AO4456 [FREESCALE]
N-Channel 30-V (D-S) MOSFET High performance trench technology; N通道30 -V （ DS ） MOSFET高性能沟道技术
| 型号： | AO4456 |
| 厂家： | 
Freescale |
| 描述： | N-Channel 30-V (D-S) MOSFET High performance trench technology |
| 文件： | 总3页 (文件大小：291K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Freescale
AO4456/MC4456
N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
PRODUCT SUMMARY
VDS (V)
rDS(on) m(
Ω
)
ID (A)
18.6
6 @ VGS = 4.5V
8 @ VGS = 2.5V
30
16.1
•
•
Low rDS(on) provides higher efficiency and
extends battery life
8
1
2
7
6
5
Low thermal impedance copper leadframe
SOIC-8 saves board space
3
4
•
•
Fast switching speed
High performance trench technology
o
ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED)
Parameter Symbol Maximum Units
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
30
12
V
TA=25oC
TA=70oC
18.6
15.7
60
Continuous Drain Currenta
ID
A
Pulsed Drain Currentb
Continuous Source Current (Diode Conduction)a
Power Dissipationa
IDM
IS
A
2.9
3.1
2.2
TA=25oC
TA=70oC
PD
W
oC
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Units
oC/W
oC/W
t <= 10 sec
Steady State
40
Maximum Junction-to-Ambienta
RθJA
80
Notes
a.
b.
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature
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AO4456/MC4456
SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED)
Limits
Unit
Parameter
Symbol
Test Conditions
Min Typ Max
Static
Gate-Thres hold Voltage
VGS(th)
IGSS
VDS = VGS, ID = 250 uA
VDS = 0 V, VGS = 12 V
1
V
100
1
Gate-Body Leakage
nA
VDS = 24 V, VGS = 0
V
Zero Gate Voltage Drain Current
On-State Drain CurrentA
IDSS
uA
A
VDS = 24 V, VGS = 0 V, TJ = 55oC
5
I
V
= 5 V, V = 10
V
30
D(on)
DS
VGS = 4.5 V, IDGS= 18.6
VGS = 2.5 V, ID = 16.1
A
A
6
8
Drain-Source On-ResistanceA
rDS(on)
mΩ
Forward TranconductanceA
Diode Forward Voltage
g
V
= 15 V, I = 18.6
A
90
S
fs
DS
D
V
SD
IS = 2.3 A, VGS = 0 V
0.7
V
Dynamicb
Total Gate Charge
Qg
Qgs
Qgd
td(on)
tr
25
6
VDS = 15 V, VGS = 4.5 V,
ID = 18.6
nC
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
A
9
20
13
82
43
Ris
e
Time
VDD = 15 V, RL = 6 Ω , ID = 1 A,
VGEN = 10
nS
V
Turn-Off Delay Time
Fall-Time
td(off)
tf
Notes
a.
Pulse test: PW <= 300us duty cycle <= 2%.
Guaranteed by design, not subject to production testing.
b.
FREESCALE reserves the right to make changes without further notice to any products herein. FREESCALE makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does FREESCALE assume any liability arising out of the
application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages. “Typical” parameters which may be provided in FREESCALE data sheets and/or specifications can and do vary in different
applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. FREESCALE does not convey any license under its patent rights nor the rights of others.
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AO4456/MC4456
Package Information
SO-8: 8LEAD
H x 45°
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