AO4437 [AOS]
P-Channel Enhancement Mode Field Effect Transistor; P沟道增强型场效应晶体管
| 型号： | AO4437 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | P-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总3页 (文件大小：98K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO4437
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO4437 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 1.8V. This device is suitable for use as a
load switch or in PWM applications. It is ESD protected.
Standard Product AO4437 is Pb-free (meets ROHS & Sony
259 specifications). AO4437L is a Green Product ordering
option. AO4437 and AO4437L are electrically identical.
VDS (V) = -12V
ID = -11 A (VGS = -4.5V)
RDS(ON) < 16mΩ (VGS = -4.5V)
RDS(ON) < 20mΩ (VGS = -2.5V)
RDS(ON) < 25mΩ (VGS = -1.8V)
ESD Rating: 4KV HBM
SOIC-8
Top View
D
S
S
S
G
D
D
D
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
-12
V
VGS
Gate-Source Voltage
Continuous Drain
Current A
±8
V
A
TA=25°C
TA=70°C
-11
ID
-9
-20
Pulsed Drain Current B
IDM
TA=25°C
TA=70°C
3
PD
W
Power Dissipation A
2.1
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150
°C
Thermal Characteristics
Parameter
Symbol
Typ
31
Max
40
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
63
75
Steady-State
Steady-State
RθJL
21
30
Alpha & Omega Semiconductor, Ltd.
AO4437
Electrical Characteristics (T =25°C unless otherwise noted)
J
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=-250µA, VGS=0V
-12
V
VDS=-9.6V, VGS=0V
-1
IDSS
Zero Gate Voltage Drain Current
µA
-5
TJ=55°C
µA
µA
VDS=0V, VGS=±4.5V
VDS=0V, VGS=±8V
VDS=VGS ID=-250µA
±1
±10
-1
IGSS
Gate-Body leakage current
VGS(th)
ID(ON)
Gate Threshold Voltage
On state drain current
-0.3
-20
-0.55
V
GS=-4.5V, VDS=-5V
A
VGS=-4.5V, ID=-11A
12.4
17
16
21
20
25
mΩ
TJ=125°C
RDS(ON)
Static Drain-Source On-Resistance
mΩ
mΩ
S
VGS=-2.5V, ID=-10A
VGS=-1.8V, ID=-6A
VDS=-5V, ID=-11A
IS=-1A,VGS=0V
15.9
20.4
38
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
-0.74
-1
V
Maximum Body-Diode Continuous Current
-4.5
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
3960 4750
910
pF
pF
pF
Ω
V
V
GS=0V, VDS=-6V, f=1MHz
GS=0V, VDS=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
757
6.9
8.5
47
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
37
4.5
11
nC
nC
nC
ns
ns
ns
ns
VGS=-4.5V, VDS=-6V, ID=-11A
Gate Source Charge
Gate Drain Charge
Turn-On Delay Time
15
VGS=-4.5V, VDS=-6V, RL=0.55Ω,
RGEN=3Ω
Turn-On Rise Time
43
tD(off)
tf
Turn-Off Delay Time
158
95
Turn-Off Fall Time
trr
IF=-11A, dI/dt=100A/µs
IF=-11A, dI/dt=100A/µs
64
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
nC
Qrr
50
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating.
Rev2: August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AO4437
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
20
15
10
5
-2.0V
VDS=-5V
-8.0V
6
-1.5V
125°C
4
VGS=-1.0V
25°C
1.2
2
0
0
0
0.2
0.4
0.6
0.8
1
0.2
0.4
0.6
0.8
-VGS(Volts)
1
1.4
-VDS (Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
30
25
20
15
10
1.4
1.2
1.0
0.8
ID=-6A, VGS=-1.8V
ID=-10A, VGS=-2.5V
VGS=-1.8V
VGS=-2.5V
ID=-11A, VGS=-4.5V
VGS=-4.5V
0
2
4
6
8
10
0
25
50
75
100
125
150
175
-ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Figure 4: On-Resistance vs. Junction
Temperature
40
1E+01
1E+00
1E-01
1E-02
1E-03
1E-04
1E-05
35
30
25
20
15
10
5
125°C
ID=-11A
25°C
125°C
25°C
0
0.0
0.2
0.4
-VSD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
0
2
4
6
8
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
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