AO4459 [AOS]
P-Channel Enhancement Mode Field Effect Transistor; P沟道增强型场效应晶体管
| 型号： | AO4459 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | P-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总4页 (文件大小：127K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO4459
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO4459 uses advanced trench technology to provide
excellent RDS(ON) with low gate charge. This device is suitable
for use as a load switch or in PWM applications. Standard
product AO4459 is Pb-free (meets ROHS & Sony 259
specifications). AO4459L is a Green Product ordering
option. AO4459 and AO4459L are electrically identical.
VDS (V) = -30V
ID = -6.5A
(VGS = -10V)
RDS(ON) < 46mΩ (VGS = -10V)
RDS(ON) < 72mΩ (VGS = -4.5V)
D
S
SOIC-8
Top View
S
S
S
G
D
D
D
D
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
-30
Units
V
V
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current A
VGS
±20
TA=25°C
TA=70°C
-6.5
ID
-5.3
A
Pulsed Drain Current B
IDM
-30
TA=25°C
TA=70°C
3.1
PD
W
Power Dissipation A
2
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150
°C
Thermal Characteristics
Parameter
Symbol
Typ
33
62
Max
40
75
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
t ≤ 10s
Steady-State
Steady-State
RθJA
Maximum Junction-to-Lead C
RθJL
18
24
Alpha & Omega Semiconductor, Ltd.
AO4459
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=-250µA, VGS=0V
-30
V
VDS=-24V, VGS=0V
-1
-5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
V
V
V
DS=0V, VGS=±20V
DS=VGS ID=-250µA
GS=-10V, VDS=-5V
GS=-10V, ID=-6.5A
±100
-2.5
nA
V
VGS(th)
ID(ON)
-1.5
-30
-1.85
A
38
53
46
68
72
mΩ
mΩ
RDS(ON)
TJ=125°C
Static Drain-Source On-Resistance
VGS=-4.5V, ID=-5A
58
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
VDS=-5V, ID=-6.5A
IS=-1A,VGS=0V
11
S
V
A
-0.78
-1
Maximum Body-Diode Continuous Current
-3.5
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
668
126
92
830
pF
pF
pF
Ω
V
GS=0V, VDS=-15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
V
GS=0V, VDS=0V, f=1MHz
6
9
SWITCHING PARAMETERS
Qg (10V)
Total Gate Charge (10V)
Total Gate Charge (4.5V)
Gate Source Charge
Gate Drain Charge
12.7
6.4
2
16
nC
nC
nC
nC
ns
Qg (4.5V)
V
GS=-10V, VDS=-15V, ID=-6.5A
Qgs
Qgd
tD(on)
tr
4
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
7.7
6.8
20
10
22
15
VGS=-10V, VDS=-15V, RL=2.5Ω,
ns
RGEN=3Ω
tD(off)
tf
ns
ns
trr
IF=-6.5A, dI/dt=100A/µs
IF=-6.5A, dI/dt=100A/µs
30
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
nC
Qrr
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in
any a given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6are obtained using< 300µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve
provides a single pulse rating.
Rev0 Sept 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4459
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
40
35
30
25
20
15
10
5
-10V
VDS=-5V
-8V
-5V
8
6
4
2
0
-4.5V
125°C
25°C
-4V
VGS=-3.5V
-40°C
0
0
1
2
3
4
5
0
1
2
3
4
5
-VDS (Volts)
-VGS(Volts)
Figure 1: On-Region Characteristics
Figure 2: Transfer Characteristics
100
80
60
40
20
1.6
1.4
1.2
1.0
0.8
0.6
VGS=-10V
ID=-6.5A
VGS=-4.5V
VGS=-10V
VGS=-4.5V
ID=-5A
6
0
2
4
8
10
-50
0
50
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
100
150
200
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
160
140
120
100
80
1E+01
1E+00
ID=-6.5A
1E-01
1E-02
1E-03
125°C
125°C
25°C
60
1E-04
25°C
-40°C
-40°C
40
1E-05
20
1E-06
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VGS (Volts)
-VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
AO4459
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1200
10
8
1000
800
600
400
200
0
VDS=-15V
ID=-6.5A
Ciss
6
4
Coss
2
Crss
0
0
3
6
9
12
15
0
5
10
15
20
25
30
-Qg (nC)
Figure 7: Gate-Charge Characteristics
-VDS (Volts)
Figure 8: Capacitance Characteristics
100
10
1
40
30
20
10
0
TJ(Max)=150°C
TA=25°C
100µs
RDS(ON)
limited
1ms
10ms
TJ(Max)=150°C
TA=25°C
100ms
DC
1s
10s
0.1
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
Pulse Width (s)
-VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
1
D=Ton/T
J,PK=TA+PDM.ZθJA.RθJA
RθJA=75°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
0.1
P
D
0.01
Ton
Single Pulse
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance(Note E)
Alpha & Omega Semiconductor, Ltd.
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