AO4456L [AOS]
Transistor;
| 型号： | AO4456L |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | Transistor |
| 文件： | 总7页 (文件大小：189K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO4456
N-Channel Enhancement Mode Field Effect Transistor
TM
SRFET
General Description
Features
SRFETTM AO4456/L uses advanced trench technology
with a monolithically integrated Schottky diode to
provide excellent RDS(ON),and low gate charge. This
device is suitable for use as a low side FET in SMPS,
load switching and general purpose applications.
AO4456 and AO4456L are electrically identical.
-RoHS Compliant
VDS (V) = 30V
ID =20A
(VGS = 10V)
R
DS(ON) < 4.6mΩ (VGS = 10V)
DS(ON) < 5.6mΩ (VGS = 4.5V)
R
UIS TESTED!
Rg,Ciss,Coss,Crss Tested
-AO4456L is Halogen Free
D
S
S
S
G
D
D
D
D
SRFETTM
Soft Recovery MOSFET:
Integrated Schottky Diode
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
Continuous Drain
Current AF
±12
20
V
TA=25°C
TA=70°C
A
IDSM
IDM
16
Pulsed Drain Current B
120
TA=25°C
TA=70°C
3.1
PDSM
W
Power Dissipation
2.0
Avalanche Current B, G
IAR
55
A
Repetitive avalanche energy L=0.1mH B, G
EAR
151
mJ
°C
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
31
Max
40
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
RθJL
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
59
75
Steady-State
Steady-State
16
24
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4456
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=1mA, VGS=0V
VDS=30V, VGS=0V
30
V
0.1
20
IDSS
Zero Gate Voltage Drain Current
mA
µA
TJ=125°C
TJ=125°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±12V
0.1
2.4
VGS(th)
ID(ON)
V
DS=VGS ID=250µA
VGS=10V, VDS=5V
GS=10V, ID=20A
1.4
1.8
V
A
120
V
3.8
5.9
4.6
7.4
5.6
mΩ
mΩ
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V, ID=20A
VDS=5V, ID=20A
IS=1A,VGS=0V
4.5
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
112
0.37
S
V
A
0.5
5
Maximum Body-Diode + Schottky Continuous Current
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
6430 7716
756
pF
pF
pF
Ω
V
GS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
352
493
VGS=0V, VDS=0V, f=1MHz
0.3
0.6
0.9
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
80
36
96
44
115
53
nC
nC
nC
nC
ns
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
V
GS=10V, VDS=15V, ID=20A
17
13
17.5
10
VGS=10V, VDS=15V, RL=0.75Ω,
GEN=3Ω
ns
R
tD(off)
tf
56
ns
10.5
20
ns
trr
IF=20A, dI/dt=300A/µs
IF=20A, dI/dt=300A/µs
IF=20A, dI/dt=500A/µs
IF=20A, dI/dt=500A/µs
25
23
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
26
nC
trr
18
ns
Qrr
38
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
A=25°C. The value in any given application depends on the user's specific board design.
T
B: Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
G: L=100uH, VDD=0V, RG=0Ω, rated VDS=30V and VGS=10V
Rev8: July 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4456
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
150
120
90
60
30
0
30
25
20
15
10
5
6V
VDS=5V
10V
4.5V
125°
VGS=3.5V
25°C
0
0
1
2
3
4
5
1
1.5
2
2.5
3
3.5
4
V
DS (Volts)
VGS(Volts)
Figure 1: On-Region Characteristics
Figure 2: Transfer Characteristics
6
5
4
3
1.8
1.6
1.4
1.2
1
VGS=10V
ID=20A
VGS=4.5V
VGS=4.5V
VGS=10V
2
0
0.8
5
10
15
20
25
30
0
30
60
90
120
150
180
I
D (A)
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
10
8
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
ID=20A
125°C
125°C
25°C
6
4
25°C
2
0.0
0.2
0.4
SD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
2
4
6
8
10
V
V
GS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4456
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
12000
10
8
10000
8000
6000
4000
2000
0
VDS=15V
ID=20A
Ciss
6
4
Crss
2
Coss
0
0
20
40
60
80
100
0
5
10
15
20
25
30
Qg (nC)
V
DS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
1000
100
10
1000.0
100.0
10.0
1.0
In descending order
TA=25°C, 100°C, 125°C, 150°C
10µs
100µ
RDS(ON)
limited
1ms
0.1s
1s
10s
0.1
DC
10
TJ(Max)=150°C
TA=25°C
1
0.0
0.001
0.01
0.1
1
10
100
1000
0.1
1
100
VDS (Volts)
Figure 10: Maximum Forward Biased
Safe Operating Area (Note E)
Time in Avalache, tA (ms)
Figure 9: Single Pulse Avalanche Capability
100
TJ(Max)=150°C
TA=25°C
90
80
70
60
50
40
30
20
10
0
0.0001
0.001
0.01
0.1
Pulse Width (s)
Figure11: Single Pulse Power Rating Junction-to-Ambient (Note E)
1
10
100
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4456
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=40°C/W
1
0.1
PD
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note E)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4456
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.0E-01
0.9
0.8
20A
1.0E-02
10A
0.7
VDS=24V
0.6
1.0E-03
VDS=12V
0.5
5A
0.4
1.0E-04
0.3
0.2
0.1
0
1.0E-05
1.0E-06
IS=1A
0
50
100
150
200
0
50
100
Temperature (°C)
150
200
Temperature (°C)
Figure 12: Diode Reverse Leakage Current vs.
Junction Temperature
Figure 13: Diode Forward voltage vs. Junction
Temperature
70
60
50
40
30
20
10
8
25
3
125ºC
di/dt=800A/us
di/dt=800A/us
125ºC
2.5
2
20
15
10
5
7
6
5
4
25ºC
trr
25ºC
Qrr
Irm
1.5
1
125ºC
25ºC
S
25ºC
0.5
0
125ºC
0
0
0
0
5
10
15
20
25
30
5
10
15
20
25
30
Is (A)
Is (A)
Figure 15: Diode Reverse Recovery Time and Soft
Coefficient vs. Conduction Current
Figure 14: Diode Reverse Recovery Charge and
Peak Current vs. Conduction Current
60
8
35
30
25
20
15
10
5
3
2
1
0
125ºC
25ºC
Is=20A
7
6
5
4
3
2
1
0
Is=20A
50
40
30
20
10
0
125ºC
25ºC
125ºC
25ºC
25ºC
trr
Qrr
S
125ºC
Irm
0
0
200
400
600
800
1000
0
200
400
600
800
1000
di/dt (A)
di/dt (A)
Figure 16: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
Figure 17: Diode Reverse Recovery Time and Soft
Coefficient vs. di/dt
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4456
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Vds
Ig
Charge
Resistive Switching Test Circuit& Waveforms
RL
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
t d(on)
t
r
t d(off)
t
f
t on
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LI
AR
BVDSS
Vds
Id
Vds
+
Vgs
Vdd
IAR
Vgs
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode RecoveryTest Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
Isd
trr
L
IF
Isd
dI/dt
+
IRM
Vdd
Vgs
VDC
Vdd
-
Vds
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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