AON3611 [AOS]
30V Complementary MOSFET; 30V互补MOSFET
| 型号： | AON3611 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 30V Complementary MOSFET |
| 文件： | 总9页 (文件大小：451K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AON3611
30V Complementary MOSFET
General Description
Product Summary
N-channel
P-channel
The AON3611 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. The
complementary MOSFETs may be used in inverter and
other applications.
VDS (V) = 30V
ID = 5A
VDS (V) = -30V
ID = -6A
(VGS = ±10V)
(VGS = ±10V)
(VGS = ±4.5V)
RDS(ON) < 50mΩ
RDS(ON) < 70mΩ
RDS(ON) < 38mΩ
RDS(ON) < 62mΩ
D1
D2
DFN 3x3
Top View
Bottom View
Top View
D2
D2
D1
S2
G2
S1
G1
G1
G2
D1
S2
S1
P-channel
N-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max N-channel
Max P-channel
Units
Drain-Source Voltage
VDS
30
-30
V
Gate-Source Voltage
VGS
±20
±20
-6
V
A
TA=25°C
TA=70°C
5
3.8
Continuous Drain
Current
Pulsed Drain Current C
ID
-4.7
IDM
PD
20
-30
TA=25°C
TA=70°C
2.1
2.5
W
°C
Power Dissipation B
1.3
1.6
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
-55 to 150
Thermal Characteristics: N-channel
Parameter
Symbol
Typ
50
Max
60
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t
≤ 10s
RθJA
Steady-State
Steady-State
80
98
RθJL
48
58
Thermal Characteristics: P-channel
Parameter
Symbol
Typ
40
Max
50
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
t
≤ 10s
RθJA
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
Steady-State
Steady-State
70
85
RθJL
38
46
Rev 0: Jan. 2012
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Page 1 of 9
AON3611
N-channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
30
V
VDS=30V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
VDS=0V, VGS=±20V
VDS=VGS, ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=5A
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±100
2.5
nA
V
VGS(th)
ID(ON)
1.5
20
2
A
40
64
50
80
70
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
VGS=4.5V, ID=3A
53
mΩ
S
VDS=5V, ID=5A
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
11
IS=1A,VGS=0V
0.79
1
V
Maximum Body-Diode Continuous Current
1.5
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
170
35
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
23
VGS=0V, VDS=0V, f=1MHz
1.7
3.5
5.3
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
4.05
2
10
6
nC
nC
nC
nC
ns
Qg(4.5V) Total Gate Charge
VGS=10V, VDS=15V, ID=5A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
0.55
1
4.5
1.5
18.5
15.5
VGS=10V, VDS=15V, RL=3Ω,
RGEN=3Ω
ns
tD(off)
tf
ns
ns
trr
IF=5A, dI/dt=100A/µs
IF=5A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
7.5
2.5
ns
Qrr
nC
A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RqJA is the sum of the thermal impedance from junction to lead RqJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: Jan. 2012
www.aosmd.com
Page 2 of 9
AON3611
N-channel TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
10
5
10
8
10V
VDS=5V
4V
4.5V
6
3.5V
4
125°C
25°C
2
VGS=3V
0
0
1
2
3
4
5
0
1
2
3
4
5
VGS(Volts)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
Figure 2: Transfer Characteristics (Note E)
80
60
40
20
0
2
1.8
1.6
1.4
1.2
1
VGS=10V
ID=5A
VGS=4.5V
VGS=4.5V
VGS=10V
ID=3A
0.8
0
25
50
75
100
125
150
175
0
2
4
6
8
10
ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
120
100
80
60
40
20
0
1.0E+01
ID=5A
1.0E+00
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
25°C
25°C
0.0
0.2
0.4
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
1.2
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: Jan. 2012
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Page 3 of 9
AON3611
N-channel TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
300
250
200
150
100
50
VDS=15V
ID=5A
8
Ciss
6
4
Coss
2
Crss
0
0
0
1
2
3
4
5
0
5
10
15
20
25
30
Qg (nC)
VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100
10
1
100
10
TA=25°C
10µs
RDS(ON)
