AO4452 [AOS]
100V N-Channel MOSFET; 100V N沟道MOSFET
| 型号： | AO4452 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 100V N-Channel MOSFET |
| 文件： | 总6页 (文件大小：439K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO4452
100V N-Channel MOSFET
SDMOS TM
General Description
Product Summary
The AO4452 is fabricated with SDMOSTM trench
technology that combines excellent RDS(ON) with low gate
charge.The result is outstanding efficiency with controlled
switching behavior. This universal technology is well
suited for PWM, load switching and general purpose
applications.
VDS
100V
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
8A
< 25mΩ
< 31mΩ
RDS(ON) (at VGS = 7V)
100% UIS Tested
100% Rg Tested
SOIC-8
D
Top View
Bottom View
D
D
D
D
G
G
S
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
Units
Drain-Source Voltage
Gate-Source Voltage
100
±25
8
V
V
VGS
TA=25°C
TA=70°C
Continuous Drain
Current
ID
6.5
A
Pulsed Drain Current C
Avalanche Current C
IDM
IAR
57
28
A
Repetitive avalanche energy L=0.1mH C
TA=25°C
EAR
39
mJ
3.1
2
PD
W
Power Dissipation B
TA=70°C
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
°C
Thermal Characteristics
Parameter
Symbol
Typ
31
Max
40
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t
≤ 10s
RθJA
Steady-State
Steady-State
59
75
RθJL
16
24
Rev 3: May 2012
www.aosmd.com
Page 1 of 6
AO4452
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
100
V
VDS=100V, VGS=0V
10
µA
50
IDSS
Zero Gate Voltage Drain Current
TJ=55°C
VDS=0V, VGS= ±25V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=8A
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
100
4
nA
V
VGS(th)
ID(ON)
2
3.2
60
A
20.5
36
25
43
31
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
VGS=7V, ID=6.5A
VDS=5V, ID=8A
IS=1A,VGS=0V
25
mΩ
S
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
23
0.66
1
5
V
Maximum Body-Diode Continuous Current
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1400 1770 2200
pF
pF
pF
Ω
VGS=0V, VDS=50V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
115
33
165
55
215
80
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=50V, ID=8A
VGS=10V, VDS=50V, RL=6Ω,
0.3
0.65
1.0
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
14
4
28
9
42
14
14
nC
nC
nC
ns
ns
ns
ns
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
6
10
12
4
RGEN=3Ω
tD(off)
tf
17
5
trr
IF=8A, dI/dt=500A/µs
IF=8A, dI/dt=500A/µs
IF=8A, dI/dt=100A/µs
IF=8A, dI/dt=100A/µs
11
42
21
20
16
60
27
28
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
21
78
33
36
ns
Qrr
trr
nC
ns
Qrr
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 3: May 2012
www.aosmd.com
Page 2 of 6
AO4452
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
50
40
30
20
10
0
60
50
40
30
20
10
0
8V
10V
VDS=5V
7V
125°C
6.5V
25°C
VGS=6V
3
4
5
6
7
0
1
2
3
4
5
VGS(Volts)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
Figure 2: Transfer Characteristics (Note E)
2.2
2
40
35
30
25
20
15
10
VGS=10V
ID=8A
VGS=7V
1.8
1.6
1.4
1.2
1
VGS=10V
VGS=7V
ID=6.5A
0.8
0
25
50
75
100
125
175
150
0
6
12
18
ID (A)
24
30
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
45
40
35
30
25
20
15
1.0E+02
1.0E+01
ID=8A
1.0E+00
125°C
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
25°C
25°C
6
7
8
9
10
0.0
0.2
0.4
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
1.2
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 3: May 2012
www.aosmd.com
Page 3 of 6
AO4452
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
2500
VDS=50V
ID=8A
Ciss
2000
1500
1000
500
0
6
4
Crss
2
Coss
0
0
5
10
15
Qg (nC)
20
25
30
0
20
40
VDS (Volts)
Figure 8: Capacitance Characteristics
60
80
100
Figure 7: Gate-Charge Characteristics
100
100.0
10.0
1.0
10µs
TA=25°C
RDS(ON)
limited
100µs
TA=100°C
1ms
TA=150°C
TJ(Max)=150°C
TA=25°C
10ms
10s
0.1
TA=125°C
DC
10
0.0
10
0.000001
0.01
0.1
1
100
0.00001
0.0001
0.001
VDS (Volts)
Time in avalanche, tA (s)
Figure 9: Single Pulse Avalanche capability (Note
C)
Figure 10: Maximum Forward Biased
Safe Operating Area (Note F)
10000
1000
100
10
TA=25°C
1
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)
Rev 3: May 2012
www.aosmd.com
Page 4 of 6
AO4452
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
In descending order
D=Ton/T
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
1
0.1
RθJA=75°C/W
PD
0.01
Single Pulse
0.001
Ton
T
0.001
0.00001
0.0001
0.01
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
1000
300
250
200
150
100
50
15
12
9
24
20
16
12
8
2
di/dt=800A/µs
di/dt=800A/µs
125ºC
125ºC
1.6
1.2
0.8
0.4
Irm
trr
25ºC
25ºC
125ºC
6
125ºC
3
4
S
Qrr
25ºC
25
25ºC
20
0
0
0
0
5
10
15
IS (A)
20
30
0
5
10
15
25
30
IS (A)
Figure 13: Diode Reverse Recovery Charge and Peak
Current vs. Conduction Current
Figure 14: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
150
120
90
60
30
0
30
30
25
20
15
10
5
3
2
1
0
trr
26
22
18
14
10
6
Is=20A
Is=20A
125ºC
125ºC
25ºC
25ºC
125ºC
Qrr
125ºC
25ºC
25ºC
Irm
S
2
-2
0
0
200
400
600
800
1000
0
200
400
600
800
1000
di/dt (A/µs)
di/dt (A/µs)
Figure 15: Diode Reverse Recovery Charge and Peak
Current vs. di/dt
Figure 16: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
Rev 3: May 2012
www.aosmd.com
Page 5 of 6
AO4452
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
Rev 3: May 2012
www.aosmd.com
Page 6 of 6
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