Q62702G0076 [INFINEON]
GaAs MMIC (Tri mode power amplifier for AMPS/ CDMA /TDMA portable cellular phones Dual band operation); 砷化镓MMIC （三模式功率放大器的AMPS / CDMA / TDMA的便携式移动电话双波段操作）
| 型号： | Q62702G0076 |
| 厂家： | 
Infineon |
| 描述： | GaAs MMIC (Tri mode power amplifier for AMPS/ CDMA /TDMA portable cellular phones Dual band operation) |
| 文件： | 总18页 (文件大小：302K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CGY 0819
GaAs MMIC
Tri mode power amplifier for AMPS/ CDMA /TDMA
portable cellular phones
Dual band operation
31.5 dBm saturated output power @ PAE=55% typ.
29 dBm linear output power@ PAE=40% typ.
Two independent amplifier chains
Power ramp control
Input matched to 50 ohms, simple output match
on PCB
ESD: Electrostatic discharge sensitive device,
observe handling precautions!
Type
CGY 0819
Marking
Ordering code
(taped)
Package
CGY 0819
Q62702G0076
MW 16
Maximum ratings
Characteristics
Symbol
max. Value
Unit
V
Positive supply voltage
Supply current
V
9
4
D
I
A
D
Channel temperature
Storage temperature
T
T
150
°C
°C
W
Ch
stg
-55...+150
tbd
Pulse peak power dissipation
duty cycle 12.5%, ton=0.577ms
P
Pulse
P
tbd
W
Total power dissipation (Ts ≤ 80 °C)
Ts: Temperature at soldering point
tot
Thermal Resistance
Characteristics
Symbol
max. Value
Unit
Channel-soldering point
R
11
K/W
thChS
Siemens Aktiengesellschaft
Semiconductor Group
1
1
16.09.98
1998-11-01
HL HF PE GaAs 1 / Fo
CGY 0819
Functional Block Diagram:
Pin Configuration:
Pin #
1
Name
VD Cell
Configuration
Drain voltage cell preamplifier stage
RF IN Cell Band
Negative voltage
Control voltage cell. PA
Control voltage PCS PA
Negative voltage
RF IN PCS Band
Drain voltage PCS preamplifier stage
RF out PCS
2
RF IN Cell
Vneg
3
4
Vcon cell
Vcon PCS
Vneg
5
6
7
RF IN PCS
VD PCS
8
9
RF out PCS
RF out PCS
RF out PCS
RF out PCS
GND
10
11
12
13
14
15
16
RF out PCS
RF out PCS
RF out PCS
RF Ground
RF out Cell
RF out Cell
RF out Cell
RF out Cell
RF out Cell
RF out Cell
Siemens Aktiengesellschaft
Semiconductor Group
2
2
16.09.98
1998-11-01
HL HF PE GaAs 1 / Fo
CGY 0819
Electrical Characteristics
(T = 25°C , Z =Z =50 Ohm, VD=3.5V, I =300mA, unless otherwise specified )
A
S
L
Dq
Characteristics
Symbol
min
typ
max
Unit
Frequency range
f
MHz
Cellular frequency band
PCS frequency band
824
1850
849
1910
Duty cycle
tON/tOFF
100
%
dBm
dBm
dB
AMPS output power
P
P
31,5
30
24
27
29
24
28
28
29
24
TDMA cellular output power
