Q62702G63 [INFINEON]
GaAs MMIC (Power amplifier for GSM class 4 phones 3.2 W 35dBm output power at 3.5 V Overall power added efficiency 50%); 砷化镓MMIC （在3.5 V总功率附加效率50 ％电源放大器，用于GSM类4手机3.2 W¯¯ 35dBm的输出功率）
| 型号： | Q62702G63 |
| 厂家： | 
Infineon |
| 描述： | GaAs MMIC (Power amplifier for GSM class 4 phones 3.2 W 35dBm output power at 3.5 V Overall power added efficiency 50%) |
| 文件： | 总10页 (文件大小：102K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CGY 96
GaAs MMIC
Power amplifier for GSM class 4 phones
3.2 W (35dBm) output power at 3.5 V
Overall power added efficiency 50 %
Fully integrated 3 stage amplifier
Power ramp control
Input matched to 50 ohms, simple output match
ESD: Electrostatic discharge sensitive device,
observe handling precautions!
Type
Marking
Ordering code
(taped)
Package
CGY 96
CGY 96
Q62702G63
MW 16
Maximum ratings
Characteristics
Symbol
max. Value
Unit
Positive supply voltage
Supply current
V
9
4
V
A
D
I
D
Channel temperature
Storage temperature
Pulse peak power dissipation
T
T
150
°C
°C
W
Ch
-55...+150
tbd
stg
P
Pulse
duty cycle 12.5%, ton=0.577ms
Total power dissipation (Ts ≤ 80 °C)
Ts: Temperature at soldering point
P
tbd
W
tot
Thermal Resistance
Characteristics
Symbol
max. Value
Unit
Channel-soldering point
R
tbd
K/W
thChS
Siemens Aktiengesellschaft
Semiconductor Group
1
1
23.07.1998
1998-11-01
HL HF PE GaAs
CGY 96
Functional block diagramm:
VD1(1)
VD2(2)
Vcontrol(8)
CGY96
Vneg(13)
current
control circuit
VD3/RFout(4,5,6)
RFin(16)
GND2(17)
GND1(14,15)
Pin #
Name
Configuration
1
2
Drain voltage 1st stage
VD1
VD2
n.c.
Drain voltage 2nd stage
-
3
4,5,6
Drain 3rd stage and RF-output
VD3 /
RFout
7
8
-
n.c.
Vcontrol
n.c.
Control voltage for power ramping
-
9,10,11,
12
13
14,15
16
negative voltage for current control circuit
Ground pin 1st stage
Vneg
Gnd1
RFin
RF Input
(17)
Ground (backside of MW16 package)
GND2
Siemens Aktiengesellschaft
Semiconductor Group
2
2
23.07.1998
1998-11-01
HL HF PE GaAs
CGY 96
Electrical characteristics
(T = 25°C, Vneg=-5V, Vcontrol=2.2V; duty cycle 12.5%, ton=577µsec)
A
Characteristics
Frequency range
Supply current
Symbol
min
880
-
typ
-
1.8
max
915
-
Unit
MHz
A
f
ID
Pin=0dBm
Supply current neg. voltage gener.
Vaux=3.5V
IAUX
-
10
-
mA
Gain (small signal)
Power gain
G
GP
-
-
40
35
-
-
dB
dB
P =0dBm
in
Output Power
POUT
-
-
-
35
50
80
-
-
-
dBm
%
P =0dBm, Vcontrol=2.0V.....2.5V)
in
Overall Power added Efficiency
η
P =0dBm
in
Dynamic range output power
Vcontrol = 0.2...2.2V
Harmonics
dB
H(2f0)
H(3f0)
H(4f0)
NRX
-
-
-
-
-40
-43
-44
-81
-
-
-
-
dBc
dBc
dBc
dBm
Pin=0dBm
Noise Power in RX (935-960MHz)
Pin=0dBm, Pout=35dBm, 100kHz
RBW
Stability all spurious outputs < -60dBc,
VSWR load, all phase angles
Input VSWR
-
-
10 : 1
-
-
-
-
1.7 : 1
Siemens Aktiengesellschaft
Semiconductor Group
3
3
23.07.1998
1998-11-01
HL HF PE GaAs
CGY 96
Output Power and PAE vs. Input Power
(Vd=3.5V, Vcontrol=2.2V, f=900MHz, duty cycle 12.5%, ton=577µs)
38
37
36
35
34
33
75
70
65
60
55
50
45
40
35
30
25
20
15
10
5
Po
ut
[d
B
32
PA
E
[%
]
31
30
29
28
27
26
25
24
23
m]
Pout [dBm]
PAE [%]
0
-16 -15 -14 -13 -12 -11 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1
0
1
2
3
4
5
6
Pin [dBm]
Output Power and PAE vs. Control Voltage:
(Vd=3.5V, Pin=0dBm, f=900MHz, duty cycle 12.5%, ton=577µs)
100
90
80
70
60
50
40
30
20
10
0
40
30
20
10
0
-10
-20
-30
Pout [dBm]
PAE [%]
-40
-50
-60
0
0,2
0,4
0,6
0,8
1
1,2
1,4
1,6
1,8
2
2,2
2,4
2,6
2,8
3
Vcontrol [V]
Siemens Aktiengesellschaft
Semiconductor Group
4
4
23.07.1998
1998-11-01
HL HF PE GaAs
CGY 96
Power Gain and Input Return Loss vs. Frequency
(Vd=3.5V, Vcontrol=2.2V, Pin=5dBm, duty cycle 12.5%, ton=577µs)
35,0
34,0
33,0
32,0
31,0
30,0
29,0
28,0
27,0
26,0
25,0
0,880
0,885
0,890
0,895
0,900
0,905
0,910
0,915
Freq [GHz]
-10,0
-10,5
-11,0
-11,5
-12,0
-12,5
-13,0
-13,5
-14,0
-14,5
-15,0
0,880
0,885
0,890
0,895
0,900
0,905
0,910
0,915
