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AO4430A [AOS]

Transistor;
AO4430A
型号： AO4430A
厂家： ALPHA & OMEGA SEMICONDUCTORS    ALPHA & OMEGA SEMICONDUCTORS
描述：

Transistor

晶体 晶体管 功率场效应晶体管 开关 脉冲 光电二极管
文件： 总5页 (文件大小：280K)
中文：  中文翻译
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AO4430  
N-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
TheꢀAO4430/Lꢀusesꢀadvancedꢀtrenchꢀtechnologyꢀtoꢀprovide  
VDSꢀ(V)ꢀ=ꢀ30V  
excellentꢀRDS(ON),ꢀshootꢁthroughꢀimmunity,ꢀbodyꢀdiode  
IDꢀ=ꢀ18Aꢀꢀ(VGSꢀ=ꢀ10V)  
characteristicsꢀandꢀꢀultraꢁlowꢀgateꢀresistance.ꢀThisꢀdeviceꢀis  
RDS(ON)ꢀ<ꢀ5.5mΩꢀ(VGSꢀ=ꢀ10V)  
RDS(ON)ꢀ<ꢀ7.5mΩꢀ(VGSꢀ=ꢀ4.5V)  
ideallyꢀsuitedꢀforꢀuseꢀasꢀaꢀlowꢀsideꢀswitchꢀinꢀNotebookꢀCPU  
coreꢀpowerꢀconversion.  
AO4430ꢀandꢀAO4430Lꢀareꢀelectricallyꢀidentical.  
ꢀꢀꢀꢀꢀꢀꢀꢀꢁRoHSꢀCompliant  
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ100% UIS Tested!  
ꢀꢀꢀꢀꢀꢀꢀꢀꢁAO4430LꢀisꢀHalogenꢀFree  
100% Rg Tested!  
SOIC-8  
D
D
G
G
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
DrainꢁSourceꢀVoltage  
VDS  
30  
V
GateꢁSourceꢀVoltage  
VGS  
±20  
V
A
TA=25°C  
TA=70°C  
18  
ContinuousꢀDrain  
CurrentꢀAF  
ID  
15  
PulsedꢀDrainꢀCurrentꢀB  
IDM  
80  
TA=25°C  
TA=70°C  
3
2.1  
PD  
W
PowerꢀDissipation  
AvalancheꢀCurrentꢀB  
IAR  
30  
A
Repetitiveꢀavalancheꢀenergyꢀ0.3mHꢀB  
EAR  
135  
mJ  
°C  
JunctionꢀandꢀStorageꢀTemperatureꢀRange  
TJ,ꢀTSTG  
ꢁ55ꢀtoꢀ150  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
31  
Max  
40  
Units  
°C/W  
°C/W  
°C/W  
MaximumꢀJunctionꢁtoꢁAmbientꢀA  
tꢀꢀ≤ꢀ10s  
RθJA  
MaximumꢀJunctionꢁtoꢁAmbientꢀA  
MaximumꢀJunctionꢁtoꢁLeadꢀC  
SteadyꢁState  
SteadyꢁState  
59  
75  
RθJL  
16  
24  
Alpha & Omega Semiconductor, Ltd.  
www.aosmd.com  
AO4430  
Electrical Characteristics (TJ=25°C unless otherwise noted)  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Units  
STATIC PARAMETERS  
ID=250µA, VGS=0V  
BVDSS  
Drain-Source Breakdown Voltage  
30  
V
VDS=30V, VGS=0V  
1
5
IDSS  
Zero Gate Voltage Drain Current  
µA  
TJ=55°C  
V
V
V
V
DS=0V, VGS= ±20V  
DS=VGS ID=250µA  
GS=4.5V, VDS=5V  
GS=10V, ID=18A  
IGSS  
Gate-Body leakage current  
Gate Threshold Voltage  
On state drain current  
100  
2.5  
nA  
V
VGS(th)  
ID(ON)  
1
1.8  
80  
A
4.7  
6.5  
6.2  
82  
5.5  
8
mΩ  
RDS(ON)  
Static Drain-Source On-Resistance  
TJ=125°C  
V
GS=4.5V, ID=15A  
7.5  
mΩ  
S
VDS=5V, ID=18A  
IS=1A,VGS=0V  
gFS  
VSD  
IS  
Forward Transconductance  
Diode Forward Voltage  
0.7  
1
V
Maximum Body-Diode Continuous Current  
4.5  
A
DYNAMIC PARAMETERS  
Ciss  
Coss  
Crss  
Rg  
Input Capacitance  
4660  
425  
240  
0.2  
6060  
638  
7270  
960  
530  
0.9  
pF  
pF  
pF  
Ω
VGS=0V, VDS=15V, f=1MHz  
Output Capacitance  
Reverse Transfer Capacitance  
Gate resistance  
355  
V
V
V
GS=0V, VDS=0V, f=1MHz  
0.45  
SWITCHING PARAMETERS  
Qg(10V) Total Gate Charge  
80  
37  
103  
48  
124  
58  
nC  
nC  
nC  
nC  
ns  
Qg(4.5V) Total Gate Charge  
GS=10V, VDS=15V, ID=18A  
Qgs  
Qgd  
tD(on)  
tr  
Gate Source Charge  
Gate Drain Charge  
Turn-On DelayTime  
Turn-On Rise Time  
Turn-Off DelayTime  
Turn-Off Fall Time  
18  
15  
12  
16  
12  
70  
14  
GS=10V, VDS=15V, RL=0.83Ω,  
8
ns  
R
GEN=3Ω  
tD(off)  
tf  
51.5  
8.8  
33.5  
22  
ns  
ns  
trr  
IF=18A, dI/dt=100A/µs  
IF=18A, dI/dt=100A/µs  
Body Diode Reverse Recovery Time  
Body Diode Reverse Recovery Charge  
44  
30  
ns  
Qrr  
nC  
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with  
A=25°C. The value in any given application depends on the user's specific board design.  