AMPS gain at max. output
TDMA cellular gain at max. output
TDMA PCS output power
G
G
dB
P
dBm
dB
TDMA PCS gain at max. output
CDMA cellular output power
CDMA cellular gain at max. output
CDMA PCS output power
G
P
dBm
dB
G
P
dBm
dB
CDMA PCS gain at max. output
G
Power ramping characteristic
Full output power
Pinch off
Vcontr
V
2.5
0.5
Adjacent Channel Power CDMA
900kHz offset (cellular band)
1.25 MHz offset (PCS band)
1.98 MHz offset
Padj/Pmain
dBc @
30kHz
-45
–45
-54
Adjacent channel power TDMA
adjacent
Padj/Pmain
-28
–45
-45
dBc @
30kHz
alternate
2nd alternate
AMPS efficiency
PAE
PAE
55
%
%
TDMA DC to RF efficiency
@Padj=-26dBc
at max. output
Cellular Band:
PCS Band
40
40
CDMA DC to RF efficiency
@Padj=-42dBc
at max. output
PAE
%
Cellular Band
PCS Band
35
40
at Pout=10 dBm ( Iq set to 100mA )
8
Siemens Aktiengesellschaft
Semiconductor Group
3
3
16.09.98
1998-11-01
HL HF PE GaAs 1 / Fo
CGY 0819
Characteristics
Symbol
min
typ
max
Unit
Receive band noise power density
Cell band ( 869 to 894 MHz )
PCS band ( 1930 to 1990 MHz )
PRX
dBm/Hz
-137
-145
DC supply voltage range
VD
3
3.5
4.0
-7
V
Negative supply voltage range
Standby current @Vcon=0V
Vneg
Ipwr dwn
-5.0
V
500
µA
mA
mA
mA
°C
Quiescent current
IQ
IControl
INEG
υ
300
2
Current consumption at VContr
Current consumption at VNEG
Operating temperature range
2
-30
+85
Power on sequence:
1. connect negative voltage to PA
2. connect control voltage to PA
3. turn on Vd
4. turn on Pin
To switch off the device please use reverse sequence.
Siemens Aktiengesellschaft
Semiconductor Group
4
4
16.09.98
1998-11-01
HL HF PE GaAs 1 / Fo
CGY 0819
Application Circuit:
IC1
C2
L4
C6
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
VD1Cell
RFinCell
VnegCell
VconCell
VconPCS RFout4PCS
VnegPCS RFout3PCS
RFout3Cell
100p
RFout2Cell
RFout1Cell
GND
RFout Cel
RFin Cell
8n2
100p
C18
Vcon Cell
Vcon PCS
C7
RFin PCS
100p
RFinPCS
VD1PCS
RFout2PCS
RFout1PCS
RFout PCS
C10
100p
GND (backside MW16)
17CGY0819
100p
BCP 72
Vd
C11
V3
R3
10n
C19
Vsw
68R
10n
C20
Vaux
33n
1
2
C23
1n0
BC848B
3
BAS 40-04
V1
C22
1n0
CLK
V2
Evaluation Board Parts List
Part Type
Capacitor
Capacitor
Position
Description
Manufacturer
Siemens
Part Number
C1
3.9pF 0403
C2, C3, C6, C7, 100pF 0402
C10, C16, C18
Siemens
Capacitor
Capacitor
Capacitor
C4
C5
5.6pF 0603 HQ AVX
06035J5R6GBT
06035J100GBT
10pF 0603 HQ
10nF0402
AVX
C8, C9, C11,
C19
