AO4454 [AOS]
100V N-Channel MOSFET; 100V N沟道MOSFET
| 型号： | AO4454 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 100V N-Channel MOSFET |
| 文件： | 总6页 (文件大小：281K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO4454
100V N-Channel MOSFET
SDMOS TM
General Description
Product Summary
The AO4454 is fabricated with SDMOSTM trench
technology that combines excellent RDS(ON) with low gate
charge.The result is outstanding efficiency with controlled
switching behaviar. This universal technology is well
suited for PWM, load switching and general purpose
applications.
VDS
100V
ID (at VGS=10V)
6.5A
R
DS(ON) (at VGS=10V)
< 36mΩ
< 43mΩ
RDS(ON) (at VGS = 7V)
100% UIS Tested
100% Rg Tested
SOIC-8
D
Top View
Bottom View
D
D
D
D
G
G
S
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
100
Units
Drain-Source Voltage
Gate-Source Voltage
V
V
VGS
±25
TA=25°C
TA=70°C
6.5
Continuous Drain
Current
ID
5.3
A
Pulsed Drain Current C
IDM
46
Avalanche Current C
IAS, IAR
EAS, EAR
28
A
Avalanche energy L=0.1mH C
TA=25°C
Power Dissipation B
39
3.1
mJ
PD
W
°C
TA=70°C
2
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
31
Max
40
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
Steady-State
Steady-State
59
75
RθJL
16
24
Rev1: November 2010
www.aosmd.com
Page 1 of 6
AO4454
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
100
V
VDS=100V, VGS=0V
10
µA
50
IDSS
Zero Gate Voltage Drain Current
TJ=55°C
V
DS=0V, VGS= ±25V
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
100
4
nA
V
VGS(th)
ID(ON)
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=6.5A
2.8
46
3.4
A
30
56
36
67
43
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
VGS=7V, ID=6A
35.5
20
mΩ
S
VDS=5V, ID=6.5A
IS=1A,VGS=0V
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
0.68
1
4
V
Maximum Body-Diode Continuous Current
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
950
77
1180 1450
pF
pF
pF
Ω
VGS=0V, VDS=50V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
110
36
145
50
21
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=50V, ID=6.5A
VGS=10V, VDS=50V, RL=6.7Ω,
0.35
0.7
1.05
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
15
5.5
3.5
19
7
23
8.5
9
nC
nC
nC
ns
ns
ns
ns
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
6.3
10
7.2
15
7
RGEN=3Ω
tD(off)
tf
trr
IF=6.5A, dI/dt=500A/µs
IF=6.5A, dI/dt=500A/µs
11
35
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
16
50
21
65
ns
Qrr
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 1: November 2010
www.aosmd.com
Page 2 of 6
AO4454
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
50
40
30
20
10
0
60
40
20
0
10V
VDS=5V
8V
7V
125°C
6V
25°C
7
VGS=5V
4
3
4
5
6
8
9
0
1
2
3
5
VGS(Volts)
VDS (Volts)
Figure 2: Transfer Characteristics (Note E)
Fig 1: On-Region Characteristics (Note E)
60
2.2
2
55
50
45
40
35
30
25
20
VGS=10V
ID=6.5A
1.8
1.6
1.4
1.2
1
VGS=7V
VGS=10V
VGS=4.5V
ID=6A
0.8
0
25
50
75
100
125
150
175
0
5
10
15
20
25
30
ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
68
60
52
44
36
28
20
1.0E+02
1.0E+01
ID=6.5A
125°C
1.0E+00
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
25°C
25°C
0.0
0.2
0.4
0.6
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.8
1.0
1.2
6
7
8
9
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 1: November 2010
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Page 3 of 6
AO4454
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1600
10
1400
1200
1000
800
600
400
200
0
VDS=50V
ID=6.5A
Ciss
8
6
4
Crss
2
Coss
0
0
10 20 30 40 50 60 70 80 90 100
0
5
10
g (nC)
15
20
Q
VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
1000.0
100.0
10.0
1.0
100
RDS(ON)
limited
10µs
100µs
TA=100°C
TA=25°C
1ms
TJ(Max)=150°C
10ms
10s
0.1
TA=150°C
TA=25°C
DC
TA=125°C
0.0
10
0.01
0.1
1
10
100
1000
VDS (Volts)
0.000001
0.00001
0.0001
Time in avalanche, tA (s)
Figure 10: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 9: Single Pulse Avalanche capability (Note
C)
10000
TA=25°C
1000
100
10
1
0.00001
0.001
0.1
Pulse Width (s)
10
1000
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)
Rev 1: November 2010
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Page 4 of 6
AO4454
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
In descending order
D=Ton/T
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
1
0.1
RθJA=75°C/W
PD
0.01
Single Pulse
0.001
Ton
T
0.001
0.00001
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
150
120
90
60
30
0
30
25
20
15
10
5
24
22
20
18
16
14
12
10
8
6
4
2
0
3
125ºC
di/dt=800A/µs
di/dt=800A/µs
125ºC
2.5
2
25ºC
25ºC
trr
1.5
1
Qrr
125ºC
125ºC
Irm
25ºC
25ºC
20
0.5
S
0
0
0
5
10
15
20
25
30
0
5
10
15
25
30
I
S (A)
IS (A)
Figure 13: Diode Reverse Recovery Charge and Peak
Current vs. Conduction Current
Figure 14: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
150
30
25
20
15
10
5
30
27
24
21
18
15
12
9
2.5
2
125ºC
25ºC
Is=20A
trr
Is=20A
120
90
60
30
0
125ºC
1.5
1
25ºC
125ºC
25ºC
Qrr
25ºC
125º
6
0.5
0
S
Irm
3
0
0
0
200
400
600
800
1000
0
200
400
600
800
1000
di/dt (A/µs)
di/dt (A/µs)
Figure 15: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
Figure 16: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
Rev 1: November 2010
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Page 5 of 6
AO4454
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
Rev 1: November 2010
www.aosmd.com
Page 6 of 6
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