AO4427 [FREESCALE]
30V P-Channel MOSFET; 30V P沟道MOSFET
| 型号： | AO4427 |
| 厂家： | 
Freescale |
| 描述： | 30V P-Channel MOSFET |
| 文件： | 总4页 (文件大小：350K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO4427
30V P-Channel MOSFET
General Description
The AO4427 uses advanced trench technology to
charge with a 25V gate rating. This device is suitable
device is ESD protected
provide excellent RDS(ON), and ultra-low low gate
for use as a load switch or in PWM applications. The
Features
VDS (V) = -30V
ID = -12.5 A (VGS = -20V)
R
DS(ON) < 12mΩ (VGS = -20V)
.
RDS(ON) < 14mΩ (VGS = -10V)
ESD Rating: 2KV HBM
SOIC-8
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
VDS
-30
V
Gate-Source Voltage
VGS
±25
-12.5
-10.5
-60
V
A
TA=25°C
TA=70°C
Continuous Drain
Current AF
Pulsed Drain Current B
ID
IDM
TA=25°C
TA=70°C
3
PD
W
°C
Power Dissipation A
2.1
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
28
Max
40
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient AF
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Steady-State
Steady-State
54
75
RθJL
21
30
1/4
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AO4427
30V P-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
ID=-250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
-30
V
V
DS=-30V, VGS=0V
-1
-5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
VDS=0V, VGS=±25V
VDS=VGS ID=-250µA
VGS=-10V, VDS=-5V
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±10
-3
µA
V
VGS(th)
ID(ON)
-1.7
-60
-2.5
A
V
GS=-20V, ID=-12.5A
9.4
12.2
11.5
32
12
15
14
mΩ
TJ=125°C
RDS(ON)
Static Drain-Source On-Resistance
VGS=-10V, ID=-10A
VGS=-4.5V, ID=-5A
VDS=-5V, ID=-12.5A
IS=-1A,VGS=0V
mΩ
mΩ
S
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
24
-1
V
Maximum Body-Diode Continuous Current
-4.2
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
2330
480
320
6.8
2900
pF
pF
pF
Ω
V
GS=0V, VDS=-15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
448
10
VGS=0V, VDS=0V, f=1MHz
3.4
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
41
10
52
nC
nC
nC
ns
ns
ns
ns
VGS=-10V, VDS=-15V,
ID=-12.5A
12
12.8
10.3
49.5
29
V
GS=-10V, VDS=-15V, RL=1.2Ω,
GEN=3Ω
R
tD(off)
tf
trr
IF=-12.5A, dI/dt=100A/µs
IF=-12.5A, dI/dt=100A/µs
28
35
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
20
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
T A=25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
SOA curve provides a single pulse rating.
F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
Rev8: Nov. 2010
2/4
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AO4427
30V P-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
20
15
10
5
30
-6V
VDS=-5V
-10V
-5V
20
10
-4.5V
125°C
VGS=-4V
25°C
4.5
0
0
0
1
2
3
4
5
1
1.5
2
2.5
3
3.5
4
5
-VDS (Volts)
-VGS(Volts)
Figure 1: On-Region Characteristics
Figure 2: Transfer Characteristics
12
11
10
9
1.6
1.4
1.2
1
VGS=-10V
ID=-10A
VGS=-10V
VGS=-20V
ID=-12.5A
VGS=-20V
8
0
0.8
5
10
15
20
25
0
25
50
75
100
125
150
175
-ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Figure 4: On-Resistance vs. Junction
Temperature
50
40
1.0E+01
1.0E+00
1.0E-01
ID=-12.5A
125°C
30
1.0E-02
G
125°C
1.0E-03
1.0E-04
1.0E-05
1.0E-06
20
25°C
10
0
25°C
4
5
6
7
8
9
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VGS (Volts)
-VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Figure 6: Body-Diode Characteristics
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AO4427
30V P-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3000
2500
2000
1500
1000
500
10
8
VDS=-15V
ID=-12.5A
Ciss
6
Coss
4
Crss
2
0
0
0
5
10
15
20
-Qg (nC)
Figure 7: Gate-Charge Characteristics
25
30
35
40
45
0
5
10
15
-VDS (Volts)
20
25
30
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
40
30
20
10
0
TJ(Max)=150°C
TA=25°C
RDS(ON)
limited
10µs
100µs
1ms
10ms
0.1s
1s
10s
TJ(Max)=150°C
TA=25°C
DC
0.1
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=40°C/W
NG
PD
0.1
Ton
T
Single Pulse
0.001 0.01
0.01
0.00001
0.0001
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
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