Siemens
Capacitor
C12, C13, C14, 1u0 1206
C15
Capacitor
Capacitor
Capacitor
C17
3.9pF 0603 HQ AVX
06035J3R9BBT
C20, C21
C22, C23
33nF 0402
1nF 0402
Siemens
Siemens
Siemens Aktiengesellschaft
Semiconductor Group
5
5
16.09.98
1998-11-01
HL HF PE GaAs 1 / Fo
CGY 0819
Part Type
Inductor
Inductor
Inductor
Resistor
Resistor
Resistor
Resistor
Transistor
Diode
Position
L1
Description
10uH
Manufacturer
Part Number
Siemens
L2, L3
L4
Air Coil 33nH
8.2nH 0603
680 Ohm 0402
3.9k 0402
68 Ohm 0805
1.0k 0402
BC848B
H. David GmbH PN/BV 1250
TOKO
R1
R2
R3
R4
V1
Siemens
Siemens
Siemens
Siemens
Siemens
V2
BAS40-04W
BCP72
Transistor
IC
V3
IC1
CGY0819
Substrate
FR4,
h=0.2mm,εr=4.5
Evaluation Board:
Vcon Cell
Siemens
Cellular
Dual Band PA
L3
C1
C2
C5
C9
C8
IC1
C11
L2
C16
C10
C12 C14
C13 C15
V3
C23
PCS
R2
CLK
Vaux
Vcon PCS
Vd
Vaux
Vsw
CLK
Siemens Aktiengesellschaft
Semiconductor Group
6
6
16.09.98
1998-11-01
HL HF PE GaAs 1 / Fo
CGY 0819
Typical Performance in Cellular AMPS Operation Mode
AMPS Mode: TG & Id vs. Pin
Vd=3,5V, Iq=300mA, f=836,5 MHz, T=25°C
AMPS Mode: PAE & Pout vs. Pin
Vd=3,5V, Iq=300mA, f=836,5 MHz, T=25°C
60
50
40
30
20
10
0
900
750
600
450
300
150
0
35
30
25
20
15
10
5
70.00
60.00
50.00
40.00
30.00
20.00
10.00
0.00
Pout [dBm]
PAE [%]
TG [dB]
Id [mA]
0
-15 -13 -11 -9 -7 -5 -3 -1
Pin [dBm]
1
3
5
7
-15 -13 -11 -9 -7 -5 -3 -1
Pin [dBm]
1
3
5
7
AMPS Mode: Pout vs. Vd
Iq=300mA, f=836,5 MHz, Pin=8dBm, T=25°C
AMPS Mode: PAE vs. Vd
Iq=300mA, f=836,5 MHz, Pin=8dBm, T=25°C
34
33
32
31
30
58
56
54
52
3
3.2
3.4
3.6
3.8
4
3
3.2
3.4
3.6
3.8
4
Vd [V]
Vd [V]
AMPS Mode: Pout vs. f
Iq=300mA, Vd=3.5V, Pin=8dBm, T=25°C
AMPS Mode: PAE vs. f
Iq=300mA, Vd=3.5V, Pin=8dBm, T=25°C
58
57
56
55
54
53
52
33
32.8
32.6
32.4
32.2
32
31.8
31.6
31.4
31.2
31
820
825
830
835
840
845
850
820
825
830
835
840
845
850
f [MHz]
f [MHz]
Siemens Aktiengesellschaft
Semiconductor Group
7
7
16.09.98
1998-11-01
HL HF PE GaAs 1 / Fo
CGY 0819
Typical Performance in Cellular CDMA Operation Mode:
CDMA Mode: Pout, PAE & Id vs. Pin
CDMA Mode: ACPR & TG vs. Pout
Vd=3,5V, Iq=300mA, f=836,5 MHz, T=25°C
Vd=3,5V, Iq=300mA, f=836,5 MHz, T=25°C
40
35
30
25
20
15
10
5
800
700
600
500
400
300
200
100
0
70
60
50
40
30
20
10
0
30
29
28
27
26
25
24
23
ACP885 [dBc]
ACP1,98 [dBc]
TG [dB]
Pout [dBm]
PAE [%]
Id [mA]
0
-15 -13 -11
-9
-7
-5
-3
-1
1
3
14
16
18
20
22
24
26
28
30
Pin [dBm]
Pout [dBm]
CDMA Mode: ACPR @885kHz Offset vs. f
