Q62702G0077 [INFINEON]
GaAs MMIC (Dual band GSM/PCN power amplifier 35dBm / 34dBm output power at 3.5 V Two amplifiers in a single package); 砷化镓MMIC （双频GSM / PCN功率放大器35dBm的/ 34dBm输出3.5 V两个放大器在单一封装功率）
| 型号： | Q62702G0077 |
| 厂家： | 
Infineon |
| 描述： | GaAs MMIC (Dual band GSM/PCN power amplifier 35dBm / 34dBm output power at 3.5 V Two amplifiers in a single package) |
| 文件： | 总6页 (文件大小：45K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC 856S
PNP Silicon AF Transistor Array
4
• For AF input stages and driver applications
• High current gain
5
6
• Low collector-emitter saturation voltage
• Two ( galvanic) internal isolated Transistors
with high matching in one package
3
2
VPS05604
1
Type
Marking Ordering Code Pin Configuration
3Ds
Package
BC 856S
Q62702-C2532 1/4=E1/E2 2/5=B1/B2 3/6=C2/C1 SOT-363
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
DC collector current
Peak collector current
V
V
V
V
65
80
V
CEO
CBO
CES
EBO
80
5
I
I
100
mA
C
200
CM
Total power dissipation, T = 115 °C
P
T
T
250
mW
°C
S
tot
Junction temperature
Storage temperature
150
j
- 65...+150
stg
Thermal Resistance
1)
Junction ambient
R
R
≤275
≤140
K/W
thJA
thJS
Junction - soldering point
2
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm Cu
Semiconductor Group
1
Ma -12-1998
1998-11-01
Semiconductor Group
1
BC 856S
Electrical Characteristics at T =25°C, unless otherwise specified
A
Parameter
Symbol
Values
typ. max.
Unit
min.
65
80
80
5
DC Characteristics per Transistor
Collector-emitter breakdown voltage
V
V
V
V
-
-
-
-
-
-
-
-
V
(BR)CEO
(BR)CBO
(BR)CES
(BR)EBO
CBO
I = 10 mA, I = 0
C
B
Collector-base breakdown voltage
I = 10 µA, I = 0
C
B
Collector-emitter breakdown voltage
I = 10 µA, V = 0
-
C
BE
Emitter-base breakdown voltage
I = 10 µA, I = 0
-
E
C
Collector cutoff current
= 30 V, I = 0
I
I
-
15
5
nA
µA
-
V
CB
E
Collector cutoff current
= 30 V, I = 0 , T = 150 °C
-
CBO
V
CB
E
A
DC current gain 1)
I = 10 µA, V = 5 V
h
FE
-
250
290
-
C
CE
I = 2 mA, V = 5 V
200
475
C
CE
Collector-emitter saturation voltage1)
I = 10 mA, I = 0.5 mA
V
V
V
mV
CEsat
BEsat
-
-
90
300
650
C
B
I = 100 mA, I = 5 mA
250
C
B
Base-emitter saturation voltage 1)
I = 10 mA, I = 0.5 mA
-
-
700
850
-
-
C
B
I = 100 mA, I = 5 mA
C
B
Base-emitter voltage 1)
I = 2 mA, V = 5 V
BE(ON)
600
-
650
-
750
820
C
CE
I = 10 mA, V = 5 V
C
CE
1) Pulse test: t < 300µs; D < 2%
Semiconductor Group
Semiconductor Group
2
Ma -12-1998
1998-11-01
2
BC 856S
Electrical Characteristics at T =25°C, unless otherwise specified
A
Parameter
Symbol
Values
typ. max.
Unit
min.
AC Characteristics per Transistor
-
-
-
-
-
-
-
Transition frequency
f
-
-
-
-
-
-
-
250
3
MHz
pF
T
I = 20 mA, V = 5 V, f = 100 MHz
C
CE
Collector-base capacitance
= 10 V, f = 1 MHz
C
C
cb
V
CB
Emitter-base capacitance
= 0.5 V, f = 1 MHz
8
eb
V
EB
Short-circuit input impedance
I = 2 mA, V = 5 V, f = 1 kHz
h
h
h
h
4.5
2
kΩ
11e
12e
21e
22e
C
CE
-4
Open-circuit reverse voltage transfer ratio
I = 2 mA, V = 5 V, f = 1 kHz
10
C
CE
Short-circuit forward current transfer ratio
I = 2 mA, V = 5 V, f = 1 kHz
330
30
-
C
CE
Open-circuit output admittance
I = 2 mA, V = 5 V, f = 1 kHz
µS
C
CE
Semiconductor Group
Semiconductor Group
3
Ma -12-1998
1998-11-01
3
BC 856S
Total power dissipation P = f (T *;T )
tot
A
S
* Package mounted on epoxy
300
mW
T
S
200
P
T
A
150
100
50
0
°C
100 120
Kein
15
0
20
40
60
80
T ,T
A
S
Permissible Pulse Load R
= f (t )
Permissible Pulse Load
thJS
p
P
/ P
= f (t )
totmax
totDC
p
10 3
10 3
K/W
-
10 2
/P
D = 0
0.005
0.01
0.02
0.05
0.1
10 2
10 1
10 0
R
P
10 1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
0.2
0.5
10 0
10 -1
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
s
s
t
p
t
p
Semiconductor Group
Semiconductor Group
4
Ma -12-1998
1998-11-01
4
BC 856S
Transition frequency f = f (I )
Collector-base capacität C = f (V
)
T
C
CB
CBO
V
= 5V
Emitter-base capacität CEB = f (V
)
EBO
CE
EHP00378
103
EHP00376
12 BC 856...860
pF
CCB0
CEB0
MHz
5
f T
(
)
10
8
6
4
CEBO
102
5
CCBO
2
0
101
10-1
5
10 0
5
101
10 2
mA
10 -1
5
10 0
101
V
( )
VCB0 VEB0
Ι C
Collector cutoff current I
= f (T )
Collector-emitter saturation voltage
CBO
A
V
= 30V
I = f (V
), h = 20
CEsat FE
CB
C
EHP00380
EHP00381
10 2
10 4
nA
mA
Ι C
ΙCB0
10 3
5
100 C
25 C
-50 C
101
5
max
10 2
5
typ
101
5
100
5
100
5
10 -1
10 -1
0
0
50
100
150
C
0.1
0.2
0.3
0.4
V
0.5
TA
VCEsat
Semiconductor Group
Semiconductor Group
5
Ma -12-1998
1998-11-01
5
BC 856S
Base-emitter saturation voltage
DC current gain h = f (I )
FE
C
I = f (V
), h = 20
FE
V
= 5V
C
BEsat
CE
EHP00379
EHP00382
102
103
mA
5
100 C
25 C
Ι C
hFE
100
25
-50
C
C
C
-50
C
101
5
102
5
101
5
100
5
100
10-1
0
10-2
5 10 -1
5 10 0
5 101
10 2
0.2
0.4
0.6
0.8
V
1.2
mA
Ι C
VBEsat
Semiconductor Group
Semiconductor Group
6
Ma -12-1998
1998-11-01
6
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