HSBD376-6 [CLAIREX]
Transistor;
| 型号： | HSBD376-6 |
| 厂家： | 
CLAIREX TECHNOLOGIES, INC |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：251K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PNP S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
HSBD376
█ APPLICATIONS
Medium Power Linear switching Applications
█ ABSOLUTE MAXIMUM RATINGS（Ta=25℃）
Tstg— — Storage Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -55~150℃
Tj— — Junction Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 150℃
PC— — Collector Dissipation（Tc=25℃）⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 25W
VCBO — — Collector-Base Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -50V
VCEO— — Collector-Emitter Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -45V
VEBO— — Emitter-Base Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -5V
IC— — Collector Curren（t Pulse）⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -3A
IC— — Collector Current（DC）⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -2A
Ib— — Base Current⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -1A
1―Emitter, E
2―Collector，C
3―Base，B
█ ELECTRICAL CHARACTERISTICS（Ta=25℃）
Symbol
Characteristics
Collector Cut-off Current
Emitter Cut-off Current
Min
Typ
Max
Unit
Test Conditions
VCB=-45V, IE=0
ICBO
IEBO
-2 μA
-100 μA
375
VEB=-5V, IC=0
*HFE（1） DC Current Gain
VCE=-2V, IC=-150mA
VCE=-2V, IC=-1A
IC=-1A, IB=-0.1A
VCE=-2V, IC=-1A
IC=-100mA, IB=0
40
20
*HFE（2） DC Current Gain
*VCE(sat) Collector- Emitter Saturation Voltage
-1
V
*VBE(on)
Base-Emitter On Voltage
-1.5 V
VCEO(sus) Collector-Emitter Sustaining Voltage
-45
-50
V
V
BVCBO
tON
Collector-Base Breakdown Voltage
Turn-On Time
IC=-100μA, IE=0
VCC=-30V, IC=-0.5A
50
nS
nS
tOFF
Turn-Off Time
IB1=-IB2=-0.05A
500
* Pulse Test:PW=350μS,Duty Cycle=2% Pulsed
█ hFE(3) Classification
Cassification
6
10
16
25
hFE(3)
40~100
63~160
100~250
150~375
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