Q62702P1002 [OSRAM]
GaAs-IR-Lumineszenzdiode; 的GaAs -IR- Lumineszenzdiode
| 型号： | Q62702P1002 |
| 厂家： | 
OSRAM GMBH |
| 描述： | GaAs-IR-Lumineszenzdiode |
| 文件： | 总7页 (文件大小：138K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GaAs-IR-Lumineszenzdiode
GaAs Infrared Emitter
Lead (Pb) Free Product - RoHS Compliant
SFH 409
Wesentliche Merkmale
Features
• GaAs-LED mit sehr hohem Wirkungsgrad
• Hohe Zuverlässigkeit
• Very highly efficient GaAs-LED
• High reliability
• Hohe Impulsbelastbarkeit
• Gute spektrale Anpassung an
Si-Fotoempfänger
• High pulse handling capability
• Good spectral match to silicon photodetectors
• Same package as SFH 309, SFH 487
• Gehäusegleich mit SFH 309, SFH 487
Anwendungen
Applications
• IR-Fernsteuerungen von Fernseh-, Rundfunk-
und Videogeräten, Lichtdimmern
• Lichtschranken bis 500 kHz
• Münzzähler
• IR remote control for hifi and TV sets, video
tape recorders, dimmers
• Light-reflection switches (max. 500 kHz)
• Coin counters
• Sensorik
• Sensor technology
• Diskrete Optokoppler
• Discrete optocouplers
Typ
Type
Bestellnummer
Ordering Code
Gehäuse
Package
SFH 409
Q62702P0860
Q62702P1002
3-mm-LED-Gehäuse (T 1), grau eingefärbt, Anschlüsse
im 2.54-mm-Raster (1/10’’),
Kathodenkennzeichnung: kürzerer Anschluß
3 mm LED package (T 1), grey-colored epoxy resin,
solder tabs lead spacing 2.54 mm (1/10’’),
cathode marking: short lead
SFH 409-2
2011-03-14
1
SFH 409
Grenzwerte (TA = 25 °C)
Maximum Ratings
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Betriebs- und Lagertemperatur
Top; Tstg
– 40 … + 100
°C
Operating and storage temperature range
Sperrspannung
Reverse voltage
VR
5
V
Durchlaßstrom
Forward current
IF
100
3
mA
A
Stoßstrom, τ ≤ 10 μs, D = 0
Surge current
IFSM
Ptot
Verlustleistung
Power dissipation
165
450
mW
K/W
Wärmewiderstand
Thermal resistance
RthJA
Kennwerte (TA = 25 °C)
Characteristics
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Wellenlänge der Strahlung
Wavelength at peak emission
IF = 100 mA, tp = 20 ms
λpeak
950
nm
Spektrale Bandbreite bei 50% von Imax
Spectral bandwidth at 50% of Imax
IF = 100 mA, tp = 20 ms
Δλ
55
nm
Abstrahlwinkel
Half angle
ϕ
± 20
0.09
0.3 × 0.3
2.6
Grad
deg.
Aktive Chipfläche
Active chip area
mm2
mm
mm
pF
A
Abmessungen der aktiven Chipfläche
Dimensions of the active chip area
L × B
L × W
Abstand Chipoberfläche bis Linsenscheitel
Distance chip surface to lens top
H
Kapazität, VR = 0 V
Co
25
Capacitance
2011-03-14
2
SFH 409
Kennwerte (TA = 25 °C)
Characteristics (cont’d)
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Schaltzeiten, Ie von 10% auf 90% und von 90% tr, tf
auf 10%, bei IF = 100 mA, RL = 50 Ω
0.5
μs
Switching times, Ιe from 10% to 90% and from
90% to10%, IF = 100 mA, RL = 50 Ω
Durchlaßspannung,
Forward voltage
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 μs
VF
VF
1.30 (≤ 1.5)
1.9 (≤ 2.5)
V
V
Sperrstrom,
IR
0.01 (≤ 1)
μA
Reverse current, VR = 5 V
Gesamtstrahlungsfluß,
Total radiant flux
Φe
18
mW
IF = 100 mA, tp = 20 ms
Temperaturkoeffizient von Ie bzw. Φe,
IF = 100 mA
TCI
– 0.55
%/K
Temperature coefficient of Ie or Φe,
IF = 100 mA
Temperaturkoeffizient von VF, IF = 100 mA
Temperature coefficient of VF, IF = 100 mA
TCV
TCλ
– 1.5
+ 0.3
mV/K
nm/K
Temperaturkoeffizient von λpeak, IF = 100 mA
Temperature coefficient of λpeak, IF = 100 mA
Gruppierung der Strahlstärke Ie in Achsrichtung
gemessen bei einem Raumwinkel Ω = 0.01 sr
Grouping of Radiant Intensity Ie in Axial Direction
at a solid angle of Ω = 0.01 sr
Bezeichnung
Parameter
Symbol
Werte
Values
Einheit
Unit
SFH 409 SFH 409-11) SFH 409-2 SFH 409-31)
Strahlstärke
Radiant intensity
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 μs
Ie
Ie typ.
