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AO4435_11 [AOS]

30V P-Channel MOSFET; 30V P沟道MOSFET
AO4435_11
型号： AO4435_11
厂家： ALPHA & OMEGA SEMICONDUCTORS    ALPHA & OMEGA SEMICONDUCTORS
描述：

30V P-Channel MOSFET
30V P沟道MOSFET
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中文：  中文翻译
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AO4435  
30V P-Channel MOSFET  
General Description  
Product Summary  
The AO4435 uses advanced trench technology to  
provide excellent RDS(ON), and ultra-low low gate charge  
with a 25V gate rating. This device is suitable for use as  
a load switch or in PWM applications.  
VDS = -30V  
ID = -10.5A  
RDS(ON) < 14mꢀ (VGS = -20V)  
RDS(ON) < 18mꢀ (VGS = -10V)  
RDS(ON) < 36mꢀ (VGS = -5V)  
(VGS = -20V)  
-RoHS Compliant  
-AO4435 is Halogen Free  
100% UIS Tested  
100% Rg Tested  
SOIC-8  
D
Top View  
Bottom View  
D
D
D
D
G
G
S
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
VDS  
Maximum  
Units  
Drain-Source Voltage  
-30  
V
Gate-Source Voltage  
Continuous Drain  
Current A  
VGS  
±25  
-10.5  
-8  
V
A
TA=25°C  
TA=70°C  
ID  
Pulsed Drain Current B  
IDM  
-80  
TA=25°C  
TA=70°C  
3.1  
Power Dissipation A  
Avalanche Current B  
PD  
W
2.0  
IAR  
-20  
A
mJ  
°C  
Repetitive avalanche energy 0.3mH B  
EAR  
60  
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 150  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
32  
Max  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
t ≤ 10s  
40  
75  
24  
RθJA  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Lead C  
Steady State  
Steady State  
60  
RθJL  
17  
Alpha & Omega Semiconductor, Ltd.  
www.aosmd.com  
AO4435  
Electrical Characteristics (TJ=25°C unless otherwise noted)  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max Units  
STATIC PARAMETERS  
ID = -250µA, VGS = 0V  
BVDSS  
Drain-Source Breakdown Voltage  
-30  
V
VDS = -30V, VGS = 0V  
-1  
µA  
-5  
IDSS  
Zero Gate Voltage Drain Current  
TJ = 55°C  
TJ=125°C  
VDS = 0V, VGS = ±25V  
VDS = VGS ID = -250µA  
VGS = -10V, VDS = -5V  
VGS = -20V, ID = -11A  
IGSS  
Gate-Body leakage current  
Gate Threshold Voltage  
On state drain current  
±100  
-3  
nA  
V
VGS(th)  
ID(ON)  
-1.7  
-80  
-2.3  
A
11  
15  
14  
19  
18  
36  
RDS(ON)  
Static Drain-Source On-Resistance  
mΩ  
V
GS = -10V, ID = -10A  
VGS = -5V, ID = -5A  
DS = -5V, ID = -10A  
IS = -1A,VGS = 0V  
15  
27  
V
gFS  
VSD  
IS  
Forward Transconductance  
Diode Forward Voltage  
22  
S
V
A
-0.74  
-1  
Maximum Body-Diode Continuous Current  
-3.5  
DYNAMIC PARAMETERS  
Ciss  
Coss  
Crss  
Rg  
Input Capacitance  
1130 1400  
pF  
pF  
pF  
Ω
VGS=0V, VDS=-15V, f=1MHz  
Output Capacitance  
Reverse Transfer Capacitance  
Gate resistance  
240  
155  
VGS=0V, VDS=0V, f=1MHz  
1
5.8  
8
SWITCHING PARAMETERS  
Qg(10V)  
Qg(4.5V)  
Qgs  
Qgd  
tD(on)  
tr  
Total Gate Charge  
Total Gate Charge  
Gate Source Charge  
Gate Drain Charge  
Turn-On DelayTime  
Turn-On Rise Time  
Turn-Off DelayTime  
Turn-Off Fall Time  
18  
9.5  
5.5  
3.3  
8.7  
8.5  
18  
7
24  
nC  
V
GS=-10V, VDS=-15V, ID=-10A  
nC  
nC  
ns  
ns  
ns  
ns  
VGS=-10V, VDS=-15V, RL=1.5Ω,  
RGEN=3Ω  
tD(off)  
tf  
trr  
IF=-10A, dI/dt=100A/µs  
IF=-10A, dI/dt=100A/µs  
25  
12  
30  
Body Diode Reverse Recovery Time  
Body Diode Reverse Recovery Charge  
ns  
Qrr  
nC  
A: The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A = 25°C.  
The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal  
resistance rating.  
B: Repetitive rating, pulse width limited by junction temperature.  