Vd=3,0V, Pout=27,5dBm, Iq=300mA
CDMA Mode: ACPR @1,98MHz Offset vs. f
Vd=3,0V, Pout=27,5dBm, Iq=300mA
50
49
48
47
46
45
44
43
42
41
40
60
59
58
57
56
55
54
53
52
51
50
820
825
830
835
840
845
850
820
825
830
835
840
845
850
f [MHz]
f [MHz]
CDMA Mode: Gain vs. f
Vd=3,0V, Pout=27,5dBm, Iq=300mA
CDMA Mode: PAE vs. f
Vd=3,0V, Pout=27,5dBm, Iq=300mA
30
29
28
27
26
25
24
23
22
21
20
40
39
38
37
36
35
34
33
32
31
30
820
825
830
835
840
845
850
820
825
830
835
840
845
850
f [MHz]
f [MHz]
Siemens Aktiengesellschaft
Semiconductor Group
8
8
16.09.98
1998-11-01
HL HF PE GaAs 1 / Fo
CGY 0819
CDMA Mode: ACPR @885kHz Offset vs. f
Vd=3,5V, Pout=28,5dBm, Iq=300mA
C DMA Mode: AC PR @1,98MHz Offset vs. f
Vd=3,5V, Pout=28,5dBm, Iq=300mA
50
49
48
47
46
45
44
43
42
41
40
60
59
58
57
56
55
54
53
52
51
50
820
825
830
835
840
845
845
845
850
850
850
820
825
830
835
840
845
845
845
850
f [MHz]
f [MHz]
CDMA Mode: PAE vs. f
Vd=3,5V, Pout=28,5dBm, Iq=300mA
CDMA Mode: Gain vs. f
Vd=3,5V, Pout=28,5dBm, Iq=300mA
30
29
28
27
26
25
24
23
22
21
20
40
39
38
37
36
35
34
33
32
31
30
820
825
830
835
840
820
825
830
835
840
850
f [MHz]
f [MHz]
CDMA Mode: ACPR @885kHz Offset vs. f
Vd=4V, Pout=29,5dBm, Iq=300mA
CDMA Mode: ACPR @1,98MHz Offset vs. f
Vd=4V, Pout=29,5dBm, Iq=300mA
50
49
48
47
46
45
44
43
42
41
40
60
59
58
57
56
55
54
53
52
51
50
820
825
830
835
840
820
825
830
835
840
850
f [MHz]
f [MHz]
Siemens Aktiengesellschaft
Semiconductor Group
9
9
16.09.98
1998-11-01
HL HF PE GaAs 1 / Fo
CGY 0819
CDMA Mode: PAE vs. f
CDMA Mode: Gain vs. f
Vd=4V, Pout=29,5dBm, Iq=300mA
Vd=4V, Pout=29,5dBm, Iq=300mA
30
29
28
27
26
25
24
23
22
21
20
40
39
38
37
36
35
34
33
32
31
30
820
825
830
835
840
845
850
820
825
830
835
840
845
850
f [MHz]
f [MHz]
Typical Performance in Cellular TDMA Operation Mode
TDMA Mode: Pout, PAE & Id vs. Pin
TDMA Mode: ACPR & TG vs. Pout
Vd=3,5V, Iq=300mA, f=836,5 MHz, T=25°C
Vd=3,5V, Iq=300mA, f=836,5 MHz, T=25°C
45
40
35
30
25
20
15
10
5
900
800
700
600
500
400
300
200
100
0
80
70
60
50
40
30
20
10
0
30
29
28
27
26
25
24
23
22
Pout [dBm]
PAE [%]
Id [mA]
Padj [dBc]
Palt [dBc]
TG [dB]
0
-15 -13 -11 -9
-7
-5
-3
-1
1
3
5
14
16
18
20
22
24
26
28
30
Pin [dBm]
Pout [dBm]
TDMA Mode: Padj vs. f
Vd=3,0V, Pout=29dBm, Iq=300mA
TDMA Mode: Palt vs. f
Vd=3,0V, Pout=29dBm, Iq=300mA
35
55
34
33
32
31
30
29
28
27
26
25
54
53
52
51
50
49
48
47
46
45
820
825
830
835
840