Freq [GHz]
Siemens Aktiengesellschaft
Semiconductor Group
5
5
23.07.1998
1998-11-01
HL HF PE GaAs
CGY 96
Output Power vs. Drain Voltage
(matched for VD=3.5V, Vcontrol=2.2V, Pin=0dBm, duty cycle 12.5%, ton=577µs)
40
39
38
37
36
35
34
33
32
31
30
2,2 2,4 2,6 2,8 3,0 3,2 3,4 3,6 3,8 4,0 4,2 4,4 4,6 4,8 5,0 5,2
VD [V]
Output Power at different Temperatures
(Vd=3.5V, Vcontrol=2.2V, f=900MHz, duty cycle 12.5%, ton=577µs)
36,0
35,5
35,0
-20°C
34,5
+20°C
34,0
+70°C
33,5
33,0
32,5
32,0
31,5
31,0
30,5
30,0
29,5
29,0
28,5
28,0
-11 -10 -9
-8
-7
-6
-5
-4
-3
-2
-1
0
1
2
3
4
5
6
7
8
Pin [dBm]
Siemens Aktiengesellschaft
Semiconductor Group
6
6
23.07.1998
1998-11-01
HL HF PE GaAs
CGY 96
PAE at different Temperatures
(Vd=3.5V, Vcontrol=2.2V, f=900MHz, duty cycle 12.5%, ton=577µs)
55
50
-20°C
45
+20°C
+70°C
40
35
30
25
20
15
10
5
0
-11 -10 -9
-8
-7
-6
-5
-4
-3
-2
-1
0
1
2
3
4
5
6
7
8
Pin [dBm]
Siemens Aktiengesellschaft
Semiconductor Group
7
7
23.07.1998
1998-11-01
HL HF PE GaAs
CGY 96
CGY 96 Evaluation Board
R11
T1
C14
Vaux
C11
L11
CLK
D1
C3
C4
C G Y96
L3
C2
L1
L2
C5
C1
R1
(Size 34mm x 27mm)
Connections:
• Vd
• Vaux
2.7 to 6VDC, pulsed (GSM: 12,5% duty cycle, ton=0.577ms)
2.7 to 6VDC
• Vcontrol 0.2 to 2.2 VDC (0.2V: min Pout, 2.2V: max Pout)
• CLK
5 MHz to 15 MHz (with a 10uH inductor)
or 150 kHz to 250 kHz (with a 100uH inductor instaed of the 10uH)
(rectangular signal, 50% duty, 0 Volt to Vd voltage level)
Power on sequence:
1. continuous clock (CLK) on
2. turn on Vaux ==> check negative voltage at pin#13 (-5......-10V)
3. turn on Vcontrol (may be at the same time as 2)
turn on Drainvoltage Vd
turn on Input Power
Operation without using the negative voltage generator:
Operation without using the on board negative voltage generator is possible. In that case
apply -5....-8 V directly at pin#13 (Vneg-Pin). The decvices in front of pin 13 are not
necessary in that case.
Siemens Aktiengesellschaft
Semiconductor Group
8
8
23.07.1998
1998-11-01
HL HF PE GaAs
CGY 96
Vaux
CLK
R11
R12
L11
C14
(Vneg)
D1.2
D1.1
C12
T1
C13
C11
Vcontrol
Vd
Vcon
C5
L3
RFout
RFout
RFout
CGY96
RF OUT
Vneg
C3
C4
GND1
GND1
RFin
VD2
VD1
RF IN
C2
L2
L1
R1
C1
Part List:
CGY96
L1
L2
L3
C1
C2
C3
C4
C5
Negative Voltage Generator
33nH
33nH
33nH*
1nF
12pF
10pF**
2.2pF**
1nF
D1
T1
BAS40-04W
BC848B
10uH
L11
C11
C12
C13
C14
R11
R12
1nF
1nF
47nF
1nF
3.8kOhm
680Ohm
R1
3.3Ohm
* 33nH SMD-Inductor for drain3: Part Number BV1250
distribution by
Horst David GmbH, 85375 Neufarn, Germany
Phone-No ..8165/9548-0 , Fax-No ..8165/9548-28
** for maximum efficiency use high quality capacitors for
the output matching: Part Number ACCU-P0603
distribution by
AVX GmbH, 85757 Karlsfeld, Germany
Phone-No ..8131/9004-0
Siemens Aktiengesellschaft
Semiconductor Group
9
9
23.07.1998
1998-11-01
HL HF PE GaAs
CGY 96
Published by Siemens AG, Bereich Bauelemente, Vertrieb,
Produkt-Information, Balanstraße 73, D-81541 München
copyright Siemens AG 1996. All Rights Reserved
As far as patents or other rights of third parties are concerned, liability is only assumed for
components per se, not for applications, processes and circuits implemented within
components or assemblies.
The information describes the type of component and shall not be considered as assured
characteristics.
Terms of delivery and rights to change design reserved.
For questions on technology, delivery and prices please contact the Offices of
Semiconductor Group in Germany or the Siemens Companies and Representatives world-
wide (see address list).
Due to technical requirements components may contain dangerous substances. For
information on the type in question please contact your nearest Siemens Office,
Semiconductor Group.
Siemens AG is an approved CECC manufacturer.
Siemens Aktiengesellschaft
Semiconductor Group
10
10
23.07.1998
1998-11-01
HL HF PE GaAs
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