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.  
D. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.  
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The  
SOA curve provides a single pulse rating.  
F. The current rating is based on the t ≤ 10s thermal resistance rating.  
G. EAR and IAR ratings are based on low frequency and duty cycles to keep Tj=25C.  
Rev7: Nov. 2010  
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL  
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING  
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,  
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.  
Alpha & Omega Semiconductor, Ltd.  
www.aosmd.com  
AO4435  
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS  
80  
60  
40  
20  
0
80  
60  
40  
20  
0
VDS= -5V  
-10V  
-8V  
-6V  
-4.5V  
VGS= -4V  
125°C  
25°C  
5
0
1
2
3
4
5
0
1
2
3
4
6
-VDS (Volts)  
-VGS(Volts)  
Figure 1: On-Region Characteristics  
Figure 2: Transfer Characteristics  
40  
35  
30  
25  
20  
15  
10  
5
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
VGS=-10V  
ID=-10A  
VGS=-5V  
VGS=-20V  
ID=-11A  
VGS=-5V  
ID=-5A  
VGS=-10V  
VGS=-20V  
0
5
10  
15  
20  
0
25  
50  
75  
100  
125  
150  
175  
-ID (A)  
Temperature (°C)  
Figure 3: On-Resistance vs. Drain Current and  
Gate Voltage  
Figure 4: On-Resistance vs. Junction  
Temperature  
55  
1E+01  
1E+00  
1E-01  
1E-02  
1E-03  
1E-04  
1E-05  
1E-06  
ID=-11A  
45  
35  
25  
15  
5
125°C  
25°C  
125°C  
25°C  
0.0  
0.2  
0.4  
-VSD (Volts)  
Figure 6: Body-Diode Characteristics  
0.6  
0.8  
1.0  
2
4
6
8
10  
-VGS (Volts)  
Figure 5: On-Resistance vs. Gate-Source Voltage  
12  
14  
16  
18  
20  
Alpha & Omega Semiconductor, Ltd.  
www.aosmd.com  
AO4435  
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS  
2000  
10  
8
VDS=-15V  
ID=-10A  
Ciss  
1500  
1000  
500  
0
6
4
Coss  
2
Crss  
0
0
5
10  
Qg (nC)  
Figure 7: Gate-Charge Characteristics  
15  
20  
0
5
10  
15  
20  
25  
30  
-VDS (Volts)  
Figure 8: Capacitance Characteristics  
1000  
100  
10  
1000  
100  
10  
TJ(Max)=150°C  
TA=25°C  
RDS(ON) limited  
10µs  
100µs  
1ms  
10ms  
1
100ms  
TJ(Max)=150°C  
TA=25°C  
0.1  
0.01  
10s  
DC  
1
0.00001  
0.001  
0.1  
10  
1000  
0.1  
1
10  
100  
-VDS (Volts)  
Pulse Width (s)  
Figure 10: Single Pulse Power Rating Junction-  
to-Ambient (Note E)  
Figure 9: Maximum Forward Biased Safe  
Operating Area (Note E)  
10  
1
D=Ton/T  
In descending order  
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse  
TJ,PK=TA+PDM.ZθJA.RθJA  
RθJA=75°C/W  
0.1  
PD  
0.01  
Ton  
T
Single Pulse  
0.001  
0.001  
0.00001  
0.0001  
0.01  
0.1  
1
10  
100  
1000  
Pulse Width (s)  
Figure 11: Normalized Maximum Transient Thermal Impedance(Note E)  
Alpha & Omega Semiconductor, Ltd.  
www.aosmd.com  
AO4435  
Gate Charge Test Circuit & Waveform  
Vgs  
Qg  
-
-10V  
-
VDC  
Qgs  
Qgd  
+
Vds  
VDC  
+
DUT  
Vgs  
Ig  
Resistive Switching Test Circuit & Waveforms  
RL  
Vds  
toff  
ton  
t
td(off)  
td(on)  
t
r
f
Vgs  
-
90%  
DUT  
Vdd  
Vgs  
VDC  
+
Rg  
Vgs  
10%  
Vds  
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms  
EAR= 1/2 LIA2R  
L
Vds  
Id  
Vgs  
Vds  
-
BVDSS  
Vgs  
Vdd  
VDC  
+
Id  
Rg  
I AR  
DUT  
Vgs  
Vgs  
Diode Recovery Test Circuit & Waveforms  
Q rr = - Idt  
Vds +  
Vds -  
Ig  
DUT  
Vgs  
trr  
L
-Isd  
-IF  
Isd  
Vgs  
dI/dt  
-IRM  
+
Vdd  
VDC  
Vdd  
-
-Vds  
Alpha & Omega Semiconductor, Ltd.  
www.aosmd.com  

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