AO4435 [AOS]
P-Channel Enhancement Mode Field Effect Transistor; P沟道增强型场效应晶体管
| 型号： | AO4435 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | P-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总4页 (文件大小：170K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO4435
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO4435 uses advanced trench technology to
provide excellent RDS(ON), and ultra-low low gate charge
with a 25V gate rating. This device is suitable for use as
a load switch or in PWM applications. Standard Product
AO4435 is Pb-free (meets ROHS & Sony 259
specifications).
VDS = -30V
ID = -10A
(VGS = -10V)
R
R
DS(ON) < 18mΩ (VGS = -10V)
DS(ON) < 36mΩ (VGS = -5V)
SOIC-8
Top View
D
S
S
S
S
G
D
D
D
D
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
10 Sec
Steady State
-30
Units
Drain-Source Voltage
V
VGS
Gate-Source Voltage
Continuous Drain
Current A
±25
V
A
TA=25°C
TA=70°C
-10
-8
-8
-6
ID
Pulsed Drain Current B
IDM
-80
TA=25°C
TA=70°C
3.1
2.0
1.7
1.1
Power Dissipation A
PD
W
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Symbol
Typ
32
Max
40
Units
°C/W
°C/W
°C/W
t ≤ 10s
RθJA
Steady State
Steady State
60
75
RθJL
17
24
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4435
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID = -250µA, VGS = 0V
-30
V
V
DS = -30V, VGS = 0V
-1
IDSS
Zero Gate Voltage Drain Current
µA
-5
TJ = 55°C
TJ=125°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS = 0V, VGS = ±25V
VDS = VGS ID = -250µA
VGS = -10V, VDS = -5V
VGS = -10V, ID = -10A
±100
-3
nA
V
VGS(th)
ID(ON)
-1.7
-80
-2.3
A
15
22
18
27
36
RDS(ON)
Static Drain-Source On-Resistance
mΩ
V
V
GS = -5V, ID = -5A
DS = -5V, ID = -10A
27
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
22
S
V
A
IS = -1A,VGS = 0V
-0.74
-1
Maximum Body-Diode Continuous Current
-3.5
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1130 1400
pF
pF
pF
Ω
VGS=0V, VDS=-15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
240
155
VGS=0V, VDS=0V, f=1MHz
5.8
8
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
18
9.5
5.5
3.3
8.7
8.5
18
7
24
nC
VGS=-10V, VDS=-15V, ID=-10A
nC
nC
ns
ns
ns
ns
VGS=-10V, VDS=-15V, RL=1.5Ω,
R
GEN=3Ω
tD(off)
tf
trr
IF=-10A, dI/dt=100A/µs
IF=-10A, dI/dt=100A/µs
25
12
30
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
nC
A: The value of R θJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A = 25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using < 300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t ≤ 10s thermal resistance rating.
G. EAR and IAR ratings are based on low frequency and duty cycles to keep Tj=25C.
Rev0: Aug. 2007
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4435
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
60
40
20
0
80
60
40
20
0
VDS= -5V
-10V
-8V
-6V
-4.5V
VGS= -4V
125°C
25°C
5
0
1
2
3
4
5
0
1
2
3
4
6
-VDS (Volts)
-VGS(Volts)
Figure 1: On-Region Characteristics
Figure 2: Transfer Characteristics
40
30
20
10
1.6
1.4
1.2
1.0
0.8
0.6
VGS=-10V
ID=-10A
VGS=-5V
VGS=-5V
ID=-5A
VGS=-10V
1520
0
5
10
0
25
50
75
100
125
150
175
-ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Figure 4: On-Resistance vs. Junction
Temperature
45
1E+01
1E+00
1E-01
1E-02
1E-03
ID=-10A
40
35
30
25
125°C
125°C
25°C
G
1E-04
20
1E-05
1E-06
25°C
15
10
0.0
0.2
0.4
-VSD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
3
4
5
6
7
8
9
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4435
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2000
10
8
VDS=-15V
ID=-10A
Ciss
1500
1000
500
0
6
4
Coss
2
Crss
0
0
5
10
Qg (nC)
15
20
0
5
10
15
20
25
30
-VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
1000
100
10
1000
100
10
TJ(Max)=150°C
TA=25°C
RDS(ON) limited
10µs
100µs
1ms
10ms
1
100ms
TJ(Max)=150°C
TA=25°C
0.1
0.01
10s
DC
10
1
0.1
1
100
0.00001
0.001
0.1
10
1000
-VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
Figure 10: Single Pulse Power Rating Junction-
to-Ambient (Note E)
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=75°C/W
1
0.1
PD
G
0.01
Ton
Single Pulse
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance(Note E)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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