AO4455 [AOS]

Plastic Encapsulated Device; 塑料封装的器件
AO4455
型号: AO4455
厂家: ALPHA & OMEGA SEMICONDUCTORS    ALPHA & OMEGA SEMICONDUCTORS
描述:

Plastic Encapsulated Device
塑料封装的器件

文件: 总3页 (文件大小:78K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
AOS Semiconductor  
Product Reliability Report  
AO4455, rev A  
Plastic Encapsulated Device  
ALPHA & OMEGA Semiconductor, Inc  
www.aosmd.com  
This AOS product reliability report summarizes the qualification result for AO4455.  
Accelerated environmental tests are performed on a specific sample size, and then followed  
by electrical test at end point. Review of final electrical test result confirms that AO4455  
passes AOS quality and reliability requirements. The released product will be categorized by  
the process family and be monitored on a quarterly basis for continuously improving the  
product quality.  
Table of Contents:  
I.  
Product Description  
II.  
III.  
IV.  
Package and Die information  
Environmental Stress Test Summary and Result  
Reliability Evaluation  
I. Product Description:  
The AO4455 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low  
gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM  
applications.  
-RoHS Compliant  
-Halogen Free  
Detailed information refers to datasheet.  
II. Die / Package Information:  
AO4455  
Process  
Standard sub-micron  
30V P-Channel MOSFET  
Package Type  
Lead Frame  
Die Attach  
SO8  
Cu  
Ag epoxy  
Bonding  
Cu wire  
Mold Material  
Epoxy resin with silica filler  
MSL (moisture sensitive level) Level 1 based on J-STD-020  
Note * based on information provided by assembler and mold compound supplier  
III. Result of Reliability Stress for AO4455  
Test Item  
Test Condition  
Time  
Point  
Lot  
Total  
Number  
of  
Standard  
Attribution Sample  
size  
Failures  
0
168hr 85°c  
/85%RH +3 cycle  
reflow@260°c  
-
33 lots  
5489pcs  
693pcs  
JESD22-  
A113  
MSL  
Precondition  
168hrs  
500 hrs  
1000 hrs  
0
0
JESD22-  
A108  
Temp = 150 c,  
Vgs=100% of  
Vgsmax  
HTGB  
HTRB  
6 lot  
3 lot  
(Note A*)  
77pcs / lot  
693pcs  
168hrs  
500 hrs  
1000 hrs  
JESD22-  
A108  
Temp = 150 c,  
Vds=80% of  
Vdsmax  
6 lot  
3 lot  
(Note A*)  
77pcs / lot  
1100pcs  
96 hrs  
20 lots  
0
0
0
JESD22-  
A110  
130c, 85%RH,  
33.3 psi, Vgs =  
100% of Vgs max  
HAST  
(Note A*)  
24lots  
55 pcs / lot  
1848pcs  
96 hrs  
JESD22-  
A102  
121c, 29.7psi,  
RH=100%  
Pressure Pot  
(Note A*)  
33 lots  
77 pcs / lot  
2541pcs  
250 / 500  
cycles  
JESD22-  
A104  
-65c to 150c,  
air to air  
Temperature  
Cycle  
(Note A*)  
77 pcs / lot  
Note A: The reliability data presents total of available generic data up to the published date.  
IV. Reliability Evaluation  
FIT rate (per billion): 3.82  
MTTF = 29919 years  
The presentation of FIT rate for the individual product reliability is restricted by the actual  
burn-in sample size of the selected product (AO4455). Failure Rate Determination is based  
on JEDEC Standard JESD 85. FIT means one failure per billion hours.  
Failure Rate = Chi2 x 109 / [2 (N) (H) (Af)]  
= 1.83 x 109 / [2 x (12x77x500 +6x77x1000) x 259] = 3.82  
MTTF = 109 / FIT = 2.62 x 108hrs = 29919 years  
Chi² = Chi Squared Distribution, determined by the number of failures and confidence interval  
N = Total Number of units from HTRB and HTGB tests  
H = Duration of HTRB/HTGB testing  
Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C )  
Acceleration Factor [Af] = Exp [Ea / k (1/Tj u 1/Tj s)]  
Acceleration Factor ratio list:  
55 deg C  
70 deg C  
85 deg C  
32  
100 deg C  
13  
115 deg C  
5.64  
130 deg C  
2.59  
150 deg C  
1
Af  
259  
87  
Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16  
Tj u = The use junction temperature in degree (Kelvin), K = C+273.16  
K = Boltzmann’s constant, 8.617164 X 10-5eV / K  

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