Q62702G62 [INFINEON]
GaAs MMIC (Power amplifier for PCN applications 2.5 W 34dBm output power at 3.5 V); 砷化镓MMIC （功率放大器PCN应用2.5瓦34dBm的输出功率为3.5 V）
| 型号： | Q62702G62 |
| 厂家： | 
Infineon |
| 描述： | GaAs MMIC (Power amplifier for PCN applications 2.5 W 34dBm output power at 3.5 V) |
| 文件： | 总14页 (文件大小：140K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CGY 184
GaAs MMIC
Preliminary Data
Power amplifier for PCN applications
2.5 W (34dBm) output power at 3.5 V
Overall power added efficiency 43 %
Fully integrated 4 stage amplifier
Power ramp control
Input matched to 50 ohms, simple output match
ESD: Electrostatic discharge sensitive device,
observe handling precautions!
Type
CGY 184
Marking
Ordering code
(taped)
Package 1)
CGY 184
Q62702G62
MW 16
Maximum ratings
Characteristics
Symbol
max. Value
Unit
Positive supply voltage
Supply current
V
9
4
V
A
D
I
D
Channel temperature
Storage temperature
Pulse peak power dissipation
T
150
°C
°C
W
Ch
stg
T
-55...+150
tbd
P
Pulse
duty cycle 12.5%, ton=0.577ms
Total power dissipation (Tc ꢀꢁꢂꢃꢁ&ꢄ
Tc: Temperature on case
P
8.5
W
tot
Thermal Resistance
Characteristics
Symbol
max. Value
Unit
Junction-Case 2)
R
K/W
≤8.5
thJC
1) Dimensions see page 14
2) see also page 9
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HL HF PE GaAs
CGY 184
Functional block diagram
on
(2
)
VD2(7)
VD1(4)
VD3(8)
control circuit
Vneg(15)
Pout/VD4 (9,10,11
Pin(3)
GND2(6)
GND1(5)
GND3(17)
Pin #
Configuration
1
2
3
4
5
6
7
8
n. c.
Vcon
PIN
Control voltage for power ramping
RF-input
VD1
Drain voltage 1st stage
Ground pin 1st stage
Ground pin 2nd stage
Drain voltage 2nd stage
Drain voltage 3rd stage
Gnd1
Gnd2
VD2
VD3
9,10,11 POUT/VD4 Drain voltage 4th stage and RF-output
12
13
n. c.
n. c.
14
n. c.
15
Vneg
Block capacitor negativ voltage generator
Ground (backside of MW16 housing)
16
n. c.
(17)
GND3
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HL HF PE GaAs
CGY 184
Electrical characteristics
(T = 25°C , f=1.75 GHz, Z =Z =50 Ohm, VD=3.5V, Vaux=3.5V, Vcontrol=2.5V, unless
A
S
L
otherwise specified; pulsed with a duty cycle of 12.5%, ton=577usec)
Characteristics
Symbol
min
typ
max
Unit
Supply current
VD=3.5V; Pin=0dBm
I
-
1.67
-
A
DD
Supply current neg. voltage gener.
Vaux=3.5V
I
-
10
-
mA
aux
Control Current
IC
ID
2
3
mA
Shut-off current
40
µA
( Vc=0V, VD=3.5V, no RF- drive )
Small signal gain
Pin =-10dBm
G
G
-
-
-
-
-
-
-
40
34
-
-
-
-
-
-
-
dB
dB
Power gain
VD=3.5V; P =0dBm
in
Output Power
P
34
dBm
dB
o
VD=3.5V; P =0dBm
in
Power gain
VD=3.5V; Pin=0dBm, T=85°C
G
33.7
33.7
43
Output Power
P
dBm
%
o
VD=3.5V; P =0dBm, T=85°C
in
Overall Power added Efficiency
VD=3.5V; ; VC=2.5V; P =0dBm
ꢀ
in
Dynamic range (Pout,max-Pout,min
)
80
dB
VC= 0.5....2.5V
Harmonics
VC=2.2V, Pin=0dBm
2f0
3f0
-
-
-60
-40
-
-
dBc
RX-Noise Power
-
-80
-
dBm/
VC=2.2V; Pin=0dBm ;
fRX=1.805....1.88GHz
100kHz
Input VSWR
-
-
1.8 : 1
-
-
VD=3.5V
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HL HF PE GaAs
CGY 184
DC-ID(Vneg) characteristics – typical values of stage 1 and 2, VD=3V
0,35
0,3
High current
Medium current
Low current
ID
[A]
0,25
0,2
0,15
0,1
0,05
0
-5
-4,5
-4
-3,5
-3
-2,5
-2
-1,5
-1
-0,5
0
Vneg [V]
DC-Output characteristics – typical values of stage 1 and 2
0,25
Ptot=223.7m W
Vneg=-0.25
0,2
-0.50 V
-0.75 V
0,15
-1.00 V
-1.25 V
0,1
-1.50 V
-1.75 V
0,05
-2.00 V
-2.25 V
0
0
0,5
1
1,5
2
2,5
3
3,5
VD [V]
4
4,5
5
5,5
6
6,5
Pin 2( Vcon ) has to be open during measuring DC-characteristics
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HL HF PE GaAs
CGY 184
DC-ID(Vneg) characteristics – typical values of stage 3, VD=3V
2
1,8
1,6
1,4
1,2
1
High current
Medium current
Low current
ID
[A]
0,8
0,6
0,4
0,2
0
-5
-4,5
-4
-3,5
-3
-2,5
-2
-1,5
-1
-0,5
0
Vneg [V]
DC-Output characteristics – typical values of stage 3
1,4
Vneg=-0.25
Ptot=1.34 W