limited
100µs
1
1ms
10ms
100ms
10s
TJ(Max)=150°C
TA=25°C
0.1
0.01
DC
0.01
0.1
1
10
100
0.00001
0.001
0.1
10
1000
VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
D=Ton/T
In descending order
TJ,PK=TA+PDM.ZθJC.RθJC
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=98°C/W
1
0.1
PD
0.01
0.001
Single Pulse
Ton
T
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: Jan. 2012
www.aosmd.com
Page 4 of 9
AON3611
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
IF
Isd
Vgs
dI/dt
IRM
+
Vdd
VDC
Vdd
-
Vds
Rev 0: Jan. 2012
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Page 5 of 9
AON3611
P-channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
ID=-250 A, VGS=0V
Min
Typ
Max Units
STATIC PARAMETERS
µ
BVDSS
Drain-Source Breakdown Voltage
-30
V
VDS=-30V, VGS=0V
-1
IDSS
Zero Gate Voltage Drain Current
µ
A
TJ=55°C
-5
VDS=0V, VGS=±20V
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±100
-2.4
nA
V
VGS(th)
ID(ON)
VDS=VGS, ID=-250µA
-1.4
-30
-1.9
VGS=-10V, VDS=-5V
VGS=-10V, ID=-6A
A
30
45
38
57
62
m
Ω
Ω
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
VGS=-4.5V, ID=-4A
46
m
V
DS=-5V, ID=-6A
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
13
S
IS=-1A,VGS=0V
-0.76
-1
-2
V
A
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
520
100
65
pF
pF
pF
Ω
VGS=0V, VDS=-15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
VGS=-10V, VDS=-15V, ID=-6A
VGS=-10V, VDS=-15V, RL=2.5
7.5
11.5
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
9.2
4.6
1.6
2.2
7.5
5.5
19
20
10
nC
nC
nC
nC
ns
Qg(4.5V) Total Gate Charge
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Ω
,
ns
RGEN=3
Ω
tD(off)
tf
ns
7
ns
trr
IF=-6A, dI/dt=100A/
IF=-6A, dI/dt=100A/
µ
µ
s
s
11
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
5.3
nC
A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RqJA is the sum of the thermal impedance from junction to lead RqJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: Jan. 2012
www.aosmd.com
Page 6 of 9
AON3611
P-channel TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
30
-10V
-8V
-5V
VDS=-5V
25
20
15
10
5
25
20
15
10
5
-4.5V
-4V
125°C
25°C
VGS=-3.5V
0
0
1
2
3
4
5
6
0
1
2
3
4
5
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
100
80
60
40
20
0
1.8
1.6
1.4
1.2
1
VGS=-10V
ID=-6A
VGS=-4.5V
=-4.5V
VGS
ID=-4A
VGS=-10V
0.8
0
25
50
75
100
125
150
175
0
2
4
6
8
10
-ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
120
100
80
60
40
20
0
1.0E+02
ID=-6A
1.0E+01
1.0E+00
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
25°C
25°C
0.0
0.2
0.4
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
1.2
2
4
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: Jan. 2012
www.aosmd.com
Page 7 of 9
AON3611
P-channel TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
800
700
600
500
400
300
200
100
0
VDS=-15V
ID=-6A
8
Ciss
6
4
Coss
2
Crss
0
0
2
4
6
8
10
0
5
10
15
20
25
30
Qg (nC)
-VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100
10
1
100.0
10.0
1.0
TA=25°C
10µs
RDS(ON)
limited
100µs
1ms
10ms
100ms
10s
TJ(Max)=150°C
TA=25°C
0.1
DC
0.0
0.01
0.1
1
10
100
0.00001
0.001
0.1
10
1000
-VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=85°C/W
0.1
PD
0.01
0.001
Single Pulse
0.001
Ton
T
0.00001
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: Jan. 2012
www.aosmd.com
Page 8 of 9
AON3611
Gate Charge Test Circuit & Waveform
Vgs
Qg
-
-10V
-
VDC
Qgs
Qgd
+
Vds
VDC
+
DUT
Vgs
Ig
Charge
R esistive Sw itching Test C ircuit & W aveform s
R L
V ds
to ff
to n
t
f
td(o ff)
td(o n)
t
r
Vgs
-
90%
10%
D U T
V dd
Vgs
V DC
+
R g
V gs
V ds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
EAR= 1/2 LIA2R
L
Vds
Id
Vgs
Vds
DSS
Vgs
Vdd
VDC
+
Id
Rg
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
trr
Vds -
L
-Isd
-IF
Isd
Vgs
dI/dt
-IRM
+
Vdd
VDC
Vdd
-
-Vds
Ig
Rev 0: Jan. 2012
www.aosmd.com
Page 9 of 9
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