845
850
820
825
830
835
840
845
850
f [MHz]
f [MHz]
Siemens Aktiengesellschaft
Semiconductor Group
10
10
16.09.98
1998-11-01
HL HF PE GaAs 1 / Fo
CGY 0819
TDMA Mode: Gain vs. f
TDMA Mode: PAE vs. f
Vd=3V, Pout=29dBm, Iq=300mA
Vd=3V, Pout=29dBm, Iq=300mA
30
29
28
27
26
25
24
23
22
21
20
45
44
43
42
41
40
39
38
37
36
35
820
825
830
835
840
845
845
845
850
850
850
820
825
830
835
840
845
845
845
850
f [MHz]
f [MHz]
TDMA Mode: Padj vs. f
Vd=3,5V, Pout=30dBm, Iq=300mA
TDMA Mode: Palt vs. f
Vd=3,5V, Pout=30dBm, Iq=300mA
35
34
33
32
31
30
29
28
27
26
25
55
54
53
52
51
50
49
48
47
46
45
820
825
830
835
840
820
825
830
835
840
850
f [MHz]
f [MHz]
TDMA Mode: PAE vs. f
Vd=3,5V, Pout=30dBm, Iq=300mA
TDMA Mode: Gain vs. f
Vd=3,5V, Pout=30dBm, Iq=300mA
30
29
28
27
26
25
24
23
22
21
20
45
44
43
42
41
40
39
38
37
36
35
820
825
830
835
840
820
825
830
835
840
850
f [MHz]
f [MHz]
Siemens Aktiengesellschaft
Semiconductor Group
11
11
16.09.98
1998-11-01
HL HF PE GaAs 1 / Fo
CGY 0819
TDMA Mode: Padj vs. f
TDMA Mode: Palt vs. f
Vd=4V, Pout=31dBm, Iq=300mA
Vd=4V, Pout=31dBm, Iq=300mA
35
34
33
32
31
30
29
28
27
26
25
55
54
53
52
51
50
49
48
47
46
45
820
825
830
835
840
845
850
820
825
830
835
840
845
850
f [MHz]
f [MHz]
TDMA Mode: Gain vs. f
Vd=4V, Pout=31dBm, Iq=300mA
TDMA Mode: PAE vs. f
Vd=4V, Pout=31dBm, Iq=300mA
30
29
28
27
26
25
24
23
22
21
20
45
44
43
42
41
40
39
38
37
36
35
820
825
830
835
840
845
850
820
825
830
835
840
845
850
f [MHz]
f [MHz]
Typical Performance in PCS CDMA Operation Mode:
CDMA Mode: Pout, PAE& Id vs. Pin
CDMA Mode: ACPR & TG vs. Pout
Vd=3,5V, Iq=250mA, f=1880 MHz, T=25°C
Vd=3,5V, Iq=250mA, f=1880 MHz, T=25°C
40
35
30
25
20
15
10
5
800
700
600
500
400
300
200
100
0
80
70
60
50
40
30
20
10
0
26
25
24
23
22
21
20
19
18
ACP1,25 [dBc]
ACP1,98 [dBc]
TG [dB]
Pout [dBm]
PA E [%]
Id [mA]
0
-10
-8
-6
-4
-2
0
2
4
6
8
14
16
18
20
22
24
26
28
30
Pin [dBm]
Pout [dBm]
Siemens Aktiengesellschaft
Semiconductor Group
12
12
16.09.98
1998-11-01
HL HF PE GaAs 1 / Fo
CGY 0819
CDMA Mode: ACPR @1,25MHz Offset vs. f
Vd=3,0V, Pout=28dBm, Iq=250mA
CDMA Mode: ACPR @1,98MHz Offset vs. f
Vd=3,0V, Pout=28dBm, Iq=250mA
50
49
48
47
46
45
44
43
42
41
40
60
59
58
57
56
55
54
53
52
51
50
1850
1860
1870
1880
1890
1900
1910
1910
1910
1850
1860
1870
1880
1890
1900
1910
f [MHz]
f [MHz]
CDMA Mode: Gain vs. f
Vd=3,0V, Pout=28dBm, Iq=250mA
CDMA Mode: PAEvs. f
Vd=3,0V, Pout=28dBm, Iq=250mA