≥ 6.3
–
6.3 … 12.5
75
> 10
120
16 … 32
–
mW/sr
mW/sr
1)
Nicht bestellbar als Einzelgruppe.
Can not be ordered as single group.
1)
2011-03-14
3
SFH 409
Ιe
= f (IF)
Relative Spectral Emission
Irel = f (λ)
Radiant Intensity
Max. Permissible Forward Current
IF = f (TA)
Ιe 100 mA
Single pulse, tp = 20 μs
OHR00864
OHR00883
OHR01938
100
%
Ιe
120
Ι
e (100 mA)
mA
Ι F
10 1
Ι rel
100
80
80
60
40
20
0
RthjA = 450 K/W
60
40
20
0
10 0
10 -1
10 -2
10 -1
10 0
A
10 1
0
20
40
60
80
100 ˚C 120
880
920
960
1000
nm
1060
Ι F
TA
λ
Forward Current
IF = f (VF), Single pulse, tp = 20 μs
Permissible Pulse Handling
Capability IF = f (τ), TA = 25 °C
duty cycle D = parameter
10 4
mA
5
OHR00865
OHR01041
10 1
τ
A
Ι F
Ι F
τ
T
Ι F
D
=
T
D
0.005
0.01
=
typ.
max.
10 0
10 -1
10 -2
0.02
0.05
10 3
5
0.1
0.2
0.5
DC
10 2
10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 s 10 2
1
1.5
2
2.5
3
3.5
4
V 4.5
VF
τ
Radiation Characteristics Ιrel = f (ϕ)
40
30
20
10
0
OHR01887
1.0
0.8
0.6
0.4
0.2
0
50
60
70
80
90
100
1.0
0.8
0.6
0.4
0
20
40
60
80
100
120
2011-03-14
4
SFH 409
Maßzeichnung
Package Outlines
Area not flat
5.2
4.5
0.6
0.4
4.1
3.9
4.0
3.6
(3.5)
1.8
1.2
0.6
0.4
29
27
6.3
5.9
Chip position
Cathode (SFH 409)
Anode (SFH 487)
GEX06250
Maße in mm / Dimensions in mm.
Empfohlenes Lötpaddesign
Recommended Solder Pad
Wellenlöten (TTW)
TTW Soldering
4 (0.157)
OHLPY985
Maße in mm (inch) / Dimensions in mm (inch)
2011-03-14
5
SFH 409
Lötbedingungen
Soldering Conditions
Wellenlöten (TTW)
TTW Soldering
(nach CECC 00802)
(acc. to CECC 00802)
OHLY0598
300
C
10 s
Normalkurve
standard curve
250
200
150
100
50
T
235 C ... 260 C
Grenzkurven
limit curves
2. Welle
2. wave
1. Welle
1. wave
ca 200 K/s
2 K/s
5 K/s
100 C ... 130 C
Zwangskühlung
forced cooling
2 K/s
0
0
50
100
150
200
s
250
t
Published by
OSRAM Opto Semiconductors GmbH
Leibnizstrasse 4, D-93055 Regensburg
www.osram-os.com
© All Rights Reserved.
The information describes the type of component and shall not be considered as assured characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.
1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain
and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.
2011-03-14
6
Mouser Electronics
Related Product Links
720-SFH409 - Osram Opto Semiconductor SFH 409
720-SFH409-2 - Osram Opto Semiconductor SFH 409-2
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