AO4433L [AOS]
Transistor;
| 型号： | AO4433L |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | Transistor |
| 文件： | 总5页 (文件大小：461K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO4433
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO4433/L uses advanced trench technology to
provide excellent RDS(ON) and ultra-low low gate charge
with a 25V gate rating. This device is suitable for use
as a load switch or in PWM applications.AO4433 and
AO4433L are electrically identical.
VDS (V) = -30V
ID = -11 A
(VGS = -20V)
RDS(ON) < 14mΩ (VGS = -20V)
DS(ON) < 18mΩ (VGS = -10V)
R
RDS(ON) < 36mΩ (VGS= -5V)
-RoHS Compliant
-AO4433 is Halogen Free
ESD PROTECTED!
UIS TESTED!
Ciss,Coss,Crss Tested!
SOIC-8
D
Top View
S
S
S
G
D
D
D
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
VDS
-30
V
Gate-Source Voltage
Continuous Drain
Current AF
VGS
±25
-11
V
A
TA=25°C
TA=70°C
ID
-9.7
-50
Pulsed Drain Current B
IDM
TA=25°C
TA=70°C
3
PD
W
Power Dissipation A
Avalanche Current B
2.1
A
IAR
-36
Repetitive avalanche energy 0.1mHB
EAR
65
mJ
°C
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
28
Max
40
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient AF
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Steady-State
Steady-State
54
75
RθJL
21
30
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4433
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=-250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
-30
V
V
DS=-30V, VGS=0V
-1
IDSS
Zero Gate Voltage Drain Current
µA
-5
TJ=55°C
VDS=0V, VGS=±25V
DS=VGS ID=-250µA
VGS=-10V, VDS=-5V
GS=-20V, ID=-11A
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±10
-3.5
µA
V
V
VGS(th)
ID(ON)
-1.5
-50
-2.45
A
V
11
15
14
19
18
36
mΩ
TJ=125°C
RDS(ON)
Static Drain-Source On-Resistance
VGS=-10V, ID=-10A
VGS=-5V, ID=-5A
VDS=-5V, ID=-11A
IS=-1A,VGS=0V
13.8
25.8
20
mΩ
mΩ
S
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
-0.72
-1
V
Maximum Body-Diode Continuous Current
-4.2
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1760 2200
360
pF
pF
pF
Ω
V
V
GS=0V, VDS=-15V, f=1MHz
GS=0V, VDS=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
255
6.4
357
8
3.2
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
30
7
38
nC
nC
nC
ns
ns
ns
ns
VGS=-10V, VDS=-15V, ID=-11A
8
11.5
8
VGS=-10V, VDS=-15V, RL=1.5Ω,
RGEN=3Ω
tD(off)
tf
35
18.5
24
16
trr
IF=-11A, dI/dt=100A/µs
IF=-11A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
30
ns
Qrr
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
T A=25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
SOA curve provides a single pulse rating.
F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
Rev7: Dec 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4433
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
20
15
10
5
30
-10V
VDS=-5V
-5V
-6V
125°C
20
10
0
-4.5V
25°C
4.5
VGS=-4V
0
0
1
2
3
4
5
2
2.5
3
3.5
-VGS(Volts)
4
5
-VDS (Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
40
30
20
10
0
1.6
1.4
1.2
1
VGS=-5V
VGS=-10V
ID=-10A
VGS=-20V
ID=-11A
VGS=-10V
VGS=-5V
ID=-5A
VGS=-20V
0.8
0
5
10
15
20
25
0
25
50
75
100
125
150
175
-ID (A)
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
50
ID=-11A
40
30
20
10
0
125°C
125°C
25°C
25°C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
5
10
15
20
-VSD (Volts)
-VGS (Volts)
Figure 6: Body-Diode Characteristics
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4433
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2500
10
8
VDS=-15V
ID=-11A
Ciss
2000
1500
1000
500
0
6
4
Coss
Crss
2
0
0
5
10
15
-Qg (nC)
Figure 7: Gate-Charge Characteristics
20
25
30
35
0
5
10
15
20
25
30
-VDS (Volts)
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
40
30
20
10
0
TJ(Max)=150°C
TA=25°C
10µs
RDS(ON)
100µs
1ms
10ms
0.1s
limited
1s
TJ(Max)=150°C
TA=25°C
10s
DC
0.1
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
Pulse Width (s)
-VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=75°C/W
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4433
Gate Charge Test Circuit & Waveform
Vgs
Qg
-
-10V
-
VDC
Qgs
Qgd
+
Vds
VDC
+
DUT
Vgs
Ig
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
t
td(off)
td(on)
t
r
f
Vgs
-
DUT
Vdd
Vgs
VDC
+
Rg
Vgs
1
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
EAR= 1/2 LIA2R
L
Vds
Id
Vgs
Vds
-
B
I
Vgs
Vdd
VDC
+
Id
Rg
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
Vds -
DUT
Vgs
trr
L
-Isd
-IF
Isd
Vgs
dI/dt
-IRM
+
Vdd
VDC
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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