1,2
-0.50 V
1
-0.75 V
-1.00 V
-1.25 V
0,8
0,6
0,4
0,2
0
-1.50 V
-1.75 V
-2.00 V
-2.25 V
0
0,5
1
1,5
2
2,5
3
3,5
VD [V]
4
4,5
5
5,5
6
6,5
Pin 2( Vcon ) has to be open during measuring DC-characteristics
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5
23.07.97
1998-11-01
HL HF PE GaAs
CGY 184
DC-ID(Vneg) characteristics – typical values of stage 4, VD=3V
10
9,5
9
High current
Medium current
Low current
8,5
8
ID
[A]
7,5
7
6,5
6
5,5
5
4,5
4
3,5
3
2,5
2
1,5
1
0,5
0
-5
-4,5
-4
-3,5
-3
-2,5
-2
-1,5
-1
-0,5
0
Vneg [V]
DC-Output characteristics – typical values of stage 4
7
Ptot=6.7 W
Vneg=-0.25
6
-0.50 V
5
-0.75 V
-1.00 V
-1.25 V
-1.50 V
4
3
2
1
0
-1.75 V
-2.00 V
-2.25 V
0
0,5
1
1,5
2
2,5
3
3,5
VD [V]
4
4,5
5
5,5
6
6,5
Pin 2( Vcon ) has to be open during measuring DC-characteristics
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6
23.07.97
1998-11-01
HL HF PE GaAs
CGY 184
Pout and PAE vs. Pin
( VD=Vaux=3.5V, VCon=2.2V, CLK=10MHz/3.5V/0V, f=1.75GHz, duty cycle 10%,otn=0.33ms )
36
34
32
30
28
26
24
22
20
18
45
40
35
30
25
20
15
10
5
Po
ut
[d
B
P
A
E
[%
Pout [dBm]
PAE [%]
m]
0
-15 -14 -13 -12 -11 -10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
1
2
3
4
Pin [dBm]
Pout and PAE vs. Vcon
( VD=Vaux=3.5V, CLK=10MHz/3.5V/0V,f=1.75GHz,P in=0dBm, duty cycle 10%, ton=0.33ms )
40
45
40
35
30
25
20
15
10
5
30
20
10
Po
ut
[d
B
PA
E
[%]
0
m]
-10
-20
-30
-40
-50
Pout [dBm]
PAE [%]
0
0
0,1 0,2 0,3 0,4 0,5 0,6 0,7 0,8 0,9
1
1,1 1,2 1,3 1,4 1,5 1,6 1,7 1,8 1,9
2
2,1 2,2 2,3 2,4
Vcon [V]
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HL HF PE GaAs
CGY 184
Output power at different temperatures
( VD=VAUX=3.5V, VCon=2.2V, CLK=0V/3.5V/10MHz, f=1.75GHz, P =0dBm, duty cycle 10%, ton=0.33ms )
in
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
T=-20°C
T=25°C
T=85°C
-15
-14
-13
-12
-11
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
1
2
3
4
5
Pin [dBm]
Power added efficiency at different temperatures
( VD=VAUX=3.5V, VCon=2.2V, CLK=0V/3.5V/10MHz, f=1.75GHz, P =0dBm, duty cycle 10%, ton=0.33ms )
in
45
40
35
30
25
20
15
10
5
T=-20°C
T=25°C
T=85°C
0
-15
-14
-13
-12
-11
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
1
2
3
4
5
Pin [dBm]
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HL HF PE GaAs
CGY 184
CGY184
Pout vs. VC
( VD=VAUX =3.5V, CLK=3.5V/0V/13MHz, f=1.75GHz, duty cycle 10%, t on =0.33ms )
40
30
20
10
0
-10
-20
-30
-40
-50
T=25°C
T=-20°C
T=85°C
0
0,2
0,4
0,6
0,8
1
1,2
1,4
1,6
1,8
2
2,2
VCon [V]
AM – PM Conversion:
( Conditions: VD=VAUX=3.5V, f=1.75GHz, CLK=10MHz/3.5V/0V, Pout controlled by VCon
)
V
Con [V]
2,2
2,1
2
Pout [dBm]
34,53
34,53
34,37
34,2
∆ϕ [deg/dB]
2,8
3
2,7
1,9
1,8
1,7
1,6
1,5
1,4
1,3
1,2
1,1
1
2,6
2,5
33,87
33,37
32,37
30,2
2,4
1,5
0,5
-0,3
-0,2
-0,2
0,4
26,7
21,2
12,87
3,37
-0,2
0,3
-11,63
-24,8
0,9
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HL HF PE GaAs
CGY 184
AM - PM - conversion
∆ϕ vs. Pout
(VD=VAUX=3.5V, CLK=10MHz/3.5V/0V,P in=0dBm, f=1.75GHz, duty cycle 10%, T=25°C)
3,5
3
2,5
2
[d
1,5
1
eg
∆ϕ
0,5
0
-0,5
35
30
25
20
15
10
5
0
-5
-10
-15
-20
-25
Pout [dBm]
Ptotmax in mW
10000
9000
8000
7000
6000
5000
4000
3000
2000
1000
0
82
Ptot max = f ( Tc )
0
20
40
60
80
100
120
140
160
Temperature Tc in °C
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HL HF PE GaAs
CGY 184
Thermal Resistance and Temperature Considerations:
Because the MW16 heat sink is not easily accessible to a temperature measurment the
thermal resistance is defined as RthJC using the case temperature TC
Calculation of Junction Temperature TJ :
TJ = TC + RthJC * Ptot
Measurment of Case Temperature TC :
Tc should be measured in operation at the upper side of the case where the temperature
is highest. Small thermoelements ≤ 1mm (thin wires, thermopaste) and thermopapers
with low heat dissipation are well suited.
