AO4429L [AOS]
P-Channel Enhancement Mode Field Effect Transistor; P沟道增强型场效应晶体管型号: | AO4429L |
厂家: | ALPHA & OMEGA SEMICONDUCTORS |
描述: | P-Channel Enhancement Mode Field Effect Transistor |
文件: | 总4页 (文件大小:194K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
AO4429
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO4429 uses advanced trench technology to
provide excellent RDS(ON), and ultra-low low gate
charge. This device is suitable for use as a load
switch. The device is ESD protected. Standard
Product AO4429 is Pb-free (meets ROHS & Sony
259 specifications). AO4429L is a Green Product
ordering option. AO4429 and AO4429L are
electrically identical.
VDS (V) = -30V
ID = -15 A (VGS = -10V)
Max RDS(ON) < 7.7mΩ (VGS = -10V)
Max RDS(ON) < 12mΩ (VGS = -4.5V)
ESD Rating: 4KV HBM
D
SOIC-8
Top View
S
S
S
G
D
D
D
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
-30
V
VGS
Gate-Source Voltage
Continuous Drain
Current A
±20
-15
V
A
TA=25°C
TA=70°C
ID
-12.8
-80
Pulsed Drain Current B
IDM
TA=25°C
TA=70°C
3.1
PD
W
Power Dissipation A
2
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Symbol
Typ
26
Max
40
Units
°C/W
°C/W
°C/W
t ≤ 10s
RθJA
Steady-State
Steady-State
50
75
RθJL
14
24
Alpha & Omega Semiconductor, Ltd.
AO4429
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=-250µA, VGS=0V
-30
V
V
DS=-24V, VGS=0V
-1
-10
±1
IDSS
Zero Gate Voltage Drain Current
µA
µA
V
A
TJ=55°C
IGSS
VGS(th)
ID(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS=±20V
V
DS=VGS ID=-250µA
-1.4
-80
-1.8
-2.7
VGS=-10V, VDS=-5V
V
GS=-10V, ID=-15A
6.4
8.1
9
7.7
12
mΩ
mΩ
RDS(ON)
TJ=125°C
Static Drain-Source On-Resistance
VGS=-4.5V, ID=-10A
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
VDS=-5V, ID=-15A
IS=-1A,VGS=0V
50
-0.71
S
V
A
-1
-5
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
5355
970
620
2.8
6400
4
pF
pF
pF
Ω
VGS=0V, VDS=-15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
Gate Charge
91
46
16
21
15
15
82.5
34
120
60
nC
nC
nC
nC
ns
ns
ns
ns
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
VGS=-10V, VDS=-15V, ID=-15A
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
VGS=-10V, VDS=-15V, RL=1Ω,
RGEN=3Ω
tD(off)
tf
trr
Qrr
IF=-15A, dI/dt=100A/µs
IF=-15A, dI/dt=100A/µs
38
38
50
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev2: August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4429
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
50
40
30
20
10
0
60
50
40
30
20
10
0
-10V
-4.5V
-4V
VDS=-5V
-3.5V
VGS=-3V
125°C
25°C
3.5
1
1.5
2
2.5
3
4
0
1
2
3
4
5
-VGS(Volts)
Figure 2: Transfer Characteristics
-VDS (Volts)
Fig 1: On-Region Characteristics
10
1.6
1.4
1.2
1
ID=-15A
VGS=-4.5V
8
6
4
2
VGS=-10V
VGS=-10V
VGS=-4.5V
0.8
0
5
10
15
20
25
0
25
50
75
100
125
150
175
-ID (A)
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
20
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
ID=-15A
125°C
16
12
8
VGS=0V
125°C
25°C
25°C
4
0
0.0
0.2
0.4
-VSD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
2
4
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AO4429
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
8000
7000
6000
5000
4000
3000
2000
1000
0
10
VDS=-15V
ID=-15A
Ciss
8
6
4
Crss
Coss
2
0
0
20
40
60
80
100
0
5
10
15
20
25
30
-Qg (nC)
-VDS (Volts)
Figure 8: Capacitance Characteristics
Figure 7: Gate-Charge Characteristics
100.0
10.0
1.0
100
80
60
40
20
0
RDS(ON)
10µs
TJ(Max)=150°C
TA=25°C
100µs
1ms
10ms
0.1s
limited
1s
10s
TJ(Max)=150°C
TA=25°C
DC
0.1
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
Pulse Width (s)
-VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=40°C/W
P
0.1
0.01
Ton
T
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
相关型号:
©2020 ICPDF网 联系我们和版权申明