ev = 1000 Ix
VO
365 (≥ 300)
mV
Open-circuit voltage
2007-05-23
2
BPW 34, BPW 34 S, BPW 34 SR
Kennwerte (TA = 25 °C, Normlicht A, T = 2856 K)
Characteristics (TA = 25 °C, standard light A, T = 2856 K) (cont’d)
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Kurzschlussstrom, Ev = 1000 Ix
ISC
80
µA
Short-circuit current
Anstiegs- und Abfallzeit des Fotostromes
Rise and fall time of the photocurrent
tr, tf
20
ns
RL = 50 Ω; VR = 5 V; λ = 850 nm; Ip = 800 µA
Durchlassspannung, IF = 100 mA, E = 0
VF
1.3
V
Forward voltage
Kapazität, VR = 0 V, f = 1 MHz, E = 0
C0
72
pF
Capacitance
Temperaturkoeffizient von VO
Temperature coefficient of VO
TCV
TCI
NEP
– 2.6
0.18
mV/K
%/K
Temperaturkoeffizient von ISC
Temperature coefficient of ISC
Rauschäquivalente Strahlungsleistung
Noise equivalent power
VR = 10 V, λ = 850 nm
4.1 × 10– 14
W
-----------
Hz
Nachweisgrenze, VR = 10 V, λ = 850 nm
Detection limit
D*
6.6 × 1012
cm × Hz
---------------------------
W
2007-05-23
3
BPW 34, BPW 34 S, BPW 34 SR
Relative Spectral Sensitivity
Photocurrent IP = f (Ev), VR = 5 V
Total Power Dissipation
S
rel = f (λ)
Open-Circuit Voltage VO = f (Ev)
Ptot = f (TA)
OHF00958
10 3
OHF01066 10 4
mV
OHF00078
160
100
µ
A
mW
P
Ι P
VO
Srel
tot
%
140
120
100
80
80
60
40
10 2
10 3
10 2
10 1
VO
10 1
Ι P
60
10 0
40
20
0
20
10 -1
10 0
10 3 lx 10 4
EV
0
10 0
10 1
10 2
0
20
40
60
80 ˚C 100
400 500 600 700 800 900 nm 1100
TA
λ
Dark Current
Capacitance
Dark Current
IR = f (VR), E = 0
C = f (VR), f = 1 MHz, E = 0
IR = f (TA), VR = 10 V, E = 0
OHF00081
OHF00082
OHF00080
10 3
100
4000
nA
Ι R
Ι R
C
pF
80
70
60
50
40
30
20
10
0
pA
3000
2000
1000
0
10 2
10 1
10 0
10 -1
10 -2
10 -1
10 0
10 1
V
VR
10 2
0
5
10
15
V
VR
20
0
20
40
60
80 ˚C 100
TA
Directional Characteristics
Srel = f (ϕ)
40
30
20
10
0
OHF01402
ϕ
1.0
50
0.8
0.6
0.4
60
70
0.2
0
80
90
100
1.0
0.8
0.6
0.4
0
20
40
60
80
100
120
2007-05-23
4
BPW 34, BPW 34 S, BPW 34 SR
Maßzeichnung
Package Outlines
BPW 34
5.4 (0.213)
Cathode marking
4.0 (0.157)
4.9 (0.193)
4.5 (0.177)
Chip position
3.7 (0.146)
4.3 (0.169)
0.6 (0.024)
0.6 (0.024)
0.4 (0.016)
0.35 (0.014)
0.4 (0.016)
0.5 (0.020)
0.2 (0.008)
0.3 (0.012)
0.8 (0.031)
0.6 (0.024)
0 ... 5˚
5.08 (0.200)
spacing
Photosensitive area
2.65 (0.104) x 2.65 (0.104)
GEOY6643
BPW 34 S
Chip position
1.1 (0.043)
0.9 (0.035)
6.7 (0.264)
6.2 (0.244)
4.5 (0.177)
4.3 (0.169)
1.8 (0.071)±0.2 (0.008)
Photosensitive area
Cathode lead
2.65 (0.104) x 2.65 (0.104)
GEOY6863
Maße in mm (inch) / Dimensions in mm (inch).
2007-05-23
5
BPW 34, BPW 34 S, BPW 34 SR
BPW 34 SR
Chip position
1.1 (0.043)
0.9 (0.035)
6.7 (0.264)
6.2 (0.244)
4.5 (0.177)
4.3 (0.169)
1.8 (0.071)±0.2 (0.008)
Photosensitive area
Cathode lead
2.65 (0.104) x 2.65 (0.104)
GEOY6916
Maße in mm (inch) / Dimensions in mm (inch).
2007-05-23
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BPW 34, BPW 34 S, BPW 34 SR
Lötbedingungen
Soldering Conditions
BPW 34 S
BPW 34 SR
Vorbehandlung nach JEDEC Level 4
Preconditioning acc. to JEDEC Level 4
Reflow Lötprofil für bleifreies Löten
Reflow Soldering Profile for lead free soldering
(nach J-STD-020C)
(acc. to J-STD-020C)
OHLA0687
300
Maximum Solder Profile
Recommended Solder Profile
Minimum Solder Profile
˚C
+0 ˚C
-5 ˚C
260 ˚C
245 ˚C
235 ˚C
255 ˚C
240 ˚C
250
T
±5 ˚C
+5 ˚C
-0 ˚C
217 ˚C
10 s min
200
150
100
50
30 s max
Ramp Down
6 K/s (max)
100 s max
120 s max
Ramp Up
3 K/s (max)
25 ˚C
0
0
50
100
150
200
250
s
300
t
Wellenlöten (TTW)
TTW Soldering
BPW 34
(nach CECC 00802)
(acc. to CECC 00802)
OHLY0598
300
C
10 s
Normalkurve
standard curve
250
200
150
100
50
T
235 C ... 260 C
Grenzkurven
limit curves
2. Welle
2. wave
1. Welle
1. wave
ca 200 K/s
2 K/s
5 K/s
100 C ... 130 C
Zwangskühlung
forced cooling
2 K/s
0
0
50
100
150
200
s
250
t
2007-05-23
7
BPW 34, BPW 34 S, BPW 34 SR
Published by
OSRAM Opto Semiconductors GmbH
Wernerwerkstrasse 2, D-93049 Regensburg
www.osram-os.com
© All Rights Reserved.
The information describes the type of component and shall not be considered as assured characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.
1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain
and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.
2007-05-23
8
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