AO4456 [AOS]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | AO4456 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总5页 (文件大小：146K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO4456
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO4456 uses advanced trench technology with a
monolithically integrated Schottky diode to provide
excellent RDS(ON),and low gate charge. This device is
suitable for use as a low side FET in SMPS, load
switching and general purpose applications. Standard
Product AO4456 is Pb-free (meets ROHS & Sony
259 specifications). AO4456 is a Green Product
ordering option. AO4456 and AO4456 are electrically
identical.
VDS (V) = 30V
ID =20A (VGS = 10V)
R
DS(ON) < 4.6mΩ (VGS = 10V)
DS(ON) < 5.6mΩ (VGS = 4.5V)
R
D
S
S
S
G
D
D
D
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
Continuous Drain
Current A
±12
20
V
TA=25°C
TA=70°C
A
IDSM
IDM
16
Pulsed Drain Current B
120
TA=25°C
TA=70°C
3.1
PDSM
W
Power Dissipation
2.0
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Symbol
Typ
31
Max
40
Units
°C/W
°C/W
°C/W
t ≤ 10s
RθJA
Steady-State
Steady-State
59
75
RθJL
16
24
Alpha & Omega Semiconductor, Ltd.
AO4456
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=1mA, VGS=0V
VDS=24V, VGS=0V
30
V
0.008
9
0.1
20
IDSS
Zero Gate Voltage Drain Current
mA
TJ=125°C
TJ=125°C
µA
V
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±12V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
0.1
2.4
VGS(th)
ID(ON)
1.4
1.8
120
A
V
GS=10V, ID=20A
3.8
5.9
4.6
7.4
5.6
mΩ
RDS(ON)
Static Drain-Source On-Resistance
mΩ
S
VGS=4.5V, ID=20A
VDS=5V, ID=20A
IS=1A,VGS=0V
4.5
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
112
0.37
0.5
V
Maximum Body-Diode + Schottky Continuous Current
5
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
6430
756
352
0.9
7716
1.4
pF
pF
pF
Ω
V
GS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
96
44
115
53
Qg(4.5V)
nC
nC
nC
ns
ns
ns
ns
VGS=10V, VDS=15V, ID=20A
Qgs
Qgd
tD(on)
tr
17
13
17.5
10
VGS=10V, VDS=15V, RL=0.75Ω,
R
GEN=3Ω
tD(off)
tf
56
10.5
20
trr
IF=20A, dI/dt=300A/µs
IF=20A, dI/dt=300A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
25
ns
Qrr
26
nC
A: The value of R
is measured with the device in a still air environment with TA =25°C. The power dissipation PDSM and current rating IDSM are
θJA
based on TJ(MAX)=150°C, using t ≤ 10s junction-to-ambient thermal resistance.
B: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
C. The R θJA is the sum of the thermal impedence from junction to lead R qJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
Rev1: June 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4456
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
150
120
90
60
30
0
30
25
20
15
10
5
6V
VDS=5V
10V
4.5V
125°
VGS=3.5V
25°C
0
0
1
2
3
4
5
1
1.5
2
2.5
3
3.5
4
V
DS (Volts)
V
GS(Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
6
5
4
3
1.8
1.6
1.4
1.2
1
VGS=10V
ID=20A
VGS=4.5V
VGS=4.5V
VGS=10V
2
0
0.8
5
10
15
20
25
30
0
30
60
90
120
150
180
ID (A)
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
10
8
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
ID=20A
125°C
125°C
25°C
6
4
25°C
2
0.0
0.2
0.4
SD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
2
4
6
8
10
V
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AO4456
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
12000
10
8
10000
8000
6000
4000
2000
0
VDS=15V
ID=20A
Ciss
6
4
Crss
2
Coss
0
0
20
40
60
80
100
0
5
10
15
20
25
30
Qg (nC)
Figure 7: Gate-Charge Characteristics
VDS (Volts)
Figure 8: Capacitance Characteristics
1000.0
100.0
10.0
1.0
100
90
80
70
60
50
40
30
20
10
0
10µs
TJ(Max)=150°C
TA=25°C
100µ
1ms
RDS(ON)
limited
0.1s
10ms
DC
TJ(Max)=150°C
TA=25°C
0.1
0.0
0.1
1
10
100
0.0001 0.001
0.01
0.1
1
10
100
V
DS (Volts)
Pulse Width (s)
Figure10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD
D=Ton/T
0.01
T
J,PK=TA+PDM.ZθJA.RθJA
Ton
T
Single Pulse
RθJA=40°C/W
0.001
0.00001
0.0001
0.001
0.01
0.1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
1
10
100
1000
Alpha & Omega Semiconductor, Ltd.
AO4456
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.0E-01
0.9
0.8
20A
1.0E-02
10A
0.7
VDS=24V
0.6
1.0E-03
VDS=12V
0.5
5A
0.4
1.0E-04
0.3
0.2
0.1
0
1.0E-05
1.0E-06
IS=1A
0
50
100
150
200
0
50
100
Temperature (°C)
150
200
Temperature (°C)
Figure 12: Diode Reverse Leakage Current vs.
Junction Temperature
Figure 13: Diode Forward voltage vs. Junction
Temperature
70
60
50
40
30
20
10
8
25
3
di/dt=800A/us
125ºC
di/dt=800A/us
125ºC
2.5
2
20
15
10
5
7
6
5
4
25ºC
trr
25ºC
Qrr
Irm
1.5
1
125ºC
125ºC
S
25ºC
25
0.5
0
25ºC
0
0
0
0
5
10
15
20
25
30
5
10
15
20
30
Is (A)
Is (A)
Figure 15: Diode Reverse Recovery Time and
Soft Coefficient vs. Conduction Current
Figure 14: Diode Reverse Recovery Charge and
Peak Current vs. Conduction Current
60
8
7
6
5
4
3
2
1
0
35
30
25
20
15
10
5
3
2
1
0
125ºC
25ºC
Is=20A
Is=20A
50
40
30
20
10
0
125ºC
25ºC
125ºC
25ºC
25ºC
trr
Qrr
S
125ºC
Irm
0
0
200
400
600
800
1000
0
200
400
600
800
1000
di/dt (A)
di/dt (A)
Figure 16: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
Figure 17: Diode Reverse Recovery Time and Soft
Coefficient vs. di/dt
Alpha & Omega Semiconductor, Ltd.
相关型号：
©2020 ICPDF网 联系我们和版权申明