AO4800B [AOS]
Dual N-Channel Enhancement Mode Field Effect Transistor; 双N沟道增强型场效应晶体管
| 型号： | AO4800B |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | Dual N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总4页 (文件大小：110K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO4800B, AO4800BL
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO4800B/L uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. The two
MOSFETs make a compact and efficient switch and
synchronous rectifier combination for use in buck
converters. Standard Product AO4800B/L is Pb-free
(meets ROHS & Sony 259 specifications).
VDS (V) = 30V
ID = 6.9A (VGS = 10V)
RDS(ON) < 27mΩ (VGS = 10V)
RDS(ON) < 32mΩ (VGS = 4.5V)
RDS(ON) < 50mΩ (VGS = 2.5V)
UIS TESTED!
Rg,Ciss,Coss,Crss Tested!
D2
D1
S1
1
2
3
4
8
7
6
5
S2
G2
S1
G1
D2
D2
D1
D1
G2
G1
SOIC-8
S2
Absolute Maximum Ratings T =25°C unless otherwise noted
A
Parameter
Symbol
VDS
Maximum
30
Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current AF
V
V
VGS
±12
TA=25°C
TA=70°C
6.9
5.8
A
ID
Pulsed Drain CurrentB
IDM
40
TA=25°C
TA=70°C
1.9
PD
W
Power Dissipation
Avalanche CurrentB
1.2
IAR
A
12
Repetitive avalanche energy 0.3mHB
EAR
mJ
°C
22
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
55
Max
62.5
110
48
Units
°C/W
°C/W
°C/W
Maximum Junction-to-AmbientAF
t ≤ 10s
RθJA
Maximum Junction-to-AmbientA
Maximum Junction-to-LeadC
90
Steady-State
Steady-State
RθJL
40
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4800B/L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
30
V
VDS=24V, VGS=0V
0.002
1
5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
V
V
V
DS=0V, VGS= ±12V
DS=VGS ID=250µA
GS=4.5V, VDS=5V
GS=10V, ID=6.9A
100
1.5
nA
V
VGS(th)
ID(ON)
0.7
40
1
A
20
25
27
40
32
50
mΩ
TJ=125°C
RDS(ON)
Static Drain-Source On-Resistance
mΩ
mΩ
VGS=4.5V, ID=6A
23
VGS=2.5V, ID=5A
VDS=5V, ID=5A
IS=1A,VGS=0V
34
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
10
26
S
V
A
0.71
1
Maximum Body-Diode Continuous Current
4.5
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
900
88
1100
pF
pF
pF
Ω
V
GS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
65
V
GS=0V, VDS=0V, f=1MHz
0.95
1.5
12
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
10
1.8
3.75
3.2
3.5
21.5
2.7
16.8
8
nC
nC
nC
ns
ns
ns
ns
VGS=4.5V, VDS=15V, ID=8.5A
VGS=10V, VDS=15V, RL=1.8Ω,
RGEN=6Ω
tD(off)
tf
trr
IF=5A, dI/dt=100A/µs
IF=5A, dI/dt=100A/µs
20
12
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
nC
Qrr
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in
any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve
provides a single pulse rating.
Rev 1 : Dec 2007
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4800B/L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
50
40
30
20
10
0
20
16
12
8
10V
VDS=5V
4.5V
3V
125°C
2.5V
25°C
4
VGS=2V
0
0
1
2
3
4
5
0
0.5
1
1.5
2
2.5
3
VDS (Volts)
VGS(Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
60
50
40
30
20
10
1.7
1.5
1.3
1.1
0.9
0.7
0.5
VGS=4.5V
VGS=2.5V
VGS=10V
VGS=2.5V
VGS=4.5V
VGS=10V
VGS=2.5V
VGS=4.5
VGS=10V
0
5
10
15
20
-50 -25
0
25 50 75 100 125 150 175
ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Figure 4: On-Resistance vs. Junction
Temperature
100
90
80
70
60
50
40
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
125°C
ID=6.9A
125°C
25°C
1.0E-04
25°CG
30
1.0E-05
20
1.0E-06
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
VSD (Volts)
VGS (Volts)
Figure 6: Body-Diode Characteristics
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4800B/L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1400
5
4
3
2
1
0
VDS=15V
ID=6.9A
1200
1000
800
600
400
200
0
Ciss
Crss
Coss
0
2
4
6
8
10
12
0
5
10
15
DS (Volts)
20
25
30
Qg (nC)
Figure 7: Gate-Charge Characteristics
V
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
50
TJ(Max)=150°C
TA=25°C
TJ(Max)=150°C
TA=25°C
RDS(ON)
limited
40
30
20
10
0
10µs
1ms
10ms
DC
1
10s
10
1s
0.1
0.0001 0.001 0.01
0.1
1
10
100
1000
0.1
100
Pulse Width (s)
VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
P
D
0.1
G
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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