AO4427_10 [AOS]
30V P-Channel MOSFET; 30V P沟道MOSFET
| 型号： | AO4427_10 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 30V P-Channel MOSFET |
| 文件： | 总4页 (文件大小：174K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO4427
30V P-Channel MOSFET
General Description
Product Summary
The AO4427 uses advanced trench technology to
provide excellent RDS(ON), and ultra-low low gate
charge with a 25V gate rating. This device is suitable
for use as a load switch or in PWM applications. The
device is ESD protected.
VDS (V) = -30V
ID = -12.5 A (VGS = -20V)
RDS(ON) < 12mΩ (VGS = -20V)
R
DS(ON) < 14mΩ (VGS = -10V)
ESD Rating: 2KV HBM
100% UIS Tested
100% Rg Tested
SOIC-8
D
S
Top View
Bottom View
D
D
D
D
G
G
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
VDS
-30
V
Gate-Source Voltage
VGS
±25
-12.5
-10.5
-60
V
A
TA=25°C
TA=70°C
Continuous Drain
Current AF
Pulsed Drain Current B
ID
IDM
TA=25°C
TA=70°C
3
PD
W
°C
Power Dissipation A
2.1
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
28
Max
40
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient AF
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Steady-State
Steady-State
54
75
RθJL
21
30
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4427
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
ID=-250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
-30
V
V
DS=-30V, VGS=0V
-1
-5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
VDS=0V, VGS=±25V
VDS=VGS ID=-250µA
VGS=-10V, VDS=-5V
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±10
-3
µA
V
VGS(th)
ID(ON)
-1.7
-60
-2.5
A
V
GS=-20V, ID=-12.5A
9.4
12.2
11.5
32
12
15
14
mΩ
TJ=125°C
RDS(ON)
Static Drain-Source On-Resistance
VGS=-10V, ID=-10A
VGS=-4.5V, ID=-5A
VDS=-5V, ID=-12.5A
IS=-1A,VGS=0V
mΩ
mΩ
S
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
24
-1
V
Maximum Body-Diode Continuous Current
-4.2
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
2330
480
320
6.8
2900
pF
pF
pF
Ω
V
GS=0V, VDS=-15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
448
10
VGS=0V, VDS=0V, f=1MHz
3.4
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
41
10
52
nC
nC
nC
ns
ns
ns
ns
VGS=-10V, VDS=-15V,
ID=-12.5A
12
12.8
10.3
49.5
29
V
GS=-10V, VDS=-15V, RL=1.2Ω,
GEN=3Ω
R
tD(off)
tf
trr
IF=-12.5A, dI/dt=100A/µs
IF=-12.5A, dI/dt=100A/µs
28
35
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
20
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
T A=25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
SOA curve provides a single pulse rating.
F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
Rev8: Nov. 2010
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4427
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
20
15
10
5
30
-6V
VDS=-5V
-10V
-5V
20
10
-4.5V
125°C
VGS=-4V
25°C
4.5
0
0
0
1
2
3
4
5
1
1.5
2
2.5
3
3.5
4
5
-VDS (Volts)
-VGS(Volts)
Figure 1: On-Region Characteristics
Figure 2: Transfer Characteristics
12
11
10
9
1.6
1.4
1.2
1
VGS=-10V
ID=-10A
VGS=-10V
VGS=-20V
ID=-12.5A
VGS=-20V
8
0
0.8
5
10
15
20
25
0
25
50
75
100
125
150
175
-ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Figure 4: On-Resistance vs. Junction
Temperature
50
40
1.0E+01
1.0E+00
1.0E-01
ID=-12.5A
125°C
30
1.0E-02
G
125°C
1.0E-03
1.0E-04
1.0E-05
1.0E-06
20
25°C
10
0
25°C
4
5
6
7
8
9
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VGS (Volts)
-VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4427
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3000
2500
2000
1500
1000
500
10
8
VDS=-15V
ID=-12.5A
Ciss
6
Coss
4
Crss
2
0
0
0
5
10
15
20
-Qg (nC)
Figure 7: Gate-Charge Characteristics
25
30
35
40
45
0
5
10
15
-VDS (Volts)
20
25
30
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
40
30
20
10
0
TJ(Max)=150°C
TA=25°C
RDS(ON)
limited
10µs
100µs
1ms
10ms
0.1s
1s
10s
TJ(Max)=150°C
TA=25°C
DC
0.1
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=40°C/W
NG
PD
0.1
Ton
T
Single Pulse
0.001 0.01
0.01
0.00001
0.0001
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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