25
24
23
22
21
20
19
18
17
16
15
42
40
38
36
34
32
30
1850
1860
1870
1880
1890
1900
1850
1860
1870
1880
1890
1900
1910
f [MHz]
f [MHz]
CDMA Mode: ACPR @1,25MHz Offset vs. f
Vd=3,5V, Pout=29dBm, Iq=250mA
CDMA Mode: ACPR @1,98MHz Offset vs. f
Vd=3,5V, Pout=29dBm , Iq=250mA
50
49
48
47
46
45
44
43
42
41
40
60
59
58
57
56
55
54
53
52
51
50
1850
1860
1870
1880
1890
1900
1850
1860
1870
1880
1890
1900
1910
f [MHz]
f [MHz]
Siemens Aktiengesellschaft
Semiconductor Group
13
13
16.09.98
1998-11-01
HL HF PE GaAs 1 / Fo
CGY 0819
CDMA Mode: PAEvs. f
CDMA Mode: Gain vs. f
Vd=3,5V, Pout=29dBm, Iq=250mA
Vd=3,5V, Pout=29dBm, Iq=250mA
40
39
38
37
36
35
34
33
32
31
30
25
24
23
22
21
20
19
18
17
16
15
1850
1860
1870
1880
1890
1900
1910
1910
1910
1850
1860
1870
1880
1890
1900
1910
f [MHz]
f [MHz]
CDMA Mode: ACPR @1,25MHz Offset vs. f
Vd=4V, Pout=30dBm , Iq=250mA
CDMA Mode: ACPR @1,98MHz Offset vs. f
Vd=4V, Pout=30dBm, Iq=250mA
50
49
48
47
46
45
44
43
42
41
40
60
59
58
57
56
55
54
53
52
51
50
1850
1860
1870
1880
1890
1900
1850
1860
1870
1880
1890
1900
1910
f [MHz]
f [MHz]
CDMA Mode: PAE vs. f
Vd=4V, Pout=30dBm , Iq=250mA
CDMA Mode: Gain vs. f
Vd=4V, Pout=30dBm, Iq=250mA
40
39
38
37
36
35
34
33
32
31
30
25
24
23
22
21
20
19
18
17
16
15
1850
1860
1870
1880
1890
1900
1850
1860
1870
1880
1890
1900
1910
f [MHz]
f [MHz]
Siemens Aktiengesellschaft
Semiconductor Group
14
14
16.09.98
1998-11-01
HL HF PE GaAs 1 / Fo
CGY 0819
Typical Performance in PCS TDMA Operation Mode:
TDMA Mode: Pout, PAE& Id vs. Pin
TDMA Mode: ACPR & TG vs. Pout
Vd=3,5V, Iq=250mA, f=1880 MHz, T=25°C
Vd=3,5V, Iq=250mA, f=1880 MHz, T=25°C
70
25
24
23
22
21
20
19
18
40
35
30
25
20
15
10
5
800
700
600
500
400
300
200
100
0
60
50
40
30
20
10
0
Pout [dBm]
PA E [%]
Id [mA]
Padj [dBc]
Palt [dBc]
TG [dB]
0
-10
-8
-6
-4
-2
0
2
4
6
8
14
16
18
20
22
24
26
28
30
Pin [dBm]
Pout [dBm]
TDMA Mode: Padj vs. f
Vd=3,0V, Pout=28dBm, Iq=250mA
TDMA Mode: Palt vs. f
Vd=3,0V, Pout=28dBm , Iq=250mA
35
55
34
33
32
31
30
29
28
27
26
25
54
53
52
51
50
49
48
47
46
45
1850
1860
1870
1880
1890
1900
1910
1850
1860
1870
1880
1890
1900
1910
f [MHz]
f [MHz]
TDMA Mode: Gain vs. f
Vd=3V, Pout=28dBm, Iq=250m A
TDMA Mode: PAEvs. f
Vd=3V, Pout=28dBm, Iq=250mA
45
25
44
43
42
41
40
39
38
37
36
35
24
23
22
21
20
19
18
17
16
15
1850
1860
1870
1880
1890
1900
1910
1850
1860
1870
1880
1890
1900
1910
f [MHz]
f [MHz]
Siemens Aktiengesellschaft