T
B: Repetitive rating, pulse width limited by junction temperature.  
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.  
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.  
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA  
curve provides a single pulse rating.  
F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.  
Rev5: Nov 2008  
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL  
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING  
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,  
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.  
Alpha & Omega Semiconductor, Ltd.  
www.aosmd.com  
AO4430  
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS  
60  
50  
40  
30  
20  
10  
0
60  
50  
40  
30  
20  
10  
0
10V  
VDS=5V  
4.5V  
3.5V  
125°C  
3.0V  
25°C  
VGS=2.5V  
2
0
1
3
4
5
1
1.5  
2
2.5  
GS(Volts)  
3
3.5  
V
DS (Volts)  
V
Fig 1: On-Region Characteristics  
Figure 2: Transfer Characteristics  
7.0  
6.5  
6.0  
5.5  
5.0  
4.5  
4.0  
3.5  
1.6  
1.4  
1.2  
1
VGS=4.5V  
ID=18A  
VGS=4.5V  
VGS=10V  
VGS=10V  
0.8  
0
20  
40  
60  
80  
100  
0
25  
50  
75  
Temperature (°C)  
Figure 4: On-Resistance vs. Junction Temperature  
100  
125  
150  
175  
I
D (A)  
Figure 3: On-Resistance vs. Drain Current and  
Gate Voltage  
16  
1.0E+02  
1.0E+01  
1.0E+00  
1.0E-01  
1.0E-02  
1.0E-03  
1.0E-04  
1.0E-05  
12  
8
ID=18A  
125°C  
25°C  
125°C  
25°C  
4
0
0.0  
0.2  
0.4  
VSD (Volts)  
Figure 6: Body-Diode Characteristics  
0.6  
0.8  
1.0  
2
4
6
8
10  
VGS (Volts)  
Figure 5: On-Resistance vs. Gate-Source Voltage  
Alpha & Omega Semiconductor, Ltd.  
www.aosmd.com  
AO4430  
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS  
8000  
10  
8
VDS=15V  
ID=18A  
Ciss  
6000  
4000  
2000  
0
6
4
2
Crss  
Coss  
0
0
20  
40  
60  
Qg (nC)  
Figure 7: Gate-Charge Characteristics  
80  
100  
120  
0
5
10  
15  
VDS (Volts)  
20  
25  
30  
Figure 8: Capacitance Characteristics  
100.0  
10.0  
1.0  
100  
RDS(ON)  
limited  
TJ(Max)=150°C  
TA=25°C  
10µs  
100µs  
80  
60  
40  
20  
0
1ms  
10ms  
0.1s  
1s  
10s  
DC  
TJ(Max)=150°C  
TA=25°C  
0.1  
0.001  
0.01  
0.1  
1
10  
100  
1000  
0.1  
1
10  
100  
Pulse Width (s)  
VDS (Volts)  
Figure 10: Single Pulse Power Rating Junction-to-  
Ambient (Note E)  
Figure 9: Maximum Forward Biased Safe  
Operating Area (Note E)  
10  
1
D=Ton/T  
In descending order  
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse  
TJ,PK=TA+PDM.ZθJA.RθJA  
R
θJA=75°C/W  
PD  
0.1  
Ton  
T
Single Pulse  
0.001  
0.01  
0.00001  
0.0001  
0.01  
0.1  
1
10  
100  
1000  
Pulse Width (s)  
Figure 11: Normalized Maximum Transient Thermal Impedance  
Alpha & Omega Semiconductor, Ltd.  
www.aosmd.com  
AO4430  
Gate Charge Test Circuit &Waveform  
Vgs  
Qg  
10V  
+
VDC  
+
Qgs  
Qgd  
Vds  
VDC  
-
-
DUT  
Vgs  
Vds  
Ig  
Charge  
Resistive Switching TestCircuit& Waveforms  
RL  
Vds  
90%  
10%  
+
DUT  
Vdd  
Vgs  
VDC  
Rg  
-
Vgs  
Vgs  
t d(on)  
t
r
t d(off)  
t
f
t on  
toff  
Unclamped Inductive Switching (UIS) Test Circuit& Waveforms  
L
2
EAR=1/2 LI  
AR  
BVDSS  
Vds  
Id  
Vds  
+
Vgs  
Vdd  
IAR  
Vgs  
VDC  
Id  
Rg  
-
DUT  
Vgs  
Vgs  
Diode RecoveryTest Circuit &Waveforms  
Qrr =- Idt  
Vds +  
Vds -  
Ig  
DUT  
Vgs  
Isd  
trr  
L
IF  
Isd  
dI/dt  
+
IRM  
Vdd  
Vgs  
VDC  
Vdd  
-
Vds  
Alpha & Omega Semiconductor, Ltd.  
www.aosmd.com  

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