Thermoelement for Tcase
Junction ( J )
Case ( C )
P C B
soldered Heatsink
Ambient ( A )
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HL HF PE GaAs
CGY 184
CGY184 application board:
1 n
3k9
1 n
1 n
W 4 - 0 S A 4 B
1n
33p
33p
2.2nH
15p
120p
1n
4,7
µ
Layout size is 32mm x 19mm
Connections:
Vd
Vaux
2.7 to 6VDC, pulsed (PCN: 12,5% duty cycle, ton=0.577ms)
2.7 to 6VDC
Vcontrol 0.2 to 2.2VDC (0.2V: min Pout, 2.2V: max Pout)
CLK
5 MHz to 15 MHz (with a 10uH inductor)
or 150 kHz to 250 kHz (with a 100uH inductor instaed of the 10uH)
(rectangular signal, 50% duty, 0 Volt to Vd voltage level)
Power on sequence:
1. continuous clock (CLK) on
2. turn on Vaux ==> check negative voltage at pin#16 (-4......-10V)
3. turn on Vcon (may be at the same time as 2)
turn on Drainvoltage Vd
turn on Input Power
Operation without using the negative voltage generator:
If you don’t want to use the internal negative voltage generator, you can also apply -4....-6 V
at pin#15 (Vneg-Pin). In this case the passive devices at the pins 1, 14 and 16 are not
necessary (1 inductor and 3 capacitors).
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HL HF PE GaAs
CGY 184
Vaux
CLK
R11
R12
C14
L11
C12
(Vneg)
D1.2
D1.1
T1
C13
C11
Vcon
C9
Vneg
Vcon
RFin
VD1
RF IN
C10
C8
GND1
GND2
VD2
CGY184
RFout
RFout
RFout
L2
RF OUT
C5
C4
VD3
C3
C7
L1
C6
Vd
C1
C2
Part List:
CGY184
Negative Voltage Generator
L1
L2
33nH*
D1
T1
BAS40-04W
BC848B
10uH***
1nF
1nF
47nF
1nF
3.8kOhm
680Ohm
2.2nH**
4.7µF
120pF
5pF
1pF
33pF
1nF
330pF
15pF
1nF
C1
C2
C3
C4
C5
C6
C7
C8
C9
C10
L11
C11
C12
C13
C14
R11
R12
33pF
*
33nH SMD-Inductor for drain3: Part Number BV1250 distribution by
Horst David GmbH, 85375 Neufarn, Germany
Phone-No ..8165/9548-0 , Fax-No ..8165/9548-28
** Toko Type LL1608-FH Chip Induktor
*** Chip-Induktor Simid02
(Siemens-Matsushita Ordering-Code: B82422-A1103-K100 )
Siemens Aktiengesellschaft
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1998-11-01
HL HF PE GaAs
CGY 184
Semiconductor Device Outline MW16
Published by Siemens AG, Bereich Bauelemente, Vertrieb, Produkt-Information,
Balanstraße 73, D-81541 München
copyright Siemens AG 1996. All Rights Reserved
As far as patents or other rights of third parties are concerned, liability is only assumed for
components per se, not for applications, processes and circuits implemented within
components or assemblies.
The information describes the type of component and shall not be considered as assured
characteristics.
Terms of delivery and rights to change design reserved.
For questions on technology, delivery and prices please contact the Offices of
Semiconductor Group in Germany or the Siemens Companies and Representatives world-
wide (see address list).
Due to technical requirements components may contain dangerous substances. For
information on the type in question please contact your nearest Siemens Office,
Semiconductor Group.
Siemens AG is an approved CECC manufacturer
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1998-11-01
HL HF PE GaAs
相关型号：
Q62702G63
GaAs MMIC (Power amplifier for GSM class 4 phones 3.2 W 35dBm output power at 3.5 V Overall power added efficiency 50%)
INFINEON
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