Semiconductor Group
15
15
16.09.98
1998-11-01
HL HF PE GaAs 1 / Fo
CGY 0819
TDMA Mode: Padj vs. f
TDMA Mode: Palt vs. f
Vd=3,5V, Pout=29dBm, Iq=250mA
Vd=3,5V, Pout=29dBm, Iq=250mA
35
34
33
32
31
30
29
28
27
26
25
55
54
53
52
51
50
49
48
47
46
45
1850
1860
1870
1880
1890
1900
1900
1900
1910
1910
1910
1850
1860
1870
1880
1890
1900
1900
1900
1910
f [MHz]
f [MHz]
TDMA Mode: PAE vs. f
Vd=3,5V, Pout=29dBm, Iq=250mA
TDMA Mode: Gain vs. f
Vd=3,5V, Pout=29dBm , Iq=250mA
45
44
43
42
41
40
39
38
37
36
35
25
24
23
22
21
20
19
18
17
16
15
1850
1860
1870
1880
1890
1850
1860
1870
1880
1890
1910
f [MHz]
f [MHz]
TDMA Mode: Padj vs. f
Vd=4V, Pout=30dBm, Iq=250mA
TDMA Mode: Palt vs. f
Vd=4V, Pout=30dBm, Iq=250mA
35
34
33
32
31
30
29
28
27
26
25
55
54
53
52
51
50
49
48
47
46
45
1850
1860
1870
1880
1890
1850
1860
1870
1880
1890
1910
f [MHz]
f [MHz]
Siemens Aktiengesellschaft
Semiconductor Group
16
16
16.09.98
1998-11-01
HL HF PE GaAs 1 / Fo
CGY 0819
TDMA Mode: Gain vs. f
TDMA Mode: PAEvs. f
Vd=4V, Pout=30dBm, Iq=250m A
Vd=4V, Pout=30dBm, Iq=250mA
25
24
23
22
21
20
19
18
17
16
15
43
42
41
40
39
38
37
36
35
34
33
1850
1860
1870
1880
1890
1900
1910
1850
1860
1870
1880
1890
1900
1910
f [MHz]
f [MHz]
Siemens Aktiengesellschaft
Semiconductor Group
17
17
16.09.98
1998-11-01
HL HF PE GaAs 1 / Fo
CGY 0819
Published by Siemens AG, Bereich Bauelemente, Vertrieb, Produkt-Information,
Balanstraße 73, D-81541 München
copyright Siemens AG 1996. All Rights Reserved
As far as patents or other rights of third parties are concerned, liability is only assumed for
components per se, not for applications, processes and circuits implemented within
components or assemblies.
The information describes the type of component and shall not be considered as assured
characteristics.
Terms of delivery and rights to change design reserved.
For questions on technology, delivery and prices please contact the Offices of
Semiconductor Group in Germany or the Siemens Companies and Representatives world-
wide (see address list).
Due to technical requirements components may contain dangerous substances. For
information on the type in question please contact your nearest Siemens Office,
Semiconductor Group.
Siemens AG is an approved CECC manufacturer
Siemens Aktiengesellschaft
Semiconductor Group
18
18
16.09.98
1998-11-01
HL HF PE GaAs 1 / Fo
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