AO4454L [FREESCALE]
N-Channel 100-V (D-S) MOSFET High performance trench technology; N沟道100 -V （ DS ） MOSFET高性能沟道技术
| 型号： | AO4454L |
| 厂家： | 
Freescale |
| 描述： | N-Channel 100-V (D-S) MOSFET High performance trench technology |
| 文件： | 总5页 (文件大小：193K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Freescale
AO4454L/CMC4454L
N-Channel 100-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
78 @ VGS = 10V
92 @ VGS = 4.5V
ID (A)
5.2
100
4.8
•
•
Low rDS(on) provides higher efficiency and
extends battery life
8
1
2
7
6
5
Low thermal impedance copper leadframe
SOIC-8 saves board space
3
4
•
•
Fast switching speed
High performance trench technology
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parameter
Symbol
VDS
Limit
100
Units
Drain-Source Voltage
Gate-Source Voltage
V
VGS
20
TA=25oC
TA=70oC
5.2
3.9
50
Continuous Drain Currenta
ID
A
Pulsed Drain Currentb
IDM
IS
Continuous Source Current (Diode Conduction)a
Power Dissipationa
2.3
3.1
2.2
A
TA=25oC
TA=70oC
PD
W
oC
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Casea
Symbol
Maximum Units
oC/W
25
t <= 5 sec
t <= 5 sec
RθJC
RθJA
Maximum Junction-to-Ambienta
50
oC/W
Notes
a.
b.
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature
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Freescale
AO4454L/CM 4454L
SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED)
Limits
Parameter
Symbol
Test Conditions
Unit
Min Typ Max
Static
V
Gate-Threshold Voltage
Gate-Body Leakage
VGS(th)
IGSS
VDS = VGS, ID = 250 uA
VDS = 0 V, VGS = 20 V
1
100 nA
VDS = 80 V, VGS = 0 V
VDS = 80 V, VGS = 0 V, TJ = 55oC
1
IDSS
Zero Gate Voltage Drain Current
uA
25
On-State Drain CurrentA
ID(on)
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 5.2 A
VGS = 4.5 V, ID = 4.8 A
20
A
78
mꢀ
92
Drain-Source On-ResistanceA
rDS(on)
Forward TranconductanceA
Diode Forward Voltage
gfs
VDS = 15 V, ID = 5.2 A
IS = 2.3 A, VGS = 0 V
40
S
VSD
0.7
V
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Switching
Qg
Qgs
Qgd
12.5
2.6
VDS = 15 V, VGS = 4.5 V,
ID = 5.2 A
nC
nS
4.6
Turn-On Delay Time
Rise Time
td(on)
tr
td(off)
tf
20
9
VDD = 25 V, RL = 25 ꢀ , ID = 1 A,
VGEN = 10 V
Turn-Off Delay Time
Fall-Time
70
20
Notes
a.
b.
Pulse test: PW <= 300us duty cycle <= 2%.
Guaranteed by design, not subject to production testing.
reserves the right to make changes without fu
FREESCALE
rther notice to any products herein. freescale makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does freescale assumeany liability arising out of the application or
use of any product or circuit, and specificallydisclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in freescale data sheets and/or specifications can anddo vary in different applications and
actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by
customer’s technical experts. freescale does not convey any license under its patent rights nor the rights of others. freescale products are not designed,
intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the freescale product could create a situ ation where personal injury or death may occur.
Should Buyer purchase or use freescale products for any such unintended or unauthorized application, Buyer shall indemnify and hold freescale and its
officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney
fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that freescale was negligent regarding the design or manufacture of the part. freescale is an Equal Opportunity/Affirmative Action Employer.
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Freescale
AO4454L/CM 4454L
Typical Electrical Characteristics
30
25
20
15
10
5
40
10V
VD=5V
35
30
25
20
15
10
5
6V
4.5V
3.5V
0
0
0
1
2
3
4
5
6
0.5
1
1.5
2
0
VDS(V)
VGS GatetoSourceVoltage(V)
Output Characteristics
Transfer Characteristics
1600
1400
1200
1000
800
600
400
200
0
0.2
0.18
0.16
0.14
0.12
0.1
Ciss
6V
4.5V
10V
0.08
0.06
0.04
0.02
0
Coss
Crss
0
5
10
15
20
0
10
20
30
40
V (V)
DS
ID DrainCurrent (A)
On-Resistance vs. Drain Current
Capacitance
10
8
VD= 15V
ID= 10A
2.6
2.2
1.8
1.4
1
VGS = 10V
6
4
0.6
0.2
2
-50
-25
0
25
50
75
100
125
150
TJ - Junction Temperature (oC)
0
0
2
4
6
QG, Total Gate Charge (nC)
8 10 12 14 16 18 20
Gate Charge
On-Resistance vs. Junction Temperature
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Freescale
AO4454L/CM 4454L
Typical Electrical Characteristics
0.2
Id=10A
0.
0.16
0.14
0.12
100
10
125oC
1
0.1
25oC
0.1
0.08
0.06
0.04
0.02
0.01
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
0
VSD - Source-to-Drain Voltage (V)
0
2
4
6
8
10
V GatetoSourceVoltage(V)
GS
Source-Drain Diode Forward Voltage
On-Resistance vs.Gate-to Source Voltage
30
20
10
0
3.2
2.9
2.6
2.3
2
ID = 250
A
µ
1.7
1.4
0.01
0.1
1
10
100
-50
-25
0
25
50
75
100
125
150
175
TJ - Temperature (oC)
Time (sec)
Threshold Voltage
Single Pulse Power
1
D=0.5
Rθ (t) = r(t) * Rθ
JA
JA
0.2
0.1
R
JA = 125 °C/W
θ
0.1
0.05
P(pk
0.02
0.01
t1
t2
0.01
0.001
SINGLEPULSE
TJ - TA = P*
RθJA(t)
Duty Cycle, D = t1
0.0001
0.001
0.01
0.1
1
10
100 1000
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Freescale
AO4454L/CMCC4454L
Package Information
SO-8: 8LEAD
H x 45°
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5
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