AO4459 [FREESCALE]
30V P-Channel MOSFET; 30V P沟道MOSFET
| 型号： | AO4459 |
| 厂家： | 
Freescale |
| 描述： | 30V P-Channel MOSFET |
| 文件： | 总6页 (文件大小：418K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO4459
30V P-Channel MOSFET
General Description
technology with a low resistance package to provide
The AO4459 combines advanced trench MOSFET
extremely low R
and battery protection applications.
DS(ON) . This device is ideal for load switch
Features
VDS
-30V
ID (at VGS=-10V)
-6.5A
R
DS(ON) (at VGS=-10V)
< 46mΩ
< 72mΩ
RDS(ON) (at VGS = -4.5V)
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
-30
Units
Drain-Source Voltage
Gate-Source Voltage
V
V
VGS
±20
TA=25°C
TA=70°C
-6.5
Continuous Drain
Current
ID
-5.3
A
Pulsed Drain Current C
IDM
-30
Avalanche Current C
IAS, IAR
EAS, EAR
17
A
Avalanche energy L=0.1mH C
TA=25°C
Power Dissipation B
14
3.1
mJ
PD
W
°C
TA=70°C
2
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
31
Max
40
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t
≤ 10s
RθJA
Steady-State
Steady-State
59
75
RθJL
16
24
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AO4459
30V P-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=-250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
-30
V
VDS=-30V, VGS=0V
-1
µA
-5
IDSS
Zero Gate Voltage Drain Current
TJ=55°C
VDS=0V, VGS= ±20V
VDS=VGS ID=-250µA
VGS=-10V, VDS=-5V
VGS=-10V, ID=-6.5A
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±100
-2.4
nA
V
VGS(th)
ID(ON)
-1.4
-30
-1.9
A
33
50
46
68
72
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
VGS=-4.5V, ID=-5A
VDS=-5V, ID=-6.5A
IS=-1A,VGS=0V
53
mΩ
S
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
14
-0.8
-1
V
Maximum Body-Diode Continuous Current
-3.5
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
520
100
65
pF
pF
pF
Ω
VGS=0V, VDS=-15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
3.5
7.5
11.5
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
9.2
4.6
1.6
2.2
7.5
5.5
19
11
6
nC
nC
nC
nC
ns
Qg(4.5V) Total Gate Charge
VGS=-10V, VDS=-15V, ID=-6.5A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
VGS=-10V, VDS=-15V, RL=2.5Ω,
RGEN=3Ω
ns
tD(off)
tf
ns
7
ns
trr
IF=-6.5A, dI/dt=100A/µs
IF=-6.5A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
11
ns
Qrr
nC
5.3
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
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AO4459
30V P-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
40
35
30
25
20
15
10
5
-10V
-8V
VDS=-5V
-6V
25
20
15
10
5
-5V
VGS=-4.5V
-4V
25°C
125°C
VGS=-3.5V
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
0
1
2
3
4
5
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
80
1.8
1.6
1.4
1.2
1
VGS=-10V
ID=-6.5A
70
60
50
40
30
20
10
VGS=-4.5V
VGS
=-4.5V
ID=-5A
VGS=-10V
0.8
0
2
4
6
8
10
0
25
50
75
100
125
150
175
-ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. JunctionTemperature
(Note E)
120
100
80
1.0E+02
1.0E+01
ID=-6.5A
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
25°C
125°C
125°C
60
40
25°C
20
0.0
0.2
0.4
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
1.2
2
4
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
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AO4459
30V P-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
800
VDS=-15V
ID=-6.5A
700
600
500
400
300
200
100
0
8
Ciss
6
4
Coss
2
Crss
0
0
2
4
6
8
10
0
5
10
15
20
25
30
Qg (nC)
-VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
100.0
10.0
1.0
TA=25°C
TA=100°C
10µs
100µs
TA=150°
RDS(ON)
limited
TA=125°C
1ms
10ms
0.1
TJ(Max)=150°C
TA=25°C
10s
DC
0.0
0.01
0.1
1
10
100
1
10
Time in avalanche, tA (µs)
Figure 9: Single Pulse Avalanche capability (Note C)
100
1000
-VDS (Volts)
Figure 10: Maximum Forward Biased Safe
Operating Area (Note F)
10000
1000
100
10
TA=25°C
1
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)
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4/6
AO4459
30V P-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
0.1
RθJA=75°C/W
PD
0.01
Single Pulse
0.001
Ton
T
0.001
0.00001
0.0001
0.01
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
1000
5/6
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AO4459
30V P-Channel MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
-
-10V
-
VVDC
Qgs
Qgd
+
Vds
VVDC
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
t
td(off)
td(on)
t
r
f
Vgs
-
90%
10%
DUT
Vdd
Vgs
VDC
+
Rg
Vgs
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
EAR= 1/2 LIA2R
L
Vds
Id
Vgs
Vds
-
BVDSS
Vgs
Vdd
VDC
+
Id
Rg
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
-Isd
-IF
Isd
Vgs
dI/dt
-IRM
+
Vdd
VDC
Vdd
-
-Vds
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