AO4425L [AOS]
P-Channel Enhancement Mode Field Effect Transistor; P沟道增强型场效应晶体管
| 型号： | AO4425L |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | P-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总4页 (文件大小：111K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO4425
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO4425 uses advanced trench technology to
provide excellent RDS(ON), and ultra-low low gate
charge with a 25V gate rating. This device is suitable
for use as a load switch or in PWM applications. It is
ESD protected. Standard Product AO4425 is Pb-free
(meets ROHS & Sony 259 specifications). AO4425L
is a Green Product ordering option. AO4425 and
AO4425L are electrically identical.
VDS (V) = -38V
ID = -14A (VGS = -20V)
R
DS(ON) < 10mΩ (VGS = -20V)
DS(ON) < 11mΩ (VGS = -10V)
R
ESD Rating: 4000V HBM
SOIC-8
Top View
D
S
S
S
G
D
D
D
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
-38
V
VGS
Gate-Source Voltage
Continuous Drain
Current A
±25
-14
V
A
TA=25°C
TA=70°C
ID
-11
Pulsed Drain Current B
IDM
-50
TA=25°C
TA=70°C
3.1
PD
W
Power Dissipation A
2
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Symbol
Typ
26
Max
40
Units
°C/W
°C/W
°C/W
t ≤ 10s
RθJA
Steady-State
Steady-State
50
75
RθJL
14
24
Alpha & Omega Semiconductor, Ltd.
AO4425
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=-250µA, VGS=0V
-38
V
V
DS=-30V, VGS=0V
-100
-500
±1
IDSS
Zero Gate Voltage Drain Current
nA
TJ=55°C
µA
µA
VDS=0V, VGS=±20V
IGSS
Gate-Body leakage current
VDS=0V, VGS=±25V
±10
-3.5
VGS(th)
ID(ON)
Gate Threshold Voltage
On state drain current
VDS=VGS ID=-250µA
VGS=-10V, VDS=-5V
VGS=-20V, ID=-14A
-2
-2.5
V
A
-50
7.7
11
10
13.5
11
mΩ
mΩ
RDS(ON)
TJ=125°C
Static Drain-Source On-Resistance
VGS=-10V, ID=-14A
8.8
43
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
VDS=-5V, ID=-14A
IS=-1A,VGS=0V
S
V
A
0.71
1
Maximum Body-Diode Continuous Current
4.2
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
3800
560
350
7.5
pF
pF
pF
Ω
V
GS=0V, VDS=-20V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
V
GS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
63
14.1
16.1
12.4
9.2
nC
nC
nC
ns
ns
ns
ns
V
GS=-10V, VDS=-20V, ID=-14A
VGS=-10V, VDS=-20V, RL=1.35Ω,
RGEN=3Ω
tD(off)
tf
97.5
45.5
35
trr
IF=-14A, dI/dt=100A/µs
IF=-14A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
nC
Qrr
33
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev 1 : July 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4425
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
30
25
20
15
10
5
VDS=-5V
-20V
-10V
-5V
-4.5V
25
20
15
10
5
-4V
125°C
-3.5V
25°C
VGS=-3V
4
0
0
0
1
2
3
5
2
2.5
3
3.5
-VGS(Volts)
4
4.5
5
-VDS (Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
10
9
1.6
1.4
1.2
1
VGS=-10V
ID = -14A
VGS=-10V
VGS=-20V
ID = -14A
8
VGS=-20V
7
6
0.8
0
5
10
15
20
25
30
0
25
50
75
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
100
125
150
175
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
1.0E+01
20
ID=-14A
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
15
10
5
125°C
125°C
25°C
25°C
0.0
0.2
0.4
-VSD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
4
8
12
16
20
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AO4425
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5000
10
8
VDS=-15V
ID=-14A
Ciss
4000
3000
2000
1000
0
6
4
Coss
2
Crss
0
0
10
20
30
40
50
60
70
0
10
20
30
40
-Qg (nC)
-VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
40
30
20
10
0
10µs
TJ(Max)=150°C
TA=25°C
RDS(ON)
limited
100µs
1ms
10.0
1.0
10ms
0.1s
1s
TJ(Max)=150°C
TA=25°C
10s
DC
0.1
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
Pulse Width (s)
-VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
1
In descending order
D=Ton/T
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=40°C/W
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
Pulse Width (s)
1
10
100
1000
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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