AO4437 [FREESCALE]
12V P-Channel MOSFET; 12V P沟道MOSFET
| 型号： | AO4437 |
| 厂家： | 
Freescale |
| 描述： | 12V P-Channel MOSFET |
| 文件： | 总4页 (文件大小：382K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO4437
12V P-Channel MOSFET
General Description
excellent RDS(ON), low gate charge and operation with gate
load switch or in PWM applications. It is ESD protected.
The AO4437 uses advanced trench technology to provide
voltages as low as 1.8V. This device is suitable for use as a
Features
VDS (V) = -12V
ID = -11 A (VGS = -4.5V)
RDS(ON) < 16mΩ (VGS = -4.5V)
RDS(ON) < 20mΩ (VGS = -2.5V)
RDS(ON) < 25mΩ (VGS = -1.8V)
ESD Rating: 4KV HBM
100% UIS Tested
100% Rg Tested
SOIC-8
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
VDS
-12
V
Gate-Source Voltage
VGS
±8
V
A
TA=25°C
TA=70°C
-11
Continuous Drain
Current A
Pulsed Drain Current B
ID
-9
-20
IDM
TA=25°C
TA=70°C
3
PD
W
°C
Power Dissipation A
2.1
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
31
Max
40
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Steady-State
Steady-State
63
75
RθJL
21
30
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AO4437
12V P-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
ID=-250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
-12
V
V
DS=-9.6V, VGS=0V
-1
-5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
VDS=0V, VGS=±4.5V
VDS=0V, VGS=±8V
VDS=VGS ID=-250µA
±1
±10
-1
µA
µA
IGSS
Gate-Body leakage current
VGS(th)
ID(ON)
Gate Threshold Voltage
On state drain current
-0.3
-20
-0.55
V
GS=-4.5V, VDS=-5V
A
VGS=-4.5V, ID=-11A
12.4
17
16
21
20
25
mΩ
TJ=125°C
RDS(ON)
Static Drain-Source On-Resistance
VGS=-2.5V, ID=-10A
VGS=-1.8V, ID=-6A
VDS=-5V, ID=-11A
IS=-1A,VGS=0V
15.9
20.4
38
mΩ
mΩ
S
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
-0.74
-1
V
Maximum Body-Diode Continuous Current
-4.5
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
3960
910
757
6.9
4750
pF
pF
pF
Ω
VGS=0V, VDS=-6V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
8.5
47
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
37
4.5
11
nC
nC
nC
ns
ns
ns
ns
VGS=-4.5V, VDS=-6V, ID=-11A
15
V
GS=-4.5V, VDS=-6V, RL=0.55Ω,
43
RGEN=3Ω
tD(off)
tf
158
95
trr
IF=-11A, dI/dt=100A/µs
IF=-11A, dI/dt=100A/µs
64
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
50
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C.
The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
SOA curve provides a single pulse rating.
Rev3: Nov. 2010
2/4
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AO4437
12V P-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
20
15
10
5
-2.0V
VDS=-5V
-8.0V
6
-1.5V
125°C
4
VGS=-1.0V
25°C
1.2
2
0
0
0
0.2
0.4
0.6
0.8
1
0.2
0.4
0.6
0.8
-VGS(Volts)
1
1.4
-VDS (Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
30
25
20
15
10
1.4
1.2
1.0
0.8
ID=-6A, VGS=-1.8V
ID=-10A, VGS=-2.5V
VGS=-1.8V
VGS=-2.5V
ID=-11A, VGS=-4.5V
VGS=-4.5V
0
2
4
6
8
10
0
25
50
75
100
125
150
175
-ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Figure 4: On-Resistance vs. Junction
Temperature
40
1E+01
1E+00
1E-01
1E-02
1E-03
1E-04
1E-05
35
30
25
20
15
10
5
125°C
ID=-11A
25°C
125°C
25°C
0
0.0
0.2
0.4
-VSD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
0
2
4
6
8
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
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3/4
AO4437
12V P-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
6400
5600
4800
4000
3200
2400
1600
800
5.00E+00
4.00E+00
3.00E+00
2.00E+00
1.00E+00
0.00E+00
VDS=-6V
ID=-11A
Ciss
Coss
Crss
0
0
5
10 15 20 25 30 35 40 45
-Qg (nC)
0
5
10
15
20
-VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
40
30
20
10
0
TJ(Max)=150°C
RDS(ON)
limited
TJ(Max)=150°C
TA=25°C
TA=25°C
10µs
100µs
10.0
1.0
1ms
10ms
0.1s
1s
10s
DC
0.1
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
Pulse Width (s)
-VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=90°C/W
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
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