AO4433 [AOS]
P-Channel Enhancement Mode Field Effect Transistor; P沟道增强型场效应晶体管
| 型号： | AO4433 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | P-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总4页 (文件大小：158K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO4433
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO4433 uses advanced trench technology to
provide excellent RDS(ON), and ultra-low low gate
charge with a 25V gate rating. This device is suitable
for use as a load switch or in PWM applications. The
device is ESD protected. Standard product AO4433
is Pb-free (meets ROHS & Sony 259 specifications).
AO4433L is a Green Product ordering option.
VDS (V) = -30V
ID = -11 A
(VGS = -20V)
R
DS(ON) < 14mΩ (VGS = -20V)
DS(ON) < 18mΩ (VGS = -10V)
R
ESD Rating: 1.5KV HBM
AO4433 and AO4433L are electrically identical.
SOIC-8
Top View
D
S
S
S
G
D
D
D
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
-30
V
VGS
Gate-Source Voltage
Continuous Drain
Current A
±25
-11
V
A
TA=25°C
TA=70°C
ID
-9.7
Pulsed Drain Current B
IDM
-50
TA=25°C
TA=70°C
3
PD
W
Power Dissipation A
2.1
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Symbol
Typ
28
Max
40
Units
°C/W
°C/W
°C/W
t ≤ 10s
RθJA
Steady-State
Steady-State
54
75
RθJL
21
30
Alpha & Omega Semiconductor, Ltd.
AO4433
Electrical Characteristics (T =25°C unless otherwise noted)
J
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=-250µA, VGS=0V
-30
V
V
DS=-24V, VGS=0V
-1
IDSS
Zero Gate Voltage Drain Current
µA
-5
TJ=55°C
µA
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS=±25V
VDS=VGS ID=-250µA
VGS=-10V, VDS=-5V
VGS=-20V, ID=-11A
±1
VGS(th)
ID(ON)
-2
-2.8
-4
V
A
-50
11
15
14
19
18
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
mΩ
mΩ
S
VGS=-10V, ID=-10A
13.8
38.5
20
V
V
GS=-4.5V, ID=-4A
DS=-5V, ID=-11A
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
IS=-1A,VGS=0V
-0.72
-1
V
Maximum Body-Diode Continuous Current
-4.2
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1760 2200
360
pF
pF
pF
Ω
V
V
GS=0V, VDS=-15V, f=1MHz
GS=0V, VDS=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
255
6.4
8
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
30
7
38
nC
nC
nC
ns
ns
ns
ns
VGS=-10V, VDS=-15V, ID=-11A
Gate Source Charge
Gate Drain Charge
8
Turn-On DelayTime
11.5
8
VGS=-10V, VDS=-15V, RL=1.5Ω,
RGEN=3Ω
Turn-On Rise Time
tD(off)
tf
Turn-Off DelayTime
35
18.5
24
16
Turn-Off Fall Time
trr
IF=-11A, dI/dt=100A/µs
IF=-11A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
30
ns
nC
Qrr
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating.
Rev2: August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4433
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
20
15
10
5
30
-10V
VDS=-5V
-5V
-6V
125°C
20
10
0
-4.5V
25°C
4.5
VGS=-4V
0
0
1
2
3
4
5
2
2.5
3
3.5
-VGS(Volts)
4
5
-VDS (Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
15
14
13
12
11
10
1.6
1.4
1.2
1
VGS=-20V
ID=-11A
VGS=-10V
VGS=-20V
VGS=-10V
ID=-10A
0.8
0
5
10
15
20
25
0
25
50
75
100
125
150
175
-ID (A)
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
50
ID=-11A
40
30
20
10
0
125°C
125°C
25°C
25°C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
5
10
15
20
-VSD (Volts)
-VGS (Volts)
Figure 6: Body-Diode Characteristics
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AO4433
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2500
10
8
VDS=-15V
ID=-11A
Ciss
2000
1500
1000
500
0
6
4
Coss
Crss
2
0
0
5
10
15
-Qg (nC)
Figure 7: Gate-Charge Characteristics
20
25
30
35
0
5
10
15
20
25
30
-VDS (Volts)
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
40
30
20
10
0
TJ(Max)=150°C
TA=25°C
10µs
100µs
1ms
10ms
0.1s
RDS(ON)
limited
1s
10s
TJ(Max)=150°C
TA=25°C
DC
0.1
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
Pulse Width (s)
-VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=40°C/W
PD
0.1
Ton
T
Single Pulse
0.001
0.01
